يعرض 1 - 5 نتائج من 5 نتيجة بحث عن '"Chu-Hsin Liang"', وقت الاستعلام: 0.97s تنقيح النتائج
  1. 1
    مؤتمر
    Characterization and analysis of gate-induced-drain-leakage current in 45 nm CMOS technology

    المؤلفون: Xiaobin Yuan, Jae-Eun Park, Jing Wang, Enhai Zhao, Ahlgren, David, Hook, Terence, Jun Yuan, Chan, Victor, Huiling Shang, Chu-Hsin Liang, Lindsay, Richard, Sungjoon Park, Hyotae Choo

    المصدر: 2007 IEEE International Integrated Reliability Workshop Final Report Integrated Reliability Workshop Final Report, 2007. IRW 2007. IEEE International. :70-73 Oct, 2007

    Relation: 2007 IEEE International Integrated Reliability Workshop Final Report

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  2. 2
    Gate-Induced-Drain-Leakage Current in 45-nm CMOS Technology

    المؤلفون: David C. Ahlgren, Chu-Hsin Liang, Hyotae Choo, Victor Chan, Jun Yuan, Jae-Eun Park, Enhai Zhao, Xiaobin Yuan, R. Lindsay, Huiling Shang, Jing Wang, Terence B. Hook, Sung-Joon Park

    المصدر: IEEE Transactions on Device and Materials Reliability. 8:501-508

    مصطلحات موضوعية: Materials science, business.industry, Electrical engineering, Electron, Electronic, Optical and Magnetic Materials, CMOS, Electric field, MOSFET, Node (physics), Optoelectronics, Electrical and Electronic Engineering, Current (fluid), Safety, Risk, Reliability and Quality, business, Quantum tunnelling, Voltage

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::f341c6381cfab32417c8d74655f50c01
    https://doi.org/10.1109/tdmr.2008.2002350

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  3. 3
    Gate-Induced-Drain Leakage Current in 45 nm CMOS Technology

    المؤلفون: Xiaobin Yuan, Jae-Eun Park, Jin Wang, Enhai Zhao, David Ahlgren, Terence Hook, Jun Yuan, Victor Chan, Huiling Shang, Chu-Hsin Liang, Richard Lindsay, Sungjoon Park, Hyotae Choo

    المصدر: IEEE Transactions on Device and Materials Reliability.

    مصطلحات موضوعية: Electrical and Electronic Engineering, Safety, Risk, Reliability and Quality, Electronic, Optical and Magnetic Materials

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::c93e4a35473e1ded630bc6cc8a7283d1
    https://doi.org/10.1109/tdmr.2008.923458

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  4. 4
    Characterization and analysis of gate-induced-drain-leakage current in 45 nm CMOS technology

    المؤلفون: Hyotae Choo, Victor Chan, Sung-Joon Park, Jun Yuan, Jing Wang, Enhai Zhao, Huiling Shang, Jae-Eun Park, Terence B. Hook, Xiaobin Yuan, David C. Ahlgren, Chu-Hsin Liang, R. Lindsay

    المصدر: 2007 IEEE International Integrated Reliability Workshop Final Report.

    مصطلحات موضوعية: Materials science, CMOS, business.industry, Node (physics), MOSFET, Doping, Analytical chemistry, Optoelectronics, Electron, Current (fluid), business, Quantum tunnelling, Voltage

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::d5d63e8775b9f35561fb0a60da2e8995
    https://doi.org/10.1109/irws.2007.4469224

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  5. 5
    دورية أكاديمية
    Gate-Induced-Drain-Leakage Current in 45-nm CMOS Technology.

    المؤلفون: Xiaobin Yuan, Jae-Eun Park, Jing Wang, Enhai Zhao, Ahlgren, D.C., Hook, T., Jun Yuan, Chan, V., Huiling Shang, Chu-Hsin Liang, Lindsay, R., Sungjoon Park, Hyotae Choo

    المصدر: IEEE Transactions on Device & Materials Reliability; Sep2008, Vol. 8 Issue 3, p501-508, 8p

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