يعرض 1 - 10 نتائج من 501 نتيجة بحث عن '"Common base"', وقت الاستعلام: 0.85s تنقيح النتائج
  1. 1
    مؤتمر
    94 GHz Two-Way-Combined Power Amplifiers with 14.2 dBm Peak Output Power in 300-nm InP/GaAsSb DHBT Technology

    المؤلفون: Hamzeloui, Sara, Arabhavi, Akshay M., Ciabattini, Filippo, Ebrahimi, Mojtaba, Bonomo, Giorgio, Ostinelli, Olivier, Bolognesi, Colombo

    المصدر: 2024 15th Global Symposium on Millimeter-Waves & Terahertz (GSMM) Millimeter-Waves & Terahertz (GSMM), 2024 15th Global Symposium on. :237-239 May, 2024

    Relation: 2024 15th Global Symposium on Millimeter-Waves & Terahertz (GSMM)

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  2. 2
    مؤتمر
    Area-Efficient and Wideband Input Stages for SiGe BiCMOS G-Band LNAs

    المؤلفون: Urain, Alvaro, Rio, David Del, Berenguer, Roc

    المصدر: 2023 18th Conference on Ph.D Research in Microelectronics and Electronics (PRIME) Ph.D Research in Microelectronics and Electronics (PRIME), 2023 18th Conference on. :17-20 Jun, 2023

    Relation: 2023 18th Conference on Ph.D Research in Microelectronics and Electronics (PRIME)

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  3. 3
    مؤتمر
    Microstrip and Grounded CPW Calibration Kit Comparison for On-Wafer Transistor Characterization from 220 GHz to 325 GHz

    المؤلفون: Jones, Rob D., Cheron, Jerome, Bosworth, Bryan T., Jamroz, Benjamin F., Williams, Dylan F., Urteaga, Miguel E., Feldman, Ari D., Aaen, Peter H.

    المصدر: 2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2023 IEEE. :124-127 Oct, 2023

    Relation: 2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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  4. 4
    مؤتمر
    A Shunt-Feedback TIA with Common-Base Variable Gain Input Stage for 128-GBaud Coherent Communication

    المؤلفون: Kumagai, Seiji, Sugimoto, Yoshiyuki, Uemura, Hiroshi, Kurokawa, Munetaka, Itabashi, Naoki, Takechi, Masaru, Okimoto, Takuya, Tanaka, Keiji

    المصدر: 2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2023 IEEE. :163-166 Oct, 2023

    Relation: 2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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  5. 5
    مؤتمر
    Multi-Finger 250-nm InP/GaAsSb DHBTs with Record 37.3 % Class-A PAE at 94 GHz

    المؤلفون: Hamzeloui, Sara, Arabhavi, Akshay M., Ciabattini, Filippo, Ebrahimi, Mojtaba, Muller, Markus, Ostinelli, Olivier, Schroter, Michael, Bolognesi, Colombo R.

    المصدر: 2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2023 IEEE. :145-148 Oct, 2023

    Relation: 2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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  6. 6
    مؤتمر
    A 30-88 GHz Phase Shifter with Broadband 90° Hybrid- Marchand Balun Network and Common-base Buffer Achieving 1.34-3.1° RMS Phase Error in 90 nm SiGe

    المؤلفون: Liu, Zheng, Karahan, Emir Ali, Sengupta, Kaushik

    المصدر: 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023 Microwave Symposium - IMS 2023, 2023 IEEE/MTT-S International. :1156-1159 Jun, 2023

    Relation: 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023

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  7. 7
    دورية أكاديمية
    A 330-GHz Wide Tuning Range VCO Based on Common-Base Cross-Coupled Topology in SiGe BiCMOS Technology

    المؤلفون: Zhang, R., Chen, Z., Wang, Z., Chen, J., Hong, W.

    المصدر: IEEE Microwave and Wireless Technology Letters IEEE Microw. Wireless Tech. Lett. Microwave and Wireless Technology Letters, IEEE. 33(10):1462-1465 Oct, 2023

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  8. 8
    دورية أكاديمية
    A Wideband Digital-Intensive Current-Mode Transmitter Line-Up

    المؤلفون: Shen, Y., Hoogelander, M., Bootsman, R., Alavi, M.S., de Vreede, L.C.N.

    المصدر: IEEE Journal of Solid-State Circuits IEEE J. Solid-State Circuits Solid-State Circuits, IEEE Journal of. 58(9):2489-2500 Sep, 2023

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  9. 9
    مؤتمر
    A Novel SiC MOSFET Crosstalk Clamp Circuit Based on BJT Common -Base and Common- Collector

    المؤلفون: Zhong, Minghao, Li, Hao, Liu, Li, Li, Gangpeng

    المصدر: 2022 5th International Conference on Power and Energy Applications (ICPEA) Power and Energy Applications (ICPEA), 2022 5th International Conference on. :592-598 Nov, 2022

    Relation: 2022 5th International Conference on Power and Energy Applications (ICPEA)

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  10. 10
    مؤتمر
    Highly-Linear InP/GaAsSb DHBTs with 18.2 dBm OIP3 at 45 GHz: Comparison of Common-Base and Common-Emitter Structures

    المؤلفون: Hamzeloui, S., Ciabattini, F., Arabhavi, A. M., Quan, W., Marti, D., Ebrahimi, M., Ostinelli, O., Bolognesi, C. R.

    المصدر: 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2022 IEEE. :108-111 Oct, 2022

    Relation: 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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