المؤلفون: Syshchyk, Olga, Cosnier, Thibault, Huang, Zheng-Hong, Cingu, Deepthi, Wellekens, Dirk, Vohra, Anurag, Geens, Karen, Vudumula, Pavan, Chatterjee, Urmimala, Decoutere, Stefaan, Wu, Tian-Li, Bakeroot, Benoit

المصدر: ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC) Solid-State Device Research Conference (ESSDERC), ESSDERC 2022 - IEEE 52nd European. :245-248 Sep, 2022

Relation: ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC)

المؤلفون: Bettini, Andrea, Cosnier, Thibault, Magnani, Alessandro, Syshchyk, Olga, Borga, Matteo, Decoutere, Stefaan, Neviani, Andrea

المصدر: 2022 17th Conference on Ph.D Research in Microelectronics and Electronics (PRIME) Ph.D Research in Microelectronics and Electronics (PRIME), 2022 17th Conference on. :273-276 Jun, 2022

Relation: 2022 17th Conference on Ph.D Research in Microelectronics and Electronics (PRIME)

المؤلفون: Magnani, Alessandro, Cosnier, Thibault, Amirifar, Nooshin, Zhao, Ming, Li, Xiangdong, Geens, Karen, Decoutere, Stefaan

المصدر: 2020 21st International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2020 21st International Conference on. :1-6 Jul, 2020

Relation: 2020 21st International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)

المؤلفون: Chatterjee, Urmimala, Pauw, Herbert De, Syshchyk, Olga, Cosnier, Thibault, Vohra, Anurag, Decoutere, Stefaan

المصدر: In Solid State Electronics September 2023 207

المؤلفون: Vudumula, Pavan, Cosnier, Thibault, Syshchyk, Olga, Bakeroot, Benoit, Decoutere, Stefaan

المصدر: In Solid State Electronics February 2023 200

المؤلفون: Magnani, Alessandro, Cosnier, Thibault, Amirifar, Nooshin, Chatterjee, Urmimala, Zhao, Ming, Li, Xiangdong, Geens, Karen, Decoutere, Stefaan

المصدر: In Microelectronics Reliability March 2021 118

المؤلفون: Marco G. Pala, L. Lucci, A. Torres, T. Cosnier

المساهمون: Cosnier, Thibault, Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), C2N, CNRS - Université Paris-Sud, Université Paris-Saclay

المصدر: HAL
2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2017, Kamakura, Japan

مصطلحات موضوعية: Materials science, Passivation, TCAD modelling, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Power transistors modeling and design, 02 engineering and technology, 01 natural sciences, law.invention, Stress (mechanics), law, 0103 physical sciences, Power semiconductor device, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Threshold Voltage, Deposition (law), p-GaN gate HEMT, 010302 applied physics, Stress engineering, business.industry, Transistor, [SPI.NRJ]Engineering Sciences [physics]/Electric power, Electrical engineering, TCAD simulation, 021001 nanoscience & nanotechnology, [INFO.INFO-MO]Computer Science [cs]/Modeling and Simulation, Threshold voltage, HEMT - High Electronic Mobility Transistor, Optoelectronics, Passivation layer, HEMT - power switches - Gallium Nitride GaN - normally-off, [INFO.INFO-MO] Computer Science [cs]/Modeling and Simulation, 0210 nano-technology, business, Layer (electronics), [SPI.NRJ] Engineering Sciences [physics]/Electric power

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::50997f1d4a885434eabf604f4115bc2c
https://hal.archives-ouvertes.fr/hal-01643379