يعرض 1 - 10 نتائج من 18 نتيجة بحث عن '"Costa, Fernando J."', وقت الاستعلام: 1.24s تنقيح النتائج
  1. 1
    مؤتمر
    Experimental Characterization of Switching Properties of ReRAM Devices by the Capacitance Measurements

    المؤلفون: Costa, Fernando J., Zeinati, Aseel, Trevisoli, Renan, Misra, D., Doria, Rodrigo T.

    المصدر: 2023 37th Symposium on Microelectronics Technology and Devices (SBMicro) Microelectronics Technology and Devices (SBMicro), 2023 37th Symposium on. :1-4 Aug, 2023

    Relation: 2023 37th Symposium on Microelectronics Technology and Devices (SBMicro)

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  2. 2
    مؤتمر
    Experimental Analysis of HfO2/X ReRAM devices by the Capacitance Measurements

    المؤلفون: Costa, Fernando J., Zeinati, Aseel, Trevisoli, Renan, Misra, D., Doria, Rodrigo T.

    المصدر: 2023 IEEE Latin American Electron Devices Conference (LAEDC) Electron Devices Conference (LAEDC), 2023 IEEE Latin American. :1-4 Jul, 2023

    Relation: 2023 IEEE Latin American Electron Devices Conference (LAEDC)

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  3. 3
    مؤتمر
    Standard MOS Diodes Composed by SOI UTBB Transistors

    المؤلفون: Costa, Fernando J., Trevisoli, Renan, Capovilla, Carlos Eduardo, Doria, Rodrigo T.

    المصدر: 2022 36th Symposium on Microelectronics Technology (SBMICRO) Microelectronics Technology (SBMICRO), 2022 36th Symposium on. :1-4 Aug, 2022

    Relation: 2022 36th Symposium on Microelectronics Technology (SBMICRO)

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  4. 4
    مؤتمر
    Ultra-Low-Power Diodes Composed by SOI UTBB Transistors

    المؤلفون: Costa, Fernando J., Trevisoli, Renan, Doria, Rodrigo T.

    المصدر: 2022 IEEE Latin American Electron Devices Conference (LAEDC) Electron Devices Conference (LAEDC), 2022 IEEE Latin American. :1-4 Jul, 2022

    Relation: 2022 IEEE Latin American Electron Devices Conference (LAEDC)

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  5. 5
    مؤتمر
    SOI UTBB Capacitive Cross-Coupling Effects in Ultimate Technological Nodes

    المؤلفون: Costa, Fernando J., Trevisoli, Renan, Doria, Rodrigo T.

    المصدر: 2022 IEEE 13th Latin America Symposium on Circuits and System (LASCAS) Circuits and System (LASCAS, 2022 IEEE 13th Latin America Symposium on. :1-4 Mar, 2022

    Relation: 2022 IEEE 13th Latin America Symposium on Circuits and System (LASCAS)

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  6. 6
    مؤتمر
    Thermal Cross-Coupling Effects Analysis in UTBB Transistors

    المؤلفون: Costa, Fernando J., Trevisoli, Renan, Doria, Rodrigo T.

    المصدر: 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) Ultimate Integration on Silicon (EUROSOI-ULIS), 2020 Joint International EUROSOI Workshop and International Conference on. :1-4 Sep, 2020

    Relation: 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)

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  7. 7
    مؤتمر
    Analysis of the Thermal Properties of Self-Cascode Structures Composed by UTBB Transistors

    المؤلفون: Costa, Fernando J., Trevisoli, Renan, de Souza, Michelly, Doria, Rodrigo T.

    المصدر: 2020 IEEE Latin America Electron Devices Conference (LAEDC) Electron Devices Conference (LAEDC), 2020 IEEE Latin America. :1-4 Feb, 2020

    Relation: 2020 IEEE Latin America Electron Devices Conference (LAEDC)

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  8. 8
    مؤتمر
    Analysis of the substrate effect by the capacitive coupling in SOI UTBB Transistors

    المؤلفون: Costa, Fernando J., Trevisoli, Renan, Doria, Rodrigo T.

    المصدر: 2019 34th Symposium on Microelectronics Technology and Devices (SBMicro) Microelectronics Technology and Devices (SBMicro), 2019 34th Symposium on. :1-4 Aug, 2019

    Relation: 2019 34th Symposium on Microelectronics Technology and Devices (SBMicro)

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  9. 9
    مؤتمر
    Analysis of the substrate bias effect on the thermal properties of SOI UTBB transistors

    المؤلفون: Costa, Fernando J., Pavanello, Marcelo A., Trevisoli, Renan, Doria, Rodrigo T.

    المصدر: 2017 32nd Symposium on Microelectronics Technology and Devices (SBMicro) Microelectronics Technology and Devices (SBMicro), 2017 32nd Symposium on. :1-4 Aug, 2017

    Relation: 2017 32nd Symposium on Microelectronics Technology and Devices (SBMicro)

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  10. 10
    دورية أكاديمية
    Influence of interface traps density and temperature variation on the NBTI effect in p-Type junctionless nanowire transistors

    المؤلفون: Graziano, Nilton, Junior, Costa, Fernando J., Trevisoli, Renan, Barraud, Sylvain, Doria, Rodrigo T.

    المصدر: In Solid State Electronics December 2021 186

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