يعرض 1 - 10 نتائج من 23 نتيجة بحث عن '"Courant, J.-L."', وقت الاستعلام: 1.15s تنقيح النتائج
  1. 1
    مؤتمر
    France Telecom's PON deployment, learnt lessons and next steps

    المؤلفون: Chanclou, P., Capelle, B., Charbonnier, B., Courant, J.-L., Denis, Y., Genay, N., Gosselin, S., Kurz, D., Landousies, B., Le Bris, E., Le Guyader, B., Pizzinat, A., Saliou, F.

    المصدر: 2013 Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference (OFC/NFOEC) Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference (OFC/NFOEC), 2013. :1-3 Mar, 2013

    Relation: 2013 OFC Collocated National Fiber Optic Engineers Conference OFC/NFOEC 2013

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  2. 2
    دورية أكاديمية
    Model-Based Probabilistic Reasoning for Self-Diagnosis of Telecommunication Networks: Application to a GPON-FTTH Access Network

    المؤلفون: Tembo, S. R., Vaton, S., Courant, J. L., Gosselin, S., Beuvelot, M.

    المصدر: Journal of Network and Systems Management. July 2017 25(3):558-590

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  3. 3
    دورية أكاديمية
    Low Energy, High Density Plasma (ICP) for Low Defect Etching and Deposition Applications on Compound Semiconductors

    المؤلفون: Etrillard, J.Aff122, Maher, H., Medjdoub, M., Courant, J. L., Nissim, Y. I.

    المصدر: MRS Online Proceedings Library. 573(1):189-201

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  4. 4
    مؤتمر
    Dynamics of 3D representation of interfaces in UV-induced chemical vapor deposition: experiments, modeling, and simulation for silicon nitride thin layers.

    المؤلفون: Flicstein, Jean, Guillonneau, E., Marquez, Jose, How Kee Chun, L. S., Maisonneuve, D., David, C., Wang, Zh. Z., Palmier, Jean F., Courant, J. L.

    المصدر: Proceedings of SPIE; Nov2001, Issue 1, p28-35, 8p

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  5. 5
    مؤتمر
    Modeling and Monte Carlo simulation of nucleation and growth of UV/low-temperature-induced nanostructures.

    المؤلفون: Flicstein, Jean, Pata, S., Chun, L. S. H. K., Palmier, Jean F., Courant, J. L.

    المصدر: Proceedings of SPIE; Nov1998, Issue 1, p165-172, 8p

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  6. 6
    دورية أكاديمية
    Electrical properties of metal-insulator-semiconductor structures with silicon nitride dielectrics deposited by low temperature plasma enhanced chemical vapor deposition distributed electron cyclotron resonance.

    المؤلفون: Hugon, M. C., Delmotte, F., Agius, B., Courant, J. L.

    المصدر: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; 1997, Vol. 15 Issue 6, p3143-3153, 11p

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  7. 7
    دورية أكاديمية
    Low temperature deposition of silicon nitride films by distributed electron cyclotron resonance plasma-enhanced chemical vapor deposition.

    المؤلفون: Sitbon, S., Hugon, M. C., Agius, B., Abel, F., Courant, J. L., Puech, M.

    المصدر: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; 1995, Vol. 13 Issue 6, p2900-2907, 8p

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  8. 8
    دورية أكاديمية
    Low temperature deposition of SiNx:H using SiH4-N2 or SiH4-NH3 distributed electron cyclotron resonance microwave plasma.

    المؤلفون: Delmotte, F., Hugon, M. C., Agius, B., Courant, J. L.

    المصدر: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1997, Vol. 15 Issue 6, p1919-1926, 8p

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  9. 9
    دورية
    Inductively coupled plasma - plasma enhanced chemical vapor deposition silicon nitride for passivation of InP based high electron mobility transistors (HEMTs)

    المؤلفون: Medjdoub, M., Courant, J. L., Maher, H., Post, G.

    المصدر: Materials Science and Engineering B: Solid-State Materials for Advanced Technology; 2001, Vol. 80 Issue: 1 p252-256, 5p

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  10. 10
    دورية
    Atomistic comparative study of VUV photodeposited silicon nitride on InP(100) by simulation and atomic force microscopy

    المؤلفون: Flicstein, J., Guillonneau, E., Marquez, J., Chun, L. S. How Kee, Maisonneuve, D., David, C., Wang, Z., Palmier, J. F., Courant, J. L.

    المصدر: Applied Surface Science; 2000, Vol. 154 Issue: 1 p337-344, 8p

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