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1
المؤلفون: D. Goghero, Georges Bremond, D. Mariolle, Brice Gautier, A. Descamps, M. Faucher, F. Bertin
المصدر: Solid-State Electronics. 50:1479-1482
مصطلحات موضوعية: Materials science, Silicon, business.industry, Scanning electron microscope, Doping, Analytical chemistry, chemistry.chemical_element, Scanning capacitance microscopy, Condensed Matter Physics, Capacitance, Signal, Electronic, Optical and Magnetic Materials, Condensed Matter::Materials Science, chemistry, Condensed Matter::Superconductivity, Monolayer, Materials Chemistry, Optoelectronics, Electrical and Electronic Engineering, business, Image resolution
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2
المؤلفون: D. Goghero, Antoine Goullet, J.P. Landesman
المصدر: Solid-State Electronics. 49:369-376
مصطلحات موضوعية: Silicon, Silicon dioxide, Analytical chemistry, Oxide, chemistry.chemical_element, Conductance, Condensed Matter Physics, Isotropic etching, Oxygen, Electronic, Optical and Magnetic Materials, chemistry.chemical_compound, Helicon, chemistry, Ellipsometry, Materials Chemistry, Electrical and Electronic Engineering
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3
المؤلفون: G. Borvon, Guy Turban, D. Goghero, Antoine Goullet
المصدر: Thin Solid Films. 471:123-127
مصطلحات موضوعية: Silicon, Silicon dioxide, Metals and Alloys, Analytical chemistry, chemistry.chemical_element, Surfaces and Interfaces, Substrate (electronics), Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, chemistry.chemical_compound, Helicon, chemistry, Etching (microfabrication), Materials Chemistry, Electrical measurements, Thin film, Silicon oxide
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4
المؤلفون: Filippo Giannazzo, D. Goghero, Paolo Musumeci, Lucia Calcagno, Vito Raineri
المصدر: EPJ. Applied physics
27 (2004): 239–242. doi:10.1051/epjap:2004112
info:cnr-pdr/source/autori:Goghero, D; Giannazzo, F; Raineri, V; Musumeci, P; Calcagno, L/titolo:Structural and electrical characterization of n(+)-type ion-implanted 6H-SiC/doi:10.1051%2Fepjap:2004112/rivista:EPJ. Applied physics (Print)/anno:2004/pagina_da:239/pagina_a:242/intervallo_pagine:239–242/volume:27مصطلحات موضوعية: Annealing (metallurgy), Chemistry, Doping, Analytical chemistry, Wide-bandgap semiconductor, Scanning capacitance microscopy, Condensed Matter Physics, Microstructure, Electronic, Optical and Magnetic Materials, Ion, Ion implantation, Transmission electron microscopy, SILICON-CARBIDE, Instrumentation
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d192477da2bb0f9d2b55a072949b94ca
https://doi.org/10.1051/epjap:2004112 -
5
المؤلفون: F. Musumeci, Fabrizio Roccaforte, Lucia Calcagno, Vito Raineri, D. Goghero, Filippo Giannazzo, Francesco La Via
المصدر: Materials Science Forum. :375-378
مصطلحات موضوعية: Ion implantation, Materials science, Mechanics of Materials, business.industry, Mechanical Engineering, Optoelectronics, General Materials Science, Scanning capacitance microscopy, Dopant Activation, Condensed Matter Physics, business, Activation study
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::76d826ff35caba713702805d6e2caab1
https://doi.org/10.4028/www.scientific.net/msf.433-436.375 -
6
المؤلفون: Filippo Giannazzo, D. Goghero, Salvo Mirabella, Vito Raineri, F. Priolo
المصدر: Applied physics letters 83 (2003): 2659–2661. doi:10.1063/1.1613032
info:cnr-pdr/source/autori:Giannazzo F., Goghero D., Raineri V., Mirabella S., Priolo F./titolo:Scanning capacitance microscopy on ultranarrow doping profiles in Si/doi:10.1063%2F1.1613032/rivista:Applied physics letters/anno:2003/pagina_da:2659/pagina_a:2661/intervallo_pagine:2659–2661/volume:83مصطلحات موضوعية: Materials science, Physics and Astronomy (miscellaneous), Silicon, business.industry, Doping, chemistry.chemical_element, Scanning capacitance microscopy, CMOS technology, Bevel, SCM, Scanning probe microscopy, Optics, chemistry, Scanning ion-conductance microscopy, Sample preparation, Carrier profiling, AFM, business, Image resolution, Shallow junctions
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aafd69e509cd5ee3b356000585150cac
http://hdl.handle.net/20.500.11769/17809 -
7
المؤلفون: Filippo Giannazzo, Salvo Mirabella, D. Goghero, E Napolitane, F. Priolo, Vito Raineri
المصدر: Scopus-Elsevier
Microscopy of Semiconducting Materials 2003 ISBN: 9781351074636
Microscopy of Semiconducting Materials 2003
Conference on Microscopy of Semiconducting Materials, pp. 363–372, Univ Cambridge, Cambridge, ENGLAND, MAR 31, 2003
info:cnr-pdr/source/autori:Raineri V, Goghero D, Giannazzo F, Mirabella S, Priolo F, Napolitani E/congresso_nome:Conference on Microscopy of Semiconducting Materials/congresso_luogo:Univ Cambridge, Cambridge, ENGLAND/congresso_data:MAR 31, 2003/anno:2003/pagina_da:363/pagina_a:372/intervallo_pagine:363–372مصطلحات موضوعية: Materials science, Semiconductor, business.industry, Scientific method, Optoelectronics, Scanning capacitance microscopy, SILICON, business
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f6bb5a2add4a547bfccbf0dd52b40d6e
http://hdl.handle.net/20.500.11769/76395 -
8
المؤلفون: F. Priolo, Vito Raineri, Filippo Giannazzo, D. Goghero, Salvo Mirabella
المصدر: Journal of vacuum science & technology. B, Microelectronics and nanometer structures 22 (2004): 369–372. doi:10.1116/1.1638773
info:cnr-pdr/source/autori:F. Giannazzo, S. Mirabella, F. Priolo, D. Goghero, V. Raineri/titolo:Investigation of two dimensional diffusion of the self-interstitials in crystalline Si at 800 °C and at room temperature/doi:10.1116%2F1.1638773/rivista:Journal of vacuum science & technology. B, Microelectronics and nanometer structures/anno:2004/pagina_da:369/pagina_a:372/intervallo_pagine:369–372/volume:22
Scopus-Elsevier
info:cnr-pdr/source/autori:Giannazzo, F; Mirabella, S; Priolo, F; Goghero, D; Raineri, V/titolo:Investigation of two-dimensional diffusion of the self-interstitials in crystalline silicon at 800 degrees C and at room temperature/doi:10.1116%2F1.1638773/rivista:Journal of vacuum science & technology. B, Microelectronics and nanometer structures/anno:2004/pagina_da:369/pagina_a:372/intervallo_pagine:369–372/volume:22مصطلحات موضوعية: Self-diffusion, Materials science, Silicon, Annealing (metallurgy), Band gap, DOPANT DIFFUSION, General Engineering, Analytical chemistry, Oxide, chemistry.chemical_element, SCANNING CAPACITANCE MICROSCOPY, Scanning capacitance microscopy, Crystallographic defect, Crystallography, chemistry.chemical_compound, chemistry, SI, Crystalline silicon
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eb968c157a12a6e2ca5ce6eede94b00b
https://doi.org/10.1116/1.1638773 -
9Simulation of scanning capacitance microscopy measurements on ultranarrow doping profiles in silicon
المؤلفون: S. F. Liotta, Filippo Giannazzo, Vito Raineri, S. Rinaudo, D. Goghero, F. Priolo, Salvo Mirabella
المصدر: Journal of vacuum science & technology. B, Microelectronics and nanometer structures 22 (2004): 394–398. doi:10.1116/1.1622671
info:cnr-pdr/source/autori:Giannazzo, F; Goghero, D; Raineri, V; Mirabella, S; Priolo, F; Liotta, SF; Rinaudo, S/titolo:Simulation of scanning capacitance microscopy measurements on ultranarrow doping profiles in silicon/doi:10.1116%2F1.1622671/rivista:Journal of vacuum science & technology. B, Microelectronics and nanometer structures/anno:2004/pagina_da:394/pagina_a:398/intervallo_pagine:394–398/volume:22
Scopus-Elsevierمصطلحات موضوعية: DEVICES, Materials science, Silicon, business.industry, Doping, General Engineering, chemistry.chemical_element, Magnification, CONTRAST REVERSAL, Scanning capacitance microscopy, Bevel, Full width, Scanning probe microscopy, Cross section (physics), Optics, chemistry, business
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bdc932b947d7c5448e1d584790594292
https://doi.org/10.1116/1.1622671 -
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المؤلفون: D. Goghero, Vito Raineri, Filippo Giannazzo
المصدر: Journal of vacuum science & technology. B, Microelectronics and nanometer structures 22 (2004): 2391–2397. doi:10.1116/1.1795252
info:cnr-pdr/source/autori:Giannazzo, F; Goghero, D; Raineri, V/titolo:Experimental aspects and modeling for quantitative measurements in scanning capacitance microscopy/doi:10.1116%2F1.1795252/rivista:Journal of vacuum science & technology. B, Microelectronics and nanometer structures/anno:2004/pagina_da:2391/pagina_a:2397/intervallo_pagine:2391–2397/volume:22مصطلحات موضوعية: Reproducibility, Materials science, business.industry, Calibration curve, doping profiles, General Engineering, Analytical chemistry, Diamond, semiconductors, Scanning capacitance microscopy, engineering.material, scanning capacitance microscopy, Scanning probe microscopy, Coating, Calibration, engineering, Optoelectronics, business, Electrical conductor
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a35a6b175f408c5b36bb3f370d180d8b
https://doi.org/10.1116/1.1795252
