المؤلفون: Gupta, Gaurav, D. Thammaiah, Shivakumar, Nanver, Lis K., Hueting, Raymond J. E.

المصدر: Journal of Applied Physics; 8/7/2020, Vol. 128 Issue 5, p1-13, 13p, 3 Diagrams, 11 Graphs

مصطلحات موضوعية: BIPOLAR transistors, TRANSISTORS, DIODES, SCHOTTKY barrier diodes, PHYSICAL vapor deposition, LIGHT emitting diodes

المؤلفون: D. Thammaiah Shivakumar, Tihomir Knežević, Lis K. Nanver

المساهمون: MESA+ Institute, Integrated Devices and Systems

المصدر: Shivakumar, D T, Knežević, T & Nanver, L K 2021, ' Nanometer-thin pure boron CVD layers as material barrier to Au or Cu metallization of Si ', Journal of Materials Science: Materials in Electronics, vol. 32, no. 6, pp. 7123-7135 . https://doi.org/10.1007/s10854-021-05422-7
Journal of Materials Science: Materials in Electronics, 32(6), 7123-7135. Springer

مصطلحات موضوعية: Materials science, Silicon, aluminum (Al), electron-beam-assisted physical vapor deposition (EBPVD), copper (Cu), gold (Au), material barrier, boron thin-films, ultrashallow junctions, UT-Hybrid-D, chemistry.chemical_element, 02 engineering and technology, 01 natural sciences, Electron beam physical vapor deposition, Aluminium, 0103 physical sciences, Electrical and Electronic Engineering, Boron, Deposition (law), 010302 applied physics, business.industry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Copper, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, chemistry, Physical vapor deposition, Optoelectronics, Nanometre, 0210 nano-technology, business

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::58892b58c680f53128507fd0539cd3ac
https://doi.org/10.1007/s10854-021-05422-7