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1دورية أكاديمية
المؤلفون: Jangsaeng Kim, Wonjun Shin, Jiyong Yim, Dongseok Kwon, Daewoong Kwon, Jong‐Ho Lee
المصدر: Advanced Intelligent Systems, Vol 6, Iss 6, Pp n/a-n/a (2024)
مصطلحات موضوعية: computing‐in‐memory, exploration, ferroelectric field‐effect‐transistors, low‐frequency noise, reinforcement learning, Computer engineering. Computer hardware, TK7885-7895, Control engineering systems. Automatic machinery (General), TJ212-225
وصف الملف: electronic resource
Relation: https://doaj.org/toc/2640-4567
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2دورية أكاديمية
المؤلفون: Ryun‐Han Koo, Wonjun Shin, Seungwhan Kim, Jiseong Im, Sung‐Ho Park, Jong Hyun Ko, Dongseok Kwon, Jae‐Joon Kim, Daewoong Kwon, Jong‐Ho Lee
المصدر: Advanced Science, Vol 11, Iss 5, Pp n/a-n/a (2024)
مصطلحات موضوعية: ferroelectric, hafnium oxide, low‐frequency noise, neuromorphic, power‐efficient, Science
وصف الملف: electronic resource
Relation: https://doaj.org/toc/2198-3844
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3دورية أكاديمية
المؤلفون: Dongseok Kwon, Eun Chan Park, Wonjun Shin, Ryun-Han Koo, Joon Hwang, Jong-Ho Bae, Daewoong Kwon, Jong-Ho Lee
المصدر: Advanced Intelligent Systems, Vol 5, Iss 12, Pp n/a-n/a (2023)
مصطلحات موضوعية: ferroelectric, ferroelectric thin-film transistors, indium–gallium–zinc oxide, metal–ferroelectric–metal–insulator–semiconductor, neuromorphic systems, synapses, Computer engineering. Computer hardware, TK7885-7895, Control engineering systems. Automatic machinery (General), TJ212-225
وصف الملف: electronic resource
Relation: https://doaj.org/toc/2640-4567
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4دورية أكاديمية
المؤلفون: Munhyeon Kim, Sihyun Kim, Kitae Lee, Jong-Ho Lee, Byung-Gook Park, Daewoong Kwon
المصدر: IEEE Journal of the Electron Devices Society, Vol 11, Pp 95-100 (2023)
مصطلحات موضوعية: GAA MOSFET, parasitic capacitance, inverter propagation delay, dynamic power, area scaling, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
وصف الملف: electronic resource
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5دورية أكاديمية
المؤلفون: Wonjun Shin, Kyung Kyu Min, Jong-Ho Bae, Jaehyeon Kim, Ryun-Han Koo, Dongseok Kwon, Jae-Joon Kim, Daewoong Kwon, Jong-Ho Lee
المصدر: Advanced Intelligent Systems, Vol 5, Iss 6, Pp n/a-n/a (2023)
مصطلحات موضوعية: 1/f noise, ferroelectric tunnel junction, low-frequency noise, neuromorphic computing, Computer engineering. Computer hardware, TK7885-7895, Control engineering systems. Automatic machinery (General), TJ212-225
وصف الملف: electronic resource
Relation: https://doaj.org/toc/2640-4567
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6دورية أكاديمية
المؤلفون: Wonjun Shin, Jiyong Im, Ryun‐Han Koo, Jaehyeon Kim, Ki‐Ryun Kwon, Dongseok Kwon, Jae‐Joon Kim, Jong‐Ho Lee, Daewoong Kwon
المصدر: Advanced Science, Vol 10, Iss 15, Pp n/a-n/a (2023)
مصطلحات موضوعية: in‐memory‐computing, low‐frequency noise (LFN), selective detection, tungsten oxide, Science
وصف الملف: electronic resource
Relation: https://doaj.org/toc/2198-3844
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7دورية أكاديمية
المؤلفون: An Hoang-Thuy Nguyen, Manh-Cuong Nguyen, Anh-Duy Nguyen, Ji-Yong Yim, Jeong-Han Kim, No-Hwal Park, Seung-Joon Jeon, Daewoong Kwon, Rino Choi
المصدر: Nano Convergence, Vol 9, Iss 1, Pp 1-6 (2022)
مصطلحات موضوعية: Chemical solution deposition, Hafnium zirconium oxide, Pt bottom electrodes, Phase transformation, Pt grain size, Technology, Chemical technology, TP1-1185, Biotechnology, TP248.13-248.65, Science, Physics, QC1-999
وصف الملف: electronic resource
Relation: https://doaj.org/toc/2196-5404
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8دورية أكاديمية
المؤلفون: Kitae Lee, Sihyun Kim, Jong-Ho Lee, Byung-Gook Park, Daewoong Kwon
المصدر: IEEE Journal of the Electron Devices Society, Vol 10, Pp 13-18 (2022)
مصطلحات موضوعية: Ferroelectric-gate field-effect transistor (FeFET), Ferroelectric devices, one transistor dynamic random-access memory (1T-DRAM), endurance characteristics of FeFET, recess channel, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
وصف الملف: electronic resource
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9دورية أكاديمية
المؤلفون: Hyun Woo Kim, Daewoong Kwon
المصدر: IEEE Journal of the Electron Devices Society, Vol 9, Pp 286-294 (2021)
مصطلحات موضوعية: Band-to-band tunneling (BTBT), vertical tunnel field-effect transistor (vertical tunnel FET), ternary inverter, subthreshold swing (SS), ternary CMOS (T-CMOS), line tunneling, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
وصف الملف: electronic resource
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10دورية أكاديمية
المؤلفون: Hyun Woo Kim, Daewoong Kwon
المصدر: IEEE Journal of the Electron Devices Society, Vol 9, Pp 359-364 (2021)
مصطلحات موضوعية: Band-to-band tunneling (BTBT), gate-normal tunnel FET (TFET), L-shaped TFET, corner tunneling, subthreshold swing (SS), hump phenomenon, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
وصف الملف: electronic resource