يعرض 1 - 10 نتائج من 198 نتيجة بحث عن '"De Marneffe, J.-F."', وقت الاستعلام: 1.12s تنقيح النتائج
  1. 1
    مؤتمر
    Novel Low Thermal Budget CMOS RMG: Performance and Reliability Benchmark Against Conventional High Thermal Budget Gate Stack Solutions

    المؤلفون: Franco, J., Arimura, H., de Marneffe, J.-F., Brus, S., Ritzenthaler, R., Litta, E. Dentoni, Croes, K., Kaczer, B., Horiguchi, N.

    المصدر: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) VLSI Technology and Circuits (VLSI Technology and Circuits), 2023 IEEE Symposium on. :1-2 Jun, 2023

    Relation: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

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  2. 2
    مؤتمر
    Novel low thermal budget gate stack solutions for BTI reliability in future Logic Device technologies : Invited paper

    المؤلفون: Franco, J., Arimura, H., de Marneffe, J.-F., Vandooren, A., Ragnarsson, L.-A, Wu, Z., Claes, D., Litta, E. Dentoni, Horiguchi, N., Croes, K., Linten, D., Grasser, T., Kaczer, B.

    المصدر: 2021 International Conference on IC Design and Technology (ICICDT) IC Design and Technology (ICICDT), 2021 International Conference on. :1-4 Sep, 2021

    Relation: 2021 International Conference on IC Design and Technology (ICICDT)

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  3. 3
    مؤتمر
    Low thermal budget PBTI and NBTI reliability solutions for multi-Vth CMOS RMG stacks based on atomic oxygen and hydrogen treatments

    المؤلفون: Franco, J., Arimura, H., De Marneffe, J.-F., Claes, D., Brus, S., Vandooren, A., Litta, E. Dentoni, Horiguchi, N., Croes, K., Kaczer, B.

    المصدر: 2022 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2022 International. :30.4.1-30.4.4 Dec, 2022

    Relation: 2022 IEEE International Electron Devices Meeting (IEDM)

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  4. 4
    مؤتمر
    Low Temperature Atomic Hydrogen Treatment for Superior NBTI Reliability—Demonstration and Modeling across SiO2 IL Thicknesses from 1.8 to 0.6 nm for I/O and Core Logic

    المؤلفون: Franco, J., de Marneffe, J.-F., Vandooren, A., Arimura, H., Ragnarsson, L.-A, Claes, D., Litta, E. Dentoni, Horiguchi, N., Croes, K., Linten, D., Grasser, T., Kaczer, B.

    المصدر: 2021 Symposium on VLSI Technology VLSI Technology, 2021 Symposium on. :1-2 Jun, 2021

    Relation: 2021 Symposium on VLSI Technology

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  5. 5
    مؤتمر
    Low-temperature atomic and molecular hydrogen anneals for enhanced chemical $\mathbf{SiO}_{2}$ IL quality in low thermal budget RMG stacks

    المؤلفون: Franco, J., Arimura, H., de Marneffe, J.-F., Wu, Z., Vandooren, A., Ragnarsson, L.-A, Litta, E. Dentoni, Horiguchi, N., Croes, K., Linten, D., Afanas'ev, V., Grasser, T., Kaczer, B.

    المصدر: 2021 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2021 IEEE International. :31.4.1-31.4.4 Dec, 2021

    Relation: 2021 IEEE International Electron Devices Meeting (IEDM)

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  6. 6
    مؤتمر
    Gas Phase Pore Stuffing for the protection of organo-silicate glass dielectric materials

    المؤلفون: Fujikawa, M., de Marneffe, J. -F., Chanson, R., Gavan, K.Babaei, Rezvanov, A., Lazzarino, F., Tokei, Z., Yamaguchi, T., Nozawa, S., Sato, N.

    المصدر: 2018 International Symposium on Semiconductor Manufacturing (ISSM) Semiconductor Manufacturing (ISSM), 2018 International Symposium on. :1-3 Dec, 2018

    Relation: 2018 International Symposium on Semiconductor Manufacturing (ISSM)

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  7. 7
    دورية أكاديمية
    Enhancing dielectric passivation on monolayer WS2 via a sacrificial graphene oxide seeding layer

    المؤلفون: Wyndaele, P.-J.Aff1, Aff2, IDs4169902400464x_cor1, de Marneffe, J.-F., Sergeant, S., de la Rosa, C. J. L., Brems, S., Caro, A. M., De Gendt, S.Aff1, Aff2

    المصدر: npj 2D Materials and Applications. 8(1)

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  8. 8
    مؤتمر
    Gas Phase Pore Stuffing (GPPS)

    المؤلفون: Fujikawa, M., Yamaguchi, T., Nozawa, S., Niino, R., Chanson, R., Gavan, K. Babaei, Lazzarino, F., de Marneffe, J-F.

    المصدر: 2018 IEEE International Interconnect Technology Conference (IITC) Interconnect Technology Conference (IITC), 2018 IEEE International. :129-131 Jun, 2018

    Relation: 2018 IEEE International Interconnect Technology Conference (IITC)

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  9. 9
    مؤتمر
    Wafer-scale integration of double gated WS2-transistors in 300mm Si CMOS fab

    المؤلفون: Asselberghs, I., Smets, Q., Schram, T., Groven, B., Verreck, D., Afzalian, A., Arutchelvan, G., Gaur, A., Cott, D., Maurice, T., Brems, S., Kennes, K., Phommahaxay, A., Dupuy, E., Radisic, D., de Marneffe, J-F, Thiam, A., Li, W., Devriendt, K., Huyghebaert, C., Lin, D., Caymax, M., Morin, P., Radu, I.P.

    المصدر: 2020 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2020 IEEE International. :40.2.1-40.2.4 Dec, 2020

    Relation: 2020 IEEE International Electron Devices Meeting (IEDM)

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  10. 10
    مؤتمر
    Atomic Hydrogen Exposure to Enable High-Quality Low-Temperature SiO2 with Excellent pMOS NBTI Reliability Compatible with 3D Sequential Tier Stacking

    المؤلفون: Franco, J., de Marneffe, J.-F., Vandooren, A., Kimura, Y., Nyns, L., Wu, Z., El-Sayed, A.-M., Jech, M., Waldhoer, D., Claes, D., Arimura, H., Ragnarsson, L.-A, Afanas'ev, V., Stesmans, A., Horiguchi, N., Linten, D., Grasser, T., Kaczer, B.

    المصدر: 2020 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2020 IEEE International. :31.2.1-31.2.4 Dec, 2020

    Relation: 2020 IEEE International Electron Devices Meeting (IEDM)

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