يعرض 1 - 10 نتائج من 32 نتيجة بحث عن '"Dettmer, R.W."', وقت الاستعلام: 0.92s تنقيح النتائج
  1. 1
    مؤتمر
    A highly manufacturable 0.2 /spl mu/m AlGaAs/InGaAs PHEMT fabricated using the single-layer integrated-metal FET (SLIMFET) process

    المؤلفون: Havasy, C.K., Quach, T.K., Bozada, C.A., DeSalvo, G.C., Dettmer, R.W., Ebel, J.L., Gillespie, J.K., Nakano, K., Via, G.D.

    المصدر: GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Gallium arsenide integrated circuit symposium Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1995. Technical Digest 1995., 17th Annual IEEE. :89-92 1995

    Relation: GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995

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  2. 2
    مؤتمر
    Microwave power heterojunction bipolar transistors fabricated with thermal shunt and bathtub

    المؤلفون: Bozada, C.A., Barlage, D.W., Barrette, J.P., Dettmer, R.W., Mack, M.P., Sewell, J.S., Via, G.D., Yang, L.W., Helms, D.R., Komiak, J.J.

    المصدر: GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995 Gallium arsenide integrated circuit symposium Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1995. Technical Digest 1995., 17th Annual IEEE. :155-158 1995

    Relation: GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995

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  3. 3
    مؤتمر
    Gate optimization of AlGaN/GaN HEMTs using WSi, Ir, Pd, and Ni Schottky contacts

    المؤلفون: Jessen, G.H., Fitch, R.C., Gillespie, J.K., Via, G.D., Moser, N.A., Yannuzzi, M.J., Crespo, A., Dettmer, R.W., Jenkins, T.J.

    المصدر: 25th Annual Technical Digest 2003. IEEE Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. GaAs IC symposium Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. 25th Annual Technical Digest 2003. IEEE. :277-279 2003

    Relation: GaAs IC Symposium. 25th Annual Technical Digest 2003

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  4. 4
    دورية أكاديمية
    The energy dependence of proton-induced degradation in AlGaN/GaN high electron mobility transistors

    المؤلفون: Xinwen Hu, Choi, B.K., Barnaby, H.J., Fleetwood, D.M., Schrimpf, R.D., Sungchul Lee, Shojah-Ardalan, S., Wilkins, R., Mishra, U.K., Dettmer, R.W.

    المصدر: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 51(2):293-297 Apr, 2004

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  5. 5
    دورية أكاديمية
    Characterization of 1.8-MeV proton-irradiated AlGaN/GaN field-effect transistor structures by nanoscale depth-resolved luminescence spectroscopy

    المؤلفون: White, B.D., Bataiev, M., Brillson, L.J., Choi, B.K., Fleetwood, D.M., Schrimpf, R.D., Pantelides, S.I., Dettmer, R.W., Schaff, W.J., Champlain, J.G., Mishra, A.K.

    المصدر: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 49(6):2695-2701 Dec, 2002

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  6. 6
    دورية أكاديمية
    Proton-induced degradation in AlGaAs/GaAs heterojunction bipolar transistors

    المؤلفون: Xinwen Hu, Choi, B.K., Barnaby, H.J., Fleetwood, D.M., Schrimpf, R.D., Galloway, K.F., Weller, R.A., McDonald, K., Mishra, U.K., Dettmer, R.W.

    المصدر: IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 49(6):3213-3216 Dec, 2002

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  7. 7
    مؤتمر
    Gallium arsenide metal-insulator-semiconductor field effect transistors (MISFET) with low temperature GaAs insulating layers

    المؤلفون: Bozada, C.A., Dettmer, R.W., Eppers, C.L., Nakano, K., Stutz, C.E., Walline, R.E.

    المصدر: [1991] Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits High Speed Semiconductor Devices and Circuits, 1991., Proceedings IEEE/Cornell Conference on Advanced Concepts in. :478-487 1991

    Relation: Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

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  8. 8
    دورية أكاديمية
    Xs-MET-a reduced complexity fabrication process using complementary heterostructure field effect transistors for analog, low power, space applications

    المؤلفون: Cerny, C.L., Via, G.D., Ebel, J.L., DeSalvo, G.C., Quach, T.K., Bozada, C.A., Dettmer, R.W., Gillespie, J.K., Jenkins, T.J., Pettiford, C.I., Sewell, J.S., Ehret, J.E., Merkel, K., Wilson, A., Lyke, J.

    المصدر: IEEE Aerospace and Electronic Systems Magazine IEEE Aerosp. Electron. Syst. Mag. Aerospace and Electronic Systems Magazine, IEEE. 13(3):7-14 Mar, 1998

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  9. 9
    دورية أكاديمية
    Bias, frequency, and area dependencies of high frequency noise in AlGaAs/GaAs HBT's

    المؤلفون: Liou, J.J., Jenkins, T.J., Liou, L.L., Neidhard, R., Barlage, D.W., Fitch, R., Barrette, J.P., Mack, M., Bozada, C.A., Lee, R.H.Y., Dettmer, R.W., Sewell, J.S.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 43(1):116-122 Jan, 1996

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  10. 10
    دورية أكاديمية
    Simplified ohmic and Schottky contact formation for field effect transistors using the single layer integrated metal field effect transistor (SLIMFET) process

    المؤلفون: DeSalvo, G.C., Quach, T.K., Bozada, C.A., Dettmer, R.W., Nakano, K., Gillespie, J.K., Via, G.D., Ebel, J.L., Havasy, C.K.

    المصدر: IEEE Transactions on Semiconductor Manufacturing IEEE Trans. Semicond. Manufact. Semiconductor Manufacturing, IEEE Transactions on. 8(3):314-318 Aug, 1995

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