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1دورية أكاديمية
المؤلفون: Saleh, M., Bayoumi, A.M., Abdelhamid, H.
المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 70(11):5535-5542 Nov, 2023
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2مؤتمر
المؤلفون: Bury, E., Vandemaele, M., Franco, J., Chasin, A., Tyaginov, S., Vandooren, A., Ritzenthaler, R., Mertens, H., Fortuny, J. Diaz, Horiguchi, N., Linten, D., Kaczer, B.
المصدر: 2023 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2023 IEEE International. :1-8 Mar, 2023
Relation: 2023 IEEE International Reliability Physics Symposium (IRPS)
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3مؤتمر
المؤلفون: Cao, Lei, Liu, Yang, Wu, Zhenhua, Zhang, Qingzhu, Yao, Jiaxin, Luo, Yanna, Xu, Haoqing, Zhao, Peng, Luo, Kun, Wu, Yongqin, Bu, Weihai, Yin, Huaxiang
المصدر: 2022 China Semiconductor Technology International Conference (CSTIC) Semiconductor Technology International Conference (CSTIC), 2022 China. :1-3 Jun, 2022
Relation: 2022 China Semiconductor Technology International Conference (CSTIC)
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4مؤتمر
المؤلفون: Shibib, Ayman, Lorenz, Leo, Ohashi, Hiromichi
المصدر: 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2018 IEEE 30th International Symposium on. :1-7 May, 2018
Relation: 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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5مؤتمر
المؤلفون: Amanci, Adrian Z., Dawson, Francis P., Ruda, Harry E.
المصدر: 2014 International Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE ASIA) Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE-ASIA), 2014 International. :1303-1308 May, 2014
Relation: 2014 International Power Electronics Conference (IPEC-Hiroshima 2014 ECCE-ASIA)
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6دورية أكاديمية
المؤلفون: Jingwen Yang, Ziqiang Huang, Dawei Wang, Tao Liu, Xin Sun, Lewen Qian, Zhecheng Pan, Saisheng Xu, Chen Wang, Chunlei Wu, Min Xu, David Wei Zhang
المصدر: Micromachines, Vol 14, Iss 6, p 1107 (2023)
مصطلحات موضوعية: Si nanosheet gate-all-around (NS-GAA) transistors, S/D-first, fully bottom dielectric isolation (BDI), Full BDI_Last, TCAD simulation, Mechanical engineering and machinery, TJ1-1570
وصف الملف: electronic resource
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7دورية أكاديمية
المؤلفون: Krasovskii, V. I., Rasmagin, S. I.Aff1
المصدر: Optics and Spectroscopy. 129(1):102-109
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8دورية أكاديمية
لا يتم عرض هذه النتيجة على الضيوف.
تسجيل الدخول للوصول الكامل. -
9دورية أكاديمية
لا يتم عرض هذه النتيجة على الضيوف.
تسجيل الدخول للوصول الكامل. -
10
المؤلفون: Sagarika Mukesh, Jingyun Zhang
المصدر: Electronics; Volume 11; Issue 21; Pages: 3589
مصطلحات موضوعية: Computer Networks and Communications, Hardware and Architecture, Control and Systems Engineering, Signal Processing, Electrical and Electronic Engineering, gate-all-around nanosheet FETs, multi-Vt offerings, bottom dielectric isolation, power-performance improvement, transistor scaling, Moore’s Law
وصف الملف: application/pdf
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