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1دورية أكاديمية
المؤلفون: Bumai, Yu. A., Dolgikh, N. I., Kharchenko, A. A., Valeev, V. F., Nuzhdin, V. I., Khaibullin, R. I., Nagim, F. A., Lukashevich, M. G., Odzhaev, V. B.
المصدر: Journal of Applied Spectroscopy. May 2014 81(2):188-192
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2دورية أكاديمية
المؤلفون: Bumai, Yu. A., Volobuev, V. S., Valeev, V. F., Dolgikh, N. I., Lukashevich, M. G., Khaibullin, R. I., Nuzhdin, V. I., Odzhaev, V. B.
المصدر: Journal of Applied Spectroscopy. November 2012 79(5):773-779
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3مؤتمر
المؤلفون: BYKOVSKY, V. A., HITKO, V. I., DOLGIKH, N. I., EMTSEV, V. V., HALLER, E. E.
المصدر: Shallow-Level Centers in Semiconductors - Proceedings of the 7th International Conference; 1997, p453-458, 6p
مصطلحات موضوعية: GERMANIUM, SEMICONDUCTOR defects, SEMICONDUCTOR doping, DOPED semiconductors, EXCITON theory
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4دورية
المؤلفون: Bykovskii, V. A., Dolgikh, N. I., Emtsev, V. V.
المصدر: Radiation Effects and Defects in Solids; March 1989, Vol. 107 Issue: 2 p85-92, 8p
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