يعرض 1 - 10 نتائج من 14 نتيجة بحث عن '"Domes, Daniel"', وقت الاستعلام: 1.27s تنقيح النتائج
  1. 1
    مؤتمر
    A Simulation Model for SiC MOSFET Switching Transients Controlled by an Adaptive Gate Driver with the Capability of Reducing Switching Losses and EMI across the Full Operating Range

    المؤلفون: Li, Zheming, Maier, Robert W., Bakran, Mark-M., Niedernostheide, Franz-J., Domes, Daniel

    المصدر: 2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe) Power Electronics and Applications (EPE'22 ECCE Europe), 2022 24th European Conference on. :1-10 Sep, 2022

    Relation: 2022 24th European Conference on Power Electronics and Applications (EPE’22 ECCE Europe)

    أضف إلى المفضلة
  2. 2
    مؤتمر
    The effect of different stray inductances on the performance of various types of IGBTs — Is less always better?

    المؤلفون: Hain, Stefan, Bakran, Mark-M., Jaeger, Christian, Niedernostheide, Franz-J., Domes, Daniel, Heer, Daniel

    المصدر: 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe) Power Electronics and Applications (EPE'15 ECCE-Europe), 2015 17th European Conference on. :1-9 Sep, 2015

    Relation: 2015 17th European Conference on Power Electronics and Applications (EPE '15 ECCE Europe)

    Full Text Finder
    أضف إلى المفضلة
  3. 3
    مؤتمر
    6.5kV RCDC: For increased power density in IGBT-modules

    المؤلفون: Werber, Dorothea, Pfirsch, Frank, Gutt, Thomas, Komarnitskyy, Volodymyr, Schaeffer, Carsten, Hunger, Thomas, Domes, Daniel

    المصدر: 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on. :35-38 Jun, 2014

    Relation: 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

    Full Text Finder
    أضف إلى المفضلة
  4. 4
    مؤتمر
    Power circuit design for clean switching

    المؤلفون: Bayerer, Reinhold, Domes, Daniel

    المصدر: 2010 6th International Conference on Integrated Power Electronics Systems Integrated Power Electronics Systems (CIPS), 2010 6th International Conference on. :1-6 Mar, 2010

    Relation: 2010 6th International Conference on Integrated Power Electronics Systems (CIPS)

    Full Text Finder
    أضف إلى المفضلة
  5. 5
    مؤتمر
    A new, universal and fast switching gate-drive-concept for SiC-JFETs based on current source principle

    المؤلفون: Domes, Daniel, Werner, Ralf, Hofmann, Wilfried, Domes, Konrad, Kraus, Sebastian

    المصدر: 2006 37th IEEE Power Electronics Specialists Conference Power Electronics Specialists Conference, 2006. PESC '06. 37th IEEE. :1-6 Jun, 2006

    Relation: 2006 37th IEEE Power Electronics Specialists Conference

    Full Text Finder
    أضف إلى المفضلة
  6. 6
    مؤتمر
    Optimized control method for reverse conducting IGBTs

    المؤلفون: Lexow, Daniel, Wiencke, Holger, Fleisch, Karl, Domes, Daniel, Eckel, Hans-Gunter

    المصدر: 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe) Power Electronics and Applications (EPE'17 ECCE Europe), 2017 19th European Conference on. :P.1-P.9 Sep, 2017

    Relation: 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)

    Full Text Finder
    أضف إلى المفضلة
  7. 7
    مؤتمر
    Passive turn-on process of IGBTs in Matrix converter applications

    المؤلفون: Baburske, Roman, Domes, Daniel, Lutz, Josef, Hofmann, Wilfried

    المصدر: 2009 13th European Conference on Power Electronics and Applications Power Electronics and Applications, 2009. EPE '09. 13th European Conference on. :1-7 Sep, 2009

    Relation: 2009 13th European Conference on Power Electronics and Applications (EPE)

    Full Text Finder
    أضف إلى المفضلة
  8. 8
    مؤتمر
    SiC JFET in Contrast to High Speed Si IGBT in Matrix Converter Topology

    المؤلفون: Domes, Daniel, Hofmann, Wilfried

    المصدر: 2007 IEEE Power Electronics Specialists Conference Power Electronics Specialists Conference, 2007. PESC 2007. IEEE. :54-60 Jun, 2007

    Relation: 2007 IEEE Power Electronics Specialists Conference

    Full Text Finder
    أضف إلى المفضلة
  9. 9
    دورية أكاديمية

    لا يتم عرض هذه النتيجة على الضيوف.

    View this record from ISI Web of Science
    أضف إلى المفضلة
  10. 10
    دورية
    Comparative Simulation Study of Dynamic Behavior of the Body-Diode for 4H-SiC JFET and MOSFET

    المؤلفون: Elpelt, Rudolf, Zippelius, Bernd, Domes, Daniel

    المصدر: Materials Science Forum; May 2016, Vol. 858 Issue: 1 p817-820, 4p

    Find this article in full text from ProQuest Full Text Finder
    أضف إلى المفضلة
أدوات البحث: أحصل على تغذية RSS – أرسل هذا البحث بالبريد الإلكتروني – حفظ البحث – جدول التنبيهات: لا شيء