المؤلفون: Kuo-Ching Huang, Yean-Kuen Fang, Dun-Nian Yang, Chii-Wen Chen, Hung-Cheng Sung, Di-Son Kuo, Wang, C.S., Mong-Song Liang

المصدر: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 21(7):359-361 Jul, 2000

المؤلفون: Di-Son Kuo, Dun-Nian Yang, Chii-Wen Chen, Hung-Cheng Sung, Kuo-Ching Huang, Yean-Kuen Fang, C.S. Wang, Mong-Song Liang

المصدر: IEEE Electron Device Letters. 21:359-361

مصطلحات موضوعية: Hardware_MEMORYSTRUCTURES, Materials science, business.industry, Gate voltage, Flash memory, Electronic, Optical and Magnetic Materials, Gate oxide, Charge trap flash, Electronic engineering, Optoelectronics, Electrical and Electronic Engineering, business, Cycling, Degradation (telecommunications), Voltage

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::1164b3b661c50216a652970ab92307f4
https://doi.org/10.1109/55.847380