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1
المؤلفون: Hisataka Meguro, E. Sakagami, M. Sato, N. Arai, Y.Y. Araki, Eiji Kamiya, Kuniyoshi Yoshikawa, Hiroaki Tsunoda, S. Mori
المصدر: IEEE Transactions on Electron Devices. 43:47-53
مصطلحات موضوعية: Materials science, business.industry, Transistor, Electrical engineering, Oxide, Dielectric, Flash memory, Electronic, Optical and Magnetic Materials, law.invention, Threshold voltage, Non-volatile memory, chemistry.chemical_compound, chemistry, law, Optoelectronics, Electrical and Electronic Engineering, EPROM, business, Scaling
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2
المؤلفون: Kuniyoshi Yoshikawa, N. Arai, S. Mori, Y. Ohshima, E. Sakagami, Y. Kaneko
المصدر: IEEE Transactions on Electron Devices. 39:283-291
مصطلحات موضوعية: Materials science, business.industry, Electrical engineering, Oxide, Dielectric, Nitride, Electronic, Optical and Magnetic Materials, Threshold voltage, Non-volatile memory, chemistry.chemical_compound, chemistry, Optoelectronics, Electrical and Electronic Engineering, EPROM, Thin film, business, Voltage
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3
المؤلفون: Kuniyoshi Yoshikawa, Y. Ohshima, S. Mori, E. Sakagami, H. Araki, Y. Kaneko, N. Arai, Kazuhito Narita
المصدر: IEEE Transactions on Electron Devices. 38:386-391
مصطلحات موضوعية: Materials science, business.industry, Electrical engineering, Oxide, Equivalent oxide thickness, Dielectric, Nitride, Electronic, Optical and Magnetic Materials, Anode, Non-volatile memory, chemistry.chemical_compound, chemistry, Electric field, Optoelectronics, Electrical and Electronic Engineering, business, Leakage (electronics)
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4
المؤلفون: Y. Iyama, S. Tanaka, N. Ohtsuka, K. Yoshikawa, Naoto Tomita, Junichi Miyamoto, N. Arai, E. Sakagami, Y. Kaneko, Y. Ohsima, S. Mori, K. Imamiya
المصدر: IEEE Journal of Solid-State Circuits. 26:1593-1599
مصطلحات موضوعية: Materials science, business.industry, Electrical engineering, Pin compatibility, Reliability (semiconductor), CMOS, Hardware_INTEGRATEDCIRCUITS, Electronic engineering, Electrical and Electronic Engineering, EPROM, business, Mask ROM, Access time, Voltage, Electronic circuit
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5
المؤلفون: Y. Kaneko, E. Sakagami, S. Mori, Kuniyoshi Yoshikawa, N. Arai, Y. Ohshima
المصدر: International Technical Digest on Electron Devices Meeting.
مصطلحات موضوعية: Physics, business.industry, Vertical scaling, Electrical engineering, Electronic engineering, EPROM, Cell design, business, Scaling, Voltage
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::59fc79d585c2415c566cccc4ef14b6ca
https://doi.org/10.1109/iedm.1989.74349 -
6
المؤلفون: S. Mori, N. Arai, Kuniyoshi Yoshikawa, Kiyomi Naruke, Y. Yamaguchi, E. Sakagami, Kazuhito Narita, Y. Ohshima
المصدر: 1992 Symposium on VLSI Technology Digest of Technical Papers.
مصطلحات موضوعية: Very-large-scale integration, Non-volatile memory, Flash (photography), Gate oxide, Computer science, business.industry, Electronic engineering, Optoelectronics, Non-volatile random-access memory, EPROM, Channel width, business, Cell technology
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::c229966a67ea9386a009c2ac696136cb
https://doi.org/10.1109/vlsit.1992.200636 -
7
المؤلفون: Hironori Banba, E. Sakagami, N. Ohtsuka, R. Sudoh, N. Arai, Y. Iyama, T. Miyaba, E. Kamiya, Naoto Tomita, Akira Umezawa, Y.Y. Araki, Yohei Hiura, Masao Kuriyama, S. Atsumi, M. Tanimoto, Seiichi Mori
المصدر: 1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC.
مصطلحات موضوعية: Hardware_MEMORYSTRUCTURES, Computer science, business.industry, Semiconductor memory, Parallel computing, Flash memory, Non-volatile memory, Charge trap flash, Hardware_INTEGRATEDCIRCUITS, Redundancy (engineering), Racetrack memory, Non-volatile random-access memory, EPROM, business, Computer memory, Computer hardware
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::baefb9af10bee1a76075a407e1d158d8
https://doi.org/10.1109/isscc.1996.488506 -
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المؤلفون: K. Hashimoto, Kuniyoshi Yoshikawa, H. Egawa, K. Hisatomi, Y. Yamaguchi, S. Mori, Hiroaki Tsunoda, Y. Hiura, E. Sakagami, E. Kamiya, N. Arai, M. Tanimoto
المصدر: Proceedings of 1994 VLSI Technology Symposium.
مصطلحات موضوعية: Very-large-scale integration, Flash (photography), Hardware_MEMORYSTRUCTURES, Computer science, law, Charge trap flash, Electronic engineering, NAND gate, EPROM, Flash file system, Flash memory, EEPROM, law.invention
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::0a3747961607abf99714ce6d44c45458
https://doi.org/10.1109/vlsit.1994.324381 -
9
المؤلفون: Y. Ohshima, N. Arai, K. Yoshikawa, Y. Kaneko, E. Sakagami, S. Mori
المصدر: 29th Annual Proceedings Reliability Physics 1991.
مصطلحات موضوعية: Materials science, business.industry, Electrical engineering, Oxide, Dielectric, Nitride, Threshold voltage, law.invention, Non-volatile memory, Capacitor, chemistry.chemical_compound, chemistry, law, Electric field, Optoelectronics, business, Voltage
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::31ed0a7618b9d52817aa7585b80a1b11
https://doi.org/10.1109/relphy.1991.146010 -
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المؤلفون: Y. Ohshima, N. Arai, E. Sakagami, Kuniyoshi Yoshikawa, S. Mori, Y. Kaneko, N. Hosokawa
المصدر: International Technical Digest on Electron Devices.
مصطلحات موضوعية: Very-large-scale integration, Engineering, Fabrication, CMOS, business.industry, Megabit, Electrical engineering, High voltage, EPROM, business, Lithography, Electronic circuit
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::bb55d128383db91f0eab58db86a79e1f
https://doi.org/10.1109/iedm.1990.237218