يعرض 1 - 10 نتائج من 92 نتيجة بحث عن '"Eng, Yi-Chuen"', وقت الاستعلام: 2.06s تنقيح النتائج
  1. 1
    مؤتمر
    Simulation of a novel single junction thin film solar cell

    المؤلفون: Chang, Wan-Rou, Lin, Jyi-Tsong, Eng, Yi-Chuen, Kuo, Yu-Sheng, Chen, Yun-Ru, Lin, Po-Hsieh, Wang, Jian-Yuan

    المصدر: 2013 International Symposium on Next-Generation Electronics Next-Generation Electronics (ISNE), 2013 IEEE International Symposium on. :469-472 Feb, 2013

    Relation: 2013 International Symposium on Next-Generation Electronics (ISNE)

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  2. 2
    مؤتمر
    The effects of block oxide length (Lbo) and height (Hbo) in a bMOS

    المؤلفون: Chen, Kuan Kuan-Yu, Chen, Yu, Lin, Jyi-Tsong, Eng, Yi-Chuen, Hsu, Shih-Wen, Syu, Shu-Huan, Lu, You-Ren

    المصدر: 2012 12th International Workshop on Junction Technology Junction Technology (IWJT), 2012 12th International Workshop on. :138-141 May, 2012

    Relation: 2012 12th International Workshop on Junction Technology (IWJT)

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  3. 3
    مؤتمر
    Junction vs. junctionless vertical MOSFET by using partial SOI structure: A 2D simulation study

    المؤلفون: Syu, Shu-Huan, Lin, Jyi-Tsong, Eng, Yi-Chuen, Hsu, Shih-Wen, Chen, Kuan-Yu, Lu, You-Ren

    المصدر: 2012 12th International Workshop on Junction Technology Junction Technology (IWJT), 2012 12th International Workshop on. :172-175 May, 2012

    Relation: 2012 12th International Workshop on Junction Technology (IWJT)

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  4. 4
    مؤتمر
    Simulation study of junctionless vertical MOSFETs for analog applications

    المؤلفون: Hsu, Shih-Wen, Lin, Jyi-Tsong, Eng, Yi-Chuen, Syu, Shu-Huan, Chen, Kuan-Yu, Lu, You-Ren

    المصدر: 2012 12th International Workshop on Junction Technology Junction Technology (IWJT), 2012 12th International Workshop on. :226-229 May, 2012

    Relation: 2012 12th International Workshop on Junction Technology (IWJT)

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  5. 5
    مؤتمر
    Short-channel characteristics of self-aligned dual-channel source/drain-tied MOSFETs

    المؤلفون: Lu, You-Ren, Lin, Jyi-Tsong, Eng, Yi-Chuen, Hsu, Shih-Wen, Syu, Shu-Huan, Chen, Kuan-Yu

    المصدر: 2012 12th International Workshop on Junction Technology Junction Technology (IWJT), 2012 12th International Workshop on. :242-245 May, 2012

    Relation: 2012 12th International Workshop on Junction Technology (IWJT)

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  6. 6
    مؤتمر
    Design, simulation, and fabrication of a new poly-Si based capacitor-less 1T-DRAM cell

    المؤلفون: Chen, Yun-Ru, Lin, Jyi-Tsong, Chang, Tzu-Feng, Eng, Yi-Chuen, Lin, Po-Hsieh, Chen, Cheng-Hsin

    المصدر: 2012 28th International Conference on Microelectronics Proceedings Microelectronics (MIEL), 2012 28th International Conference on. :85-88 May, 2012

    Relation: 2012 28th International Conference on Microelectronics (MIEL 2012)

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  7. 7
    مؤتمر
    RF performance of the novel planar-type body-connected FinFET fabricated by isolation-last and self-alignment process

    المؤلفون: Lin, Po-Hsieh, Lin, Jyi-Tsong, Eng, Yi-Chuen, Chang, Yu-Che

    المصدر: Ulis 2011 Ultimate Integration on Silicon Ultimate Integration on Silicon (ULIS), 2011 12th International Conference on. :1-4 Mar, 2011

    Relation: 2011 12th International Conference on Ultimate Integration on Silicon (ULIS)

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  8. 8
    مؤتمر
    Numerical study of non-classical unipolar CMOS with different embedded oxide and gate length

    المؤلفون: Sun, Chih-Hung, Lin, Jyi-Tsong, Chen, Hsuan-Hsu, Eng, Yi-Chuen, Kuo, Chih-Hao, Chang, Tze-Feng, Chen, Chun-Yu, Lin, Po-Hsieh, Chiu, Hsien-Nan

    المصدر: 2010 International Symposium on Next Generation Electronics Next-Generation Electronics (ISNE), 2010 International Symposium on. :21-24 Nov, 2010

    Relation: 2010 International Symposium on Next-Generation Electronics (ISNE)

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  9. 9
    مؤتمر
    A simple process of thin-film transistor using the trench-oxide layer for improving 1T-DRAM performance

    المؤلفون: Chiu, Hsien-Nan, Lin, Jyi-Tsong, Eng, Yi-Chuen, Chang, Tzu-Feng, Chen, Cheng-Hsin

    المصدر: 2010 International Symposium on Next Generation Electronics Next-Generation Electronics (ISNE), 2010 International Symposium on. :254-257 Nov, 2010

    Relation: 2010 International Symposium on Next-Generation Electronics (ISNE)

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  10. 10
    مؤتمر
    Characterisation of new vertical MOSFETs with recessed gate

    المؤلفون: Kuo, Chih-Hao, Lin, Jyi-Tsong, Eng, Yi-Chuen, Fan, Yi-Hsuan

    المصدر: 2010 International Symposium on Next Generation Electronics Next-Generation Electronics (ISNE), 2010 International Symposium on. :89-92 Nov, 2010

    Relation: 2010 International Symposium on Next-Generation Electronics (ISNE)

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