المؤلفون: Alexandre Levisse, Marc Bocquet, Marco Rios, Mouhamad Alayan, Mathieu Moreau, Etienne Nowak, Gabriel Molas, Elisa Vianello, David Atienza, Jean-Michel Portal

المصدر: IEEE Access, Vol 8, Pp 109297-109308 (2020)

مصطلحات موضوعية: RRAM, embedded memories, write termination, memory modeling, low-power design, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/9110858/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/84732fc24896498fbef413232efe5b07

المؤلفون: Tifenn Hirtzlin, Marc Bocquet, Bogdan Penkovsky, Jacques-Olivier Klein, Etienne Nowak, Elisa Vianello, Jean-Michel Portal, Damien Querlioz

المصدر: Frontiers in Neuroscience, Vol 13 (2020)

مصطلحات موضوعية: binarized neural networks, resistive memory, memristor, in-memory computing, biologically plausible digital electronics, ASICs, Neurosciences. Biological psychiatry. Neuropsychiatry, RC321-571

وصف الملف: electronic resource

Relation: https://www.frontiersin.org/article/10.3389/fnins.2019.01383/full; https://doaj.org/toc/1662-453X

URL الوصول: https://doaj.org/article/dbd1743fa64545fea508526d5b5e607c

المؤلفون: Gilbert Sassine, Carlo Cagli, Jean-Francois Nodin, Gabriel Molas, Etienne Nowak

المصدر: IEEE Journal of the Electron Devices Society, Vol 6, Pp 696-702 (2018)

مصطلحات موضوعية: Energy consumption, programming time, reliability, resistive random access memory (RRAM), Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/8375685/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/67610c348d6c4294b2cac131367a94ed

المؤلفون: Gabriel Molas, Etienne Nowak

المصدر: Applied Sciences, Vol 11, Iss 23, p 11254 (2021)

مصطلحات موضوعية: memory, nonvolatile memory, reliability, data storage, artificial intelligence, computing, Technology, Engineering (General). Civil engineering (General), TA1-2040, Biology (General), QH301-705.5, Physics, QC1-999, Chemistry, QD1-999

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2076-3417/11/23/11254; https://doaj.org/toc/2076-3417

URL الوصول: https://doaj.org/article/3e207d91becc4bed8eb8a5e257a6ae31

المؤلفون: Etienne Nowak, Yue Zha, Jing Li

المصدر: IEEE Journal of Solid-State Circuits. 55:908-919

مصطلحات موضوعية: Liquid silicon, Computer science, business.industry, 020208 electrical & electronic engineering, Electrical engineering, 02 engineering and technology, Resistive random-access memory, CMOS, Gate array, Hardware_INTEGRATEDCIRCUITS, 0202 electrical engineering, electronic engineering, information engineering, Electrical and Electronic Engineering, Field-programmable gate array, business, Low voltage, Voltage

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::307950b5070b4c1c7e5430108ab23257
https://doi.org/10.1109/jssc.2019.2963005

المؤلفون: Etienne Nowak, Damien Querlioz, Marc Bocquet, Axel Laborieux, Atreya Majumdar, Elisa Vianello, Jean-Michel Portal, Tifenn Hirtzlin, Jacques-Olivier Klein

المساهمون: Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), ANR-18-CE24-0009,NEURONIC,Réseau Neuronal Binaire à base d'architecture hybride de mémoires intégrant des fonctions de calcul (CMOS/RRAM) pour la fusion de capteurs(2018)

المصدر: IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, 2021, 68 (10), pp.4925-4932. ⟨10.1109/TED.2021.3108479⟩
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2021, 68 (10), pp.4925-4932. ⟨10.1109/TED.2021.3108479⟩

مصطلحات موضوعية: FOS: Computer and information sciences, Computer Science - Machine Learning, Computer science, FOS: Physical sciences, Applied Physics (physics.app-ph), 01 natural sciences, Machine Learning (cs.LG), [SPI]Engineering Sciences [physics], 0103 physical sciences, Electronic engineering, Electrical and Electronic Engineering, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, Artificial neural network, business.industry, Deep learning, Process (computing), Physics - Applied Physics, Electronic, Optical and Magnetic Materials, Resistive random-access memory, Artificial intelligence, business, Reset (computing), MNIST database, Random access, AND gate

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::edcbfdd9a7b73660ad52cf15830ef24e
https://hal.science/hal-03372056/document

المؤلفون: N. Castellani, G. Molas, Marc Bocquet, L. Grenouillet, J-M. Portal, L. Reganaz, Etienne Nowak, T. Magis, C. Carabasse, G. Navarro, D. Deleruyelle, Mathieu Bernard, J. Minguet Lopez

المساهمون: Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), INL - Dispositifs Electroniques (INL - DE), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)

المصدر: 2021 IEEE International Memory Workshop (IMW)
2021 IEEE INTERNATIONAL MEMORY WORKSHOP (IMW)
2021 IEEE INTERNATIONAL MEMORY WORKSHOP (IMW), May 2021, Dresde, Germany. pp.107-110, ⟨10.1109/IMW51353.2021.9439606⟩

مصطلحات موضوعية: OTS, Materials science, business.industry, High density, Threshold voltage, chalcogenide, Stack (abstract data type), Scalability, Optoelectronics, resistive RAM, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Crossbar switch, crossbar, business, Low voltage, Scaling, Voltage

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::94a04afe0bb92138e1c6f390ca2ddb15
https://doi.org/10.1109/imw51353.2021.9439606

المؤلفون: Luca Perniola, Piero Olivo, Etienne Nowak, Elisa Vianello, Alessandro Grossi, Pablo Royer, Jean-Philippe Noel, Cristian Zambelli, Bastien Giraud

المصدر: IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 26:2599-2607

مصطلحات موضوعية: Cams, Characterization, Dispersion, Electrodes, HfO₂, RRAM, HfO2, deposition, variability, process, reliability, performance, Computer science, Characterization, Reliability (computer networking), 02 engineering and technology, RRAM, deposition, 01 natural sciences, HfO₂, NO, Set (abstract data type), 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, process, Static random-access memory, Electrical and Electronic Engineering, Cams, Electrodes, HfO2, 010302 applied physics, Random access memory, reliability, Hardware_MEMORYSTRUCTURES, variability, 020208 electrical & electronic engineering, Dispersion, Content-addressable memory, Resistive random-access memory, Hardware and Architecture, Logic gate, Reset (computing), performance, Software, Random access

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::51de9faa3752b8856681f0bccc8f8287
https://doi.org/10.1109/tvlsi.2018.2805470

المؤلفون: J. Garrione, Marie-Claire Cyrille, Nicolas Bernier, G. Lama, N. Castellani, Gabriele Navarro, Emmanuel Nolot, Etienne Nowak, Mathieu Bernard, Guillaume Bourgeois

المساهمون: CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information, European Project: 783176,WAKeMeUp

المصدر: IRPS 2021-2021 IEEE International Reliability Physics Symposium
IRPS 2021-2021 IEEE International Reliability Physics Symposium, Mar 2021, Monterey, United States. pp.1-6, ⟨10.1109/IRPS46558.2021.9405116⟩
IRPS
2021 IEEE International Reliability Physics Symposium (IRPS)

مصطلحات موضوعية: 010302 applied physics, multilevel I, Materials science, Doping, Si-doping, 02 engineering and technology, GeSbTe, Multilevel programming, 021001 nanoscience & nanotechnology, 01 natural sciences, SCM, chemistry.chemical_compound, [SPI]Engineering Sciences [physics], Reliability (semiconductor), chemistry, PCM, 0103 physical sciences, Electronic engineering, Data retention, 0210 nano-technology, Storage class memory, Protocol (object-oriented programming), Volatile memory

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0536207a1fd4b18652fc5be16bd08df3
https://cea.hal.science/cea-03331482

المؤلفون: Gauthier Lefevre, C. Sabbione, Sylvain David, Etienne Nowak, J. Garrione, N. Castellani, Marie-Claire Cyrille, Anna Lisa Serra, Nicolas Bernier, Christophe Vallée, Guillaume Bourgeois, Gabriele Navarro, Mathieu Bernard, O. Cueto, Christelle Charpin-Nicolle

المساهمون: CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information, Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), European Project: 783176,WAKeMeUp

المصدر: IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2021, 68 (2), pp.535-540. ⟨10.1109/TED.2020.3044267⟩
IEEE Transactions on Electron Devices, 2021, 68 (2), pp.535-540. ⟨10.1109/TED.2020.3044267⟩

مصطلحات موضوعية: 010302 applied physics, business.industry, GeSbTe, Thermal confinement, 01 natural sciences, Electronic, Optical and Magnetic Materials, Power (physics), Phase-change memory, chemistry.chemical_compound, [SPI]Engineering Sciences [physics], Low power Phase-Change Memory, Stack (abstract data type), chemistry, 0103 physical sciences, Thermal, Optoelectronics, Electro-thermal simulations, Electrical and Electronic Engineering, business, Current density, Scaling, Lithography

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a85ded2bac29098bfe311f43f120a78b
https://hal-cea.archives-ouvertes.fr/cea-03119677/document