المؤلفون: Jianqing Wen, Evans-Freeman, J., Peaker, A.R., Zhang, J.P., Hemment, P.L.F., Marsh, C.D., Booker, G.R.

المصدر: Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503) Electron devices meeting - Hong Kong Electron Devices Meeting, 2000. Proceedings. 2000 IEEE Hong Kong. :112-115 2000

Relation: Proceedings 2000 IEEE Hong Kong Electron Devices Meeting

المؤلفون: Emiroglu, D., Evans-Freeman, J., Kappers, M. J., McAleese, C., Humphreys, C. J.

المصدر: 2008 Conference on Optoelectronic and Microelectronic Materials and Devices Optoelectronic and Microelectronic Materials and Devices, 2008. COMMAD 2008. Conference on. :30-33 Jul, 2008

Relation: 2008 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD)

المؤلفون: Mitromara, N., Evans-Freeman, J. H., Duffy, R.

المصدر: 2008 Conference on Optoelectronic and Microelectronic Materials and Devices Optoelectronic and Microelectronic Materials and Devices, 2008. COMMAD 2008. Conference on. :132-135 Jul, 2008

Relation: 2008 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD)

المؤلفون: Suryajaya, Nabok, A., Davis, F., Hassan, A., Higson, S. P. J., Evans-Freeman, J.

مصطلحات موضوعية: Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Soft Condensed Matter

URL الوصول: http://arxiv.org/abs/cond-mat/0604249

المؤلفون: Suryajaya, Nabok, A., Davis, F., Hassan, A., Higson, S.P.J., Evans-Freeman, J.

المصدر: In Applied Surface Science 2008 254(15):4891-4898

المؤلفون: Evans-Freeman, J. H., Emiroglu, D., Gad, M. A., Mitromara, N., Vernon-Parry, K. D.

المصدر: Journal of Materials Science. February 2006 41(3):1007-1012

المؤلفون: Evans-Freeman, J. H., Naveed, A. T., Huda, M. Q., Peaker, A. R., Houghton, D. C., Wright, A. C.

المصدر: MRS Online Proceedings Library. 533(1):133-138

المؤلفون: Hayama, S. ^*, Davies, G., Tan, J., Markevich, V.P., Peaker, A.R., Evans-Freeman, J., Vernon-Parry, K.D., Abrosimov, N.V.

المصدر: In Physica B: Physics of Condensed Matter 31 December 2003 340-342:823-826

المؤلفون: Boudjelida, B., Gee, I., Evans-Freeman, J., Clark, S. A., Maffeis, T. G. G., Teng, K. S., Wilks, S., Azize, M., Bethoux, J.-M., De Mierry, P.

المصدر: Journal of Applied Physics; Mar2008, Vol. 103 Issue 5, p053708, 6p, 2 Charts, 8 Graphs

مصطلحات موضوعية: NICKEL compounds, ALUMINUM compounds, GALLIUM compounds, PHOTOELECTRON spectroscopy, ELECTRONICS

المؤلفون: Abdelgader, N., Evans-Freeman, J. H.

المصدر: Journal of Applied Physics; 5/1/2003, Vol. 93 Issue 9, p5118, 7p, 2 Charts, 6 Graphs

مصطلحات موضوعية: SILICON, ION implantation