المؤلفون: Hsien-Chin Chiu, Chia-Hao Liu, Yi-Sheng Chang, Hsuan-Ling Kao, Rong Xuan, Chih-Wei Hu, Feng-Tso Chien

المصدر: IEEE Journal of the Electron Devices Society, Vol 7, Pp 984-989 (2019)

مصطلحات موضوعية: Microwave annealing, normally off, p-GaN gate HEMT, dynamic behavior, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/8843935/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/000590ccc47540fb9f603b6e97df1298

المؤلفون: Feng-Tso Chien, Yu-Wei Chang, Jo-Chin Liu

المصدر: Membranes, Vol 12, Iss 4, p 411 (2022)

مصطلحات موضوعية: n/a, Chemical technology, TP1-1185, Chemical engineering, TP155-156

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2077-0375/12/4/411; https://doaj.org/toc/2077-0375

URL الوصول: https://doaj.org/article/bc2b072fc56f46a08b282d34d7e83837

المؤلفون: Xinke Liu, Hsien-Chin Chiu, Hou-Yu Wang, Cong Hu, Hsiang-Chun Wang, Hsuan-Ling Kao, Feng-Tso Chien

المصدر: IEEE Journal of the Electron Devices Society, Vol 6, Pp 825-829 (2018)

مصطلحات موضوعية: Free standing gallium nitride (GaN), power p-n diode, high breakdown voltage, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/8417418/; https://doaj.org/toc/2168-6734

URL الوصول: https://doaj.org/article/885228ade1b04a168d4c5b585890d0a2

المؤلفون: Hsien-Chin Chiu, Chia-Hao Liu, Chong-Rong Huang, Chi-Chuan Chiu, Hsiang-Chun Wang, Hsuan-Ling Kao, Shinn-Yn Lin, Feng-Tso Chien

المصدر: Membranes, Vol 11, Iss 10, p 727 (2021)

مصطلحات موضوعية: p-GaN E-mode HEMT, normally-off, gate insulator, lifetime, reliability, Chemical technology, TP1-1185, Chemical engineering, TP155-156

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2077-0375/11/10/727; https://doaj.org/toc/2077-0375

URL الوصول: https://doaj.org/article/cde577e1978b498689bb27dddd3f8e06

المؤلفون: Feng-Tso Chien, Jing Ye, Wei-Cheng Yen, Chii-Wen Chen, Cheng-Li Lin, Yao-Tsung Tsai

المصدر: Membranes, Vol 11, Iss 2, p 103 (2021)

مصطلحات موضوعية: raised source/drain (RSD), lightly doped drain (LDD), thin film transistor (TFT), kink effect, Chemical technology, TP1-1185, Chemical engineering, TP155-156

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2077-0375/11/2/103; https://doaj.org/toc/2077-0375

URL الوصول: https://doaj.org/article/06888b719a3c43df9098e9e7446fbc40

المؤلفون: Feng-Tso Chien, Zhi-Zhe Wang, Cheng-Li Lin, Tsung-Kuei Kang, Chii-Wen Chen, Hsien-Chin Chiu

المصدر: Micromachines, Vol 11, Iss 5, p 504 (2020)

مصطلحات موضوعية: split-gate trench power MOSFET, multiple epitaxial layers, specific on-resistance, Mechanical engineering and machinery, TJ1-1570

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2072-666X/11/5/504; https://doaj.org/toc/2072-666X

URL الوصول: https://doaj.org/article/c1f16233e61b4e2a9b2e97ab8cf71aca

المؤلفون: Hsiang-Chun Wang, Hsien-Chin Chiu, Chong-Rong Huang, Hsuan-Ling Kao, Feng-Tso Chien

المصدر: Energies, Vol 13, Iss 10, p 2479 (2020)

مصطلحات موضوعية: normally off, MISHEMT, MOCVD-regrowth, leakage current, dynamic RON, Technology

وصف الملف: electronic resource

Relation: https://www.mdpi.com/1996-1073/13/10/2479; https://doaj.org/toc/1996-1073

URL الوصول: https://doaj.org/article/b135c85cc143452fa0e2d1988805d04a

المؤلفون: Hsien-Chin Chiu, Feng-Tso Chien, Shih-Cheng Yang, Yi-Jen Chan

المصدر: 2001 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium (IEEE Cat. No.01CH37173) Radio frequency integrated circuits Radio Frequency Integrated Circuits (RFIC) Symposium, 2001. Digest of Papers. 2001 IEEE. :143-146 2001

Relation: 2001 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium

المؤلفون: Shih-Cheng Yang, Chin-Wei Kuo, Feng-Tso Chien, Yi-Jen Chan

المصدر: Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) Indium phosphide and related materials Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On. :204-207 2001

Relation: Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM

المؤلفون: Feng-Tso Chien, Yi-Jen Chan

المصدر: Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) Indium phosphide and related materials Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on. :107-110 1999

Relation: Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99)