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1دورية أكاديمية
المؤلفون: Stefan Mönch, Michael Basler, Richard Reiner, Fouad Benkhelifa, Philipp Döring, Matthias Sinnwell, Stefan Müller, Michael Mikulla, Patrick Waltereit, Rüdiger Quay
المصدر: e-Prime: Advances in Electrical Engineering, Electronics and Energy, Vol 4, Iss , Pp 100171- (2023)
مصطلحات موضوعية: Gallium nitride, Substrates, Power integrated circuits, HEMTs, Half-bridges, Power converters, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
وصف الملف: electronic resource
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2دورية أكاديمية
المؤلفون: Stefan Mönch, Richard Reiner, Michael Basler, Daniel Grieshaber, Fouad Benkhelifa, Patrick Waltereit, Rüdiger Quay
المصدر: Sensors, Vol 23, Iss 14, p 6512 (2023)
مصطلحات موضوعية: current measurement, power integrated circuits, gallium nitride, HEMTs, AC motor drives, three-phase DC–AC inverters, Chemical technology, TP1-1185
وصف الملف: electronic resource
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3دورية أكاديمية
المؤلفون: Michael Basler, Richard Reiner, Stefan Moench, Fouad Benkhelifa, Philipp Doring, Patrick Waltereit, Rudiger Quay, Oliver Ambacher
المصدر: IEEE Access, Vol 9, Pp 163122-163137 (2021)
مصطلحات موضوعية: Gallium nitride, integrated circuit technology, power integrated circuits, logic circuits, analog circuits, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
وصف الملف: electronic resource
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4دورية أكاديمية
المؤلفون: Jürgen Weippert, Philipp Reinke, Fouad Benkhelifa, Heiko Czap, Christian Giese, Lutz Kirste, Patrik Straňák, Jan Kustermann, Jan Engels, Vadim Lebedev
المصدر: Crystals, Vol 12, Iss 11, p 1626 (2022)
مصطلحات موضوعية: diamond, heteroepitaxy, diodes, power electronics, CVD, Crystallography, QD901-999
وصف الملف: electronic resource
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5دورية أكاديمية
المؤلفون: Thomas Gerrer, Heiko Czap, Thomas Maier, Fouad Benkhelifa, Stefan Müller, Christoph E. Nebel, Patrick Waltereit, Rüdiger Quay, Volker Cimalla
المصدر: AIP Advances, Vol 10, Iss 2, Pp 029902-029902-1 (2020)
وصف الملف: electronic resource
Relation: https://doaj.org/toc/2158-3226
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6دورية أكاديمية
المؤلفون: Thomas Gerrer, Heiko Czap, Thomas Maier, Fouad Benkhelifa, Stefan Müller, Christoph E. Nebel, Patrick Waltereit, Rüdiger Quay, Volker Cimalla
المصدر: AIP Advances, Vol 9, Iss 12, Pp 125106-125106-6 (2019)
وصف الملف: electronic resource
Relation: https://doaj.org/toc/2158-3226
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المؤلفون: Richard Reiner, Thomas Kaden, Fouad Benkhelifa, Rudiger Quay, Sebastian Mansfeld, Ingmar Kallfass, Dirk Meder, Jan Huckelheim, M. Zink, Stefan Noll, Patrick Waltereit, Stefan Moench, Nicola Mingirulli
المساهمون: Publica
المصدر: IEEE Transactions on Power Electronics. 36:83-86
مصطلحات موضوعية: driver circuits, Materials science, printed circuits, Hardware_PERFORMANCEANDRELIABILITY, 02 engineering and technology, Integrated circuit, law.invention, Printed circuit board, law, Hardware_INTEGRATEDCIRCUITS, 0202 electrical engineering, electronic engineering, information engineering, Gate driver, Parasitic extraction, Electrical and Electronic Engineering, business.industry, 020208 electrical & electronic engineering, Transistor, bridge circuits, Capacitor, Logic gate, multichip modules, Optoelectronics, gallium nitride, business, power integrated circuits, semiconductor device packaging, AND gate, Hardware_LOGICDESIGN
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2886ef3570486d000269a285cf56fed7
https://doi.org/10.1109/tpel.2020.3005621
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8
المؤلفون: Tarik Moudakir, Suresh Sundaram, Paul L. Voss, Simon Gautier, Phuong Vuong, Stefano Leone, Fouad Benkhelifa, Jean-Paul Salvestrini, Adama Mballo, Abdallah Ougazzaden, Gilles Patriarche, Soufiane Karrakchou
المساهمون: Georgia Tech Lorraine [Metz], Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté [COMUE] (UBFC)-Université Bourgogne Franche-Comté [COMUE] (UBFC)-Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-Georgia Institute of Technology [Atlanta]-CentraleSupélec-Ecole Nationale Supérieure des Arts et Metiers Metz-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Fraunhofer Institute for Applied Solid State Physics (Fraunhofer IAF), Fraunhofer (Fraunhofer-Gesellschaft), ANR Labex Ganex, ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011)
المصدر: ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces, Washington, D.C. : American Chemical Society, 2020, 12 (49), pp.55460-55466. ⟨10.1021/acsami.0c16850⟩مصطلحات موضوعية: Materials science, mechanical transfer, Diffusion, semiconductors, 02 engineering and technology, High-electron-mobility transistor, 010402 general chemistry, 01 natural sciences, flexible (opto) electronics, transferrable nanodevices, [SPI.MECA.MEMA]Engineering Sciences [physics]/Mechanics [physics.med-ph]/Mechanics of materials [physics.class-ph], General Materials Science, 2D boron nitride, business.industry, Delamination, Heterojunction, Adhesion, III-nitrides, 021001 nanoscience & nanotechnology, [SPI.TRON]Engineering Sciences [physics]/Electronics, 0104 chemical sciences, Semiconductor, Sapphire, Optoelectronics, 0210 nano-technology, business, Layer (electronics)
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المؤلفون: Heiko Czap, Volker Cimalla, Oliver Ambacher, Lucas Pinti, Philipp Reinke, Lutz Kirste, Fouad Benkhelifa, Christoph E. Nebel, Verena Zürbig
المساهمون: Publica
مصطلحات موضوعية: Materials science, lambert W-function, Physics - Instrumentation and Detectors, Schottky barrier, schottky diodes, Power Semiconductor Devices, FOS: Physical sciences, Thermionic emission, Substrate (electronics), Applied Physics (physics.app-ph), engineering.material, 01 natural sciences, diamond, 0103 physical sciences, Figure of merit, Breakdown voltage, Electrical and Electronic Engineering, Diode, 010302 applied physics, Condensed Matter - Materials Science, Condensed matter physics, baliga figure of merit (BFOM), Schottky diode, Diamond, Materials Science (cond-mat.mtrl-sci), Instrumentation and Detectors (physics.ins-det), Physics - Applied Physics, Electronic, Optical and Magnetic Materials, power electronics, engineering
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::887973008fbd677d2dd3743f54d68c31
http://arxiv.org/abs/2005.12591 -
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المؤلفون: Matteo Bosi, Vladimir Polyakov, Stefano Leone, Vincenzo Montedoro, Fouad Benkhelifa, Mario Prescher, Philipp Doering, Lutz Kirste, Christian Manz, Roberto Fornari, Oliver Ambacher
المساهمون: Publica
المصدر: Journal of crystal growth 534 (2020): 125511-1. doi:10.1016/j.jcrysgro.2020.125511
info:cnr-pdr/source/autori:Stefano Leone; Roberto Fornari; Matteo Bosi; Vincenzo Montedoro; Lutz Kirste; Philipp Doering; Fouad Benkhelifa; Mario Prescher; Christian Manz; Vladimir Polyakov; Oliver Ambacher/titolo:Epitaxial Growth of GaN%2FGa2O3 and Ga2O3%2FGaN Heterostructures for Novel High Electron Mobility Transistors/doi:10.1016%2Fj.jcrysgro.2020.125511/rivista:Journal of crystal growth/anno:2020/pagina_da:125511-1/pagina_a:/intervallo_pagine:125511-1/volume:534مصطلحات موضوعية: nitrides, Materials science, A3.Chemical vapor deposition processes, chemical vapor deposition processes, 02 engineering and technology, High-electron-mobility transistor, Chemical vapor deposition, Epitaxy, 01 natural sciences, semicounducting gallium compounds, Inorganic Chemistry, Crystal, 0103 physical sciences, Materials Chemistry, Sheet resistance, 010302 applied physics, B1.Gallium compounds, B1.Nitrides, business.industry, B3.High electron mobility transistors, Heterojunction, 021001 nanoscience & nanotechnology, Condensed Matter Physics, high electron mobility transistors, Sapphire, Optoelectronics, gallium compounds, 0210 nano-technology, business, Layer (electronics), B2.Semiconducting gallium compounds
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ba3362caea2231c1c733dbc021b30c9b
https://publica.fraunhofer.de/handle/publica/261209
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