يعرض 1 - 10 نتائج من 60 نتيجة بحث عن '"Frédéric Cayrel"', وقت الاستعلام: 0.93s تنقيح النتائج
  1. 1
    A simple non-recessed and Au-free high quality Ohmic contacts on AlGaN/GaN: The case of Ti/Al alloy

    المؤلفون: Wahid Khalfaoui, Frédéric Cayrel, Emmanuel Collard, Maher Nafouti, Daniel Alquier, Georgio El-zammar, Arnaud Yvon

    المساهمون: GREMAN (matériaux, microélectronique, acoustique et nanotechnologies) (GREMAN - UMR 7347), Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours (UT)-Centre National de la Recherche Scientifique (CNRS), STMicroelectronics [Tours] (ST-TOURS), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours-Centre National de la Recherche Scientifique (CNRS)

    المصدر: Materials Science in Semiconductor Processing
    Materials Science in Semiconductor Processing, Elsevier, 2018, 78, pp.107-110. ⟨10.1016/j.mssp.2017.11.021⟩

    مصطلحات موضوعية: Materials science, Silicon, Annealing (metallurgy), Alloy, Analytical chemistry, chemistry.chemical_element, Algan gan, 02 engineering and technology, engineering.material, 01 natural sciences, Tetragonal crystal system, 0103 physical sciences, General Materials Science, Ohmic contact, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, Mechanical Engineering, Contact resistance, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Phase formation, [PHYS.MECA.ACOU]Physics [physics]/Mechanics [physics]/Acoustics [physics.class-ph], chemistry, Mechanics of Materials, engineering, 0210 nano-technology

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ab68a59218d5c51f6385b148bbbcc3f4
    https://doi.org/10.1016/j.mssp.2017.11.021

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  2. 2
    Porosity and thickness characterization of porous Si and oxidized porous Si layers – An ultraviolet–visible–mid infrared ellipsometry study

    المؤلفون: Emil Agocs, Peter Petrik, Frédéric Cayrel, Daniel Alquier, Miklos Fried, Benjamin Bardet, Thomas Defforge, Bálint Fodor, Gaël Gautier

    المساهمون: GREMAN (matériaux, microélectronique, acoustique et nanotechnologies) (GREMAN - UMR 7347), Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours (UT)-Centre National de la Recherche Scientifique (CNRS), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours-Centre National de la Recherche Scientifique (CNRS)

    المصدر: Microporous and Mesoporous Materials
    Microporous and Mesoporous Materials, Elsevier, 2016, 227, pp.112-120. ⟨10.1016/j.micromeso.2016.02.039⟩

    مصطلحات موضوعية: Materials science, Silicon, Infrared, Infrared ellipsometry, Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, Porous silicon, 01 natural sciences, Monocrystalline silicon, Electrochemical etching, Porous silicon layer, Ellipsometry, Oxidation, 0103 physical sciences, Surface roughness, General Materials Science, Crystalline silicon, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Composite material, Porosity, Measurement of porosity, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, General Chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, chemistry, Mechanics of Materials, 0210 nano-technology

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0777242c8d10cfbcc0ba05386524eee8
    https://doi.org/10.1016/j.micromeso.2016.02.039

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  3. 3
    Two-dimensional dopant profiling of gallium nitride p–n junctions by scanning capacitance microscopy

    المؤلفون: Emmanuel Collard, M. Lamhamdi, Arnaud Yvon, Daniel Alquier, Eric Frayssinet, Yvon Cordier, Anne Elisabeth Bazin, Frédéric Cayrel

    المصدر: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 372:67-71

    مصطلحات موضوعية: 010302 applied physics, Profiling (computer programming), Nuclear and High Energy Physics, Materials science, Dopant, business.industry, Resolution (electron density), Doping, Analytical chemistry, Gallium nitride, 02 engineering and technology, Scanning capacitance microscopy, 021001 nanoscience & nanotechnology, 01 natural sciences, chemistry.chemical_compound, Ion implantation, chemistry, 0103 physical sciences, Optoelectronics, Power semiconductor device, 0210 nano-technology, business, Instrumentation

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::54a2aef96d8636ffbf942b4aeb6d58ff
    https://doi.org/10.1016/j.nimb.2016.01.013

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  4. 4
    DLTS analysis of high resistive edge termination technique-induced defects in GaN-based Schottky barrier diodes

    المؤلفون: Emmanuel Collard, Sodjan Koné, Arnaud Yvon, Frédéric Cayrel, Daniel Alquier

    المصدر: physica status solidi (a). 213:2364-2370

    مصطلحات موضوعية: 010302 applied physics, Resistive touchscreen, Materials science, Deep-level transient spectroscopy, business.industry, Schottky barrier, Schottky diode, 02 engineering and technology, Surfaces and Interfaces, Edge (geometry), 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Ion, Ion implantation, 0103 physical sciences, Materials Chemistry, Optoelectronics, Electrical and Electronic Engineering, 0210 nano-technology, business, Diode

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::ebc3962a1e60016325620a5626bb88c4
    https://doi.org/10.1002/pssa.201532895

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  5. 5
    Fabrication of field-effect transistors and functional nanogenerators using hydrothermally grown ZnO nanowires

    المؤلفون: Charles Opoku, Daniel Alquier, Guylaine Poulin-Vittrant, Nicolas Camara, Abhishek Singh Dahiya, Frédéric Cayrel

    المساهمون: GREMAN (matériaux, microélectronique, acoustique et nanotechnologies) (GREMAN - UMR 7347), Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours (UT)-Centre National de la Recherche Scientifique (CNRS), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours-Centre National de la Recherche Scientifique (CNRS)

    المصدر: RSC Advances
    RSC Advances, Royal Society of Chemistry, 2015, 5 (86), pp.69925-69931. ⟨10.1039/C5RA11450K⟩

    مصطلحات موضوعية: Materials science, Fabrication, Polydimethylsiloxane, business.industry, General Chemical Engineering, Transistor, Nanotechnology, General Chemistry, 7. Clean energy, Piezoelectricity, Hydrothermal circulation, law.invention, [SPI]Engineering Sciences [physics], chemistry.chemical_compound, chemistry, law, Optoelectronics, Field-effect transistor, business, Power density, Voltage

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b71f9e93fe9fd8b0db804a6bbd9f9c50
    https://doi.org/10.1039/c5ra11450k

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  6. 6
    Temperature dependence of charge transport in zinc oxide nanosheet source-gated transistors

    المؤلفون: Damien Valente, Charles Opoku, Guylaine Poulin-Vittrant, Daniel Alquier, Nicolas Camara, Abhishek Singh Dahiya, Frédéric Cayrel

    المساهمون: GREMAN (matériaux, microélectronique, acoustique et nanotechnologies) (GREMAN - UMR 7347), Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours (UT)-Centre National de la Recherche Scientifique (CNRS), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Micro électronique, Composants, Systèmes, Efficacité Energétique (M@CSEE), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours-Centre National de la Recherche Scientifique (CNRS)

    المصدر: Thin Solid Films
    Thin Solid Films, Elsevier, 2016, 617, pp.114-119. ⟨10.1016/j.tsf.2016.02.021⟩

    مصطلحات موضوعية: Materials science, Nanotechnology, 02 engineering and technology, 01 natural sciences, Active load, law.invention, Depletion region, law, 0103 physical sciences, Materials Chemistry, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], Ohmic contact, ComputingMilieux_MISCELLANEOUS, Electronic circuit, Nanosheet, 010302 applied physics, [PHYS]Physics [physics], business.industry, Transistor, Metals and Alloys, Schottky diode, Surfaces and Interfaces, 021001 nanoscience & nanotechnology, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, 0210 nano-technology, business, Voltage

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::180d97837076d72d0071bec9274f77bc
    https://hal.archives-ouvertes.fr/hal-02069635

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  7. 7
    Aluminum Implantation in 4H-SiC: Physical and Electrical Properties

    المؤلفون: Frédéric Cayrel, Emmanuel Collard, Daniel Alquier, Jérôme Biscarrat, Xi Song, Jean-François Michaud

    المصدر: Materials Science Forum. :581-584

    مصطلحات موضوعية: Materials science, Dopant, Mechanical Engineering, Contact resistance, chemistry.chemical_element, Scanning capacitance microscopy, Condensed Matter Physics, chemistry, Mechanics of Materials, Homogeneous, Aluminium, Total dose, General Materials Science, Composite material

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::874a0109f4aa2f7edbf3bde7f3fee239
    https://doi.org/10.4028/www.scientific.net/msf.740-742.581

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  8. 8
    Single-crystalline ZnO sheet Source-Gated Transistors

    المؤلفون: Balasubramaniam Sarvankumar, Frédéric Cayrel, Guylaine Poulin-Vittrant, Radu A. Sporea, Charles Opoku, Daniel Alquier, Nicolas Camara, Abhishek Singh Dahiya

    المساهمون: GREMAN (matériaux, microélectronique, acoustique et nanotechnologies) (GREMAN - UMR 7347), Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours (UT)-Centre National de la Recherche Scientifique (CNRS), University of Surrey (UNIS), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours-Centre National de la Recherche Scientifique (CNRS)

    المصدر: Scientific Reports
    Scientific Reports, Nature Publishing Group, 2016, 6, pp.19232. ⟨10.1038/srep19232⟩

    مصطلحات موضوعية: Fabrication, Materials science, 02 engineering and technology, engineering.material, Bioinformatics, 01 natural sciences, Article, law.invention, law, 0103 physical sciences, Electronics, Ohmic contact, 010302 applied physics, Multidisciplinary, business.industry, Transistor, Schottky diode, 021001 nanoscience & nanotechnology, Amorphous solid, [SPI.TRON]Engineering Sciences [physics]/Electronics, Polycrystalline silicon, engineering, Optoelectronics, 0210 nano-technology, business, Voltage

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::41546bdc2bafdae85c3ca57f5f934569
    https://hal.archives-ouvertes.fr/hal-02077037/document

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  9. 9
    Optimization of VLS Growth Process for 4H-SiC P/N Junctions

    المؤلفون: Christian Brylinski, Mihai Lazar, Gabriel Ferro, Dominique Planson, Davy Carole, Christophe Raynaud, Selsabil Sejil, Frédéric Cayrel

    المساهمون: Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), Laboratoire des Multimatériaux et Interfaces (LMI), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), GREMAN (matériaux, microélectronique, acoustique et nanotechnologies) (GREMAN - UMR 7347), Université de Tours-Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours (UT)-Centre National de la Recherche Scientifique (CNRS)

    المصدر: Materials Science Forum
    Materials Science Forum, Trans Tech Publications Inc., 2016, 858, pp.205-208. ⟨10.4028/www.scientific.net/MSF.858.205⟩

    مصطلحات موضوعية: Morphology (linguistics), Materials science, Hydrogen, Analytical chemistry, chemistry.chemical_element, Nanotechnology, 02 engineering and technology, Substrate (electronics), P-N Junction, Carrier Gas, Epitaxy, 01 natural sciences, 0103 physical sciences, VLS Epitaxy, General Materials Science, [SPI.GPROC]Engineering Sciences [physics]/Chemical and Process Engineering, Vapor–liquid–solid method, Selected Area Epitaxy, Al Doping, 010302 applied physics, Argon, Mechanical Engineering, Doping, 021001 nanoscience & nanotechnology, Condensed Matter Physics, [SPI.TRON]Engineering Sciences [physics]/Electronics, chemistry, Mechanics of Materials, p-Type 4H-SiC, 0210 nano-technology, p–n junction

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::591a984e0151ec6c7bfa6b1013282b11
    https://hal.archives-ouvertes.fr/hal-01388031/file/rev_127_hal.pdf

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  10. 10
    Fabrication Issues of 4H-SiC Static Induction Transistors

    المؤلفون: Antonis Stavrinidis, Maria Kayambaki, Zhuo Gao, Konstantinos Zekentes, George Konstantinidis, Daniel Alquier, Frédéric Cayrel

    المصدر: Materials Science Forum. :1049-1052

    مصطلحات موضوعية: Fabrication, Materials science, business.industry, Mechanical Engineering, Transistor, Electrical engineering, Condensed Matter Physics, law.invention, Mechanics of Materials, law, Optoelectronics, General Materials Science, Rapid thermal annealing, Photolithography, business, Ohmic contact, Voltage, Leakage (electronics), Static induction transistor

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::263caf44a96b2a0e48b112ea4bb0dd79
    https://doi.org/10.4028/www.scientific.net/msf.717-720.1049

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