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1
المؤلفون: Wahid Khalfaoui, Frédéric Cayrel, Emmanuel Collard, Maher Nafouti, Daniel Alquier, Georgio El-zammar, Arnaud Yvon
المساهمون: GREMAN (matériaux, microélectronique, acoustique et nanotechnologies) (GREMAN - UMR 7347), Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours (UT)-Centre National de la Recherche Scientifique (CNRS), STMicroelectronics [Tours] (ST-TOURS), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours-Centre National de la Recherche Scientifique (CNRS)
المصدر: Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing, Elsevier, 2018, 78, pp.107-110. ⟨10.1016/j.mssp.2017.11.021⟩مصطلحات موضوعية: Materials science, Silicon, Annealing (metallurgy), Alloy, Analytical chemistry, chemistry.chemical_element, Algan gan, 02 engineering and technology, engineering.material, 01 natural sciences, Tetragonal crystal system, 0103 physical sciences, General Materials Science, Ohmic contact, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, Mechanical Engineering, Contact resistance, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Phase formation, [PHYS.MECA.ACOU]Physics [physics]/Mechanics [physics]/Acoustics [physics.class-ph], chemistry, Mechanics of Materials, engineering, 0210 nano-technology
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2
المؤلفون: Emil Agocs, Peter Petrik, Frédéric Cayrel, Daniel Alquier, Miklos Fried, Benjamin Bardet, Thomas Defforge, Bálint Fodor, Gaël Gautier
المساهمون: GREMAN (matériaux, microélectronique, acoustique et nanotechnologies) (GREMAN - UMR 7347), Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours (UT)-Centre National de la Recherche Scientifique (CNRS), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours-Centre National de la Recherche Scientifique (CNRS)
المصدر: Microporous and Mesoporous Materials
Microporous and Mesoporous Materials, Elsevier, 2016, 227, pp.112-120. ⟨10.1016/j.micromeso.2016.02.039⟩مصطلحات موضوعية: Materials science, Silicon, Infrared, Infrared ellipsometry, Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, Porous silicon, 01 natural sciences, Monocrystalline silicon, Electrochemical etching, Porous silicon layer, Ellipsometry, Oxidation, 0103 physical sciences, Surface roughness, General Materials Science, Crystalline silicon, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Composite material, Porosity, Measurement of porosity, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, General Chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, chemistry, Mechanics of Materials, 0210 nano-technology
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3Two-dimensional dopant profiling of gallium nitride p–n junctions by scanning capacitance microscopy
المؤلفون: Emmanuel Collard, M. Lamhamdi, Arnaud Yvon, Daniel Alquier, Eric Frayssinet, Yvon Cordier, Anne Elisabeth Bazin, Frédéric Cayrel
المصدر: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 372:67-71
مصطلحات موضوعية: 010302 applied physics, Profiling (computer programming), Nuclear and High Energy Physics, Materials science, Dopant, business.industry, Resolution (electron density), Doping, Analytical chemistry, Gallium nitride, 02 engineering and technology, Scanning capacitance microscopy, 021001 nanoscience & nanotechnology, 01 natural sciences, chemistry.chemical_compound, Ion implantation, chemistry, 0103 physical sciences, Optoelectronics, Power semiconductor device, 0210 nano-technology, business, Instrumentation
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المؤلفون: Emmanuel Collard, Sodjan Koné, Arnaud Yvon, Frédéric Cayrel, Daniel Alquier
المصدر: physica status solidi (a). 213:2364-2370
مصطلحات موضوعية: 010302 applied physics, Resistive touchscreen, Materials science, Deep-level transient spectroscopy, business.industry, Schottky barrier, Schottky diode, 02 engineering and technology, Surfaces and Interfaces, Edge (geometry), 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, Ion, Ion implantation, 0103 physical sciences, Materials Chemistry, Optoelectronics, Electrical and Electronic Engineering, 0210 nano-technology, business, Diode
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المؤلفون: Charles Opoku, Daniel Alquier, Guylaine Poulin-Vittrant, Nicolas Camara, Abhishek Singh Dahiya, Frédéric Cayrel
المساهمون: GREMAN (matériaux, microélectronique, acoustique et nanotechnologies) (GREMAN - UMR 7347), Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours (UT)-Centre National de la Recherche Scientifique (CNRS), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours-Centre National de la Recherche Scientifique (CNRS)
المصدر: RSC Advances
RSC Advances, Royal Society of Chemistry, 2015, 5 (86), pp.69925-69931. ⟨10.1039/C5RA11450K⟩مصطلحات موضوعية: Materials science, Fabrication, Polydimethylsiloxane, business.industry, General Chemical Engineering, Transistor, Nanotechnology, General Chemistry, 7. Clean energy, Piezoelectricity, Hydrothermal circulation, law.invention, [SPI]Engineering Sciences [physics], chemistry.chemical_compound, chemistry, law, Optoelectronics, Field-effect transistor, business, Power density, Voltage
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b71f9e93fe9fd8b0db804a6bbd9f9c50
https://doi.org/10.1039/c5ra11450k -
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المؤلفون: Damien Valente, Charles Opoku, Guylaine Poulin-Vittrant, Daniel Alquier, Nicolas Camara, Abhishek Singh Dahiya, Frédéric Cayrel
المساهمون: GREMAN (matériaux, microélectronique, acoustique et nanotechnologies) (GREMAN - UMR 7347), Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours (UT)-Centre National de la Recherche Scientifique (CNRS), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Micro électronique, Composants, Systèmes, Efficacité Energétique (M@CSEE), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours-Centre National de la Recherche Scientifique (CNRS)
المصدر: Thin Solid Films
Thin Solid Films, Elsevier, 2016, 617, pp.114-119. ⟨10.1016/j.tsf.2016.02.021⟩مصطلحات موضوعية: Materials science, Nanotechnology, 02 engineering and technology, 01 natural sciences, Active load, law.invention, Depletion region, law, 0103 physical sciences, Materials Chemistry, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], Ohmic contact, ComputingMilieux_MISCELLANEOUS, Electronic circuit, Nanosheet, 010302 applied physics, [PHYS]Physics [physics], business.industry, Transistor, Metals and Alloys, Schottky diode, Surfaces and Interfaces, 021001 nanoscience & nanotechnology, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Optoelectronics, 0210 nano-technology, business, Voltage
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المؤلفون: Frédéric Cayrel, Emmanuel Collard, Daniel Alquier, Jérôme Biscarrat, Xi Song, Jean-François Michaud
المصدر: Materials Science Forum. :581-584
مصطلحات موضوعية: Materials science, Dopant, Mechanical Engineering, Contact resistance, chemistry.chemical_element, Scanning capacitance microscopy, Condensed Matter Physics, chemistry, Mechanics of Materials, Homogeneous, Aluminium, Total dose, General Materials Science, Composite material
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::874a0109f4aa2f7edbf3bde7f3fee239
https://doi.org/10.4028/www.scientific.net/msf.740-742.581 -
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المؤلفون: Balasubramaniam Sarvankumar, Frédéric Cayrel, Guylaine Poulin-Vittrant, Radu A. Sporea, Charles Opoku, Daniel Alquier, Nicolas Camara, Abhishek Singh Dahiya
المساهمون: GREMAN (matériaux, microélectronique, acoustique et nanotechnologies) (GREMAN - UMR 7347), Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours (UT)-Centre National de la Recherche Scientifique (CNRS), University of Surrey (UNIS), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours-Centre National de la Recherche Scientifique (CNRS)
المصدر: Scientific Reports
Scientific Reports, Nature Publishing Group, 2016, 6, pp.19232. ⟨10.1038/srep19232⟩مصطلحات موضوعية: Fabrication, Materials science, 02 engineering and technology, engineering.material, Bioinformatics, 01 natural sciences, Article, law.invention, law, 0103 physical sciences, Electronics, Ohmic contact, 010302 applied physics, Multidisciplinary, business.industry, Transistor, Schottky diode, 021001 nanoscience & nanotechnology, Amorphous solid, [SPI.TRON]Engineering Sciences [physics]/Electronics, Polycrystalline silicon, engineering, Optoelectronics, 0210 nano-technology, business, Voltage
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المؤلفون: Christian Brylinski, Mihai Lazar, Gabriel Ferro, Dominique Planson, Davy Carole, Christophe Raynaud, Selsabil Sejil, Frédéric Cayrel
المساهمون: Ampère, Département Energie Electrique (EE), Ampère (AMPERE), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), Laboratoire des Multimatériaux et Interfaces (LMI), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), GREMAN (matériaux, microélectronique, acoustique et nanotechnologies) (GREMAN - UMR 7347), Université de Tours-Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE)-École Centrale de Lyon (ECL), Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de Recherche pour l’Agriculture, l’Alimentation et l’Environnement (INRAE), Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours (UT)-Centre National de la Recherche Scientifique (CNRS)
المصدر: Materials Science Forum
Materials Science Forum, Trans Tech Publications Inc., 2016, 858, pp.205-208. ⟨10.4028/www.scientific.net/MSF.858.205⟩مصطلحات موضوعية: Morphology (linguistics), Materials science, Hydrogen, Analytical chemistry, chemistry.chemical_element, Nanotechnology, 02 engineering and technology, Substrate (electronics), P-N Junction, Carrier Gas, Epitaxy, 01 natural sciences, 0103 physical sciences, VLS Epitaxy, General Materials Science, [SPI.GPROC]Engineering Sciences [physics]/Chemical and Process Engineering, Vapor–liquid–solid method, Selected Area Epitaxy, Al Doping, 010302 applied physics, Argon, Mechanical Engineering, Doping, 021001 nanoscience & nanotechnology, Condensed Matter Physics, [SPI.TRON]Engineering Sciences [physics]/Electronics, chemistry, Mechanics of Materials, p-Type 4H-SiC, 0210 nano-technology, p–n junction
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المؤلفون: Antonis Stavrinidis, Maria Kayambaki, Zhuo Gao, Konstantinos Zekentes, George Konstantinidis, Daniel Alquier, Frédéric Cayrel
المصدر: Materials Science Forum. :1049-1052
مصطلحات موضوعية: Fabrication, Materials science, business.industry, Mechanical Engineering, Transistor, Electrical engineering, Condensed Matter Physics, law.invention, Mechanics of Materials, law, Optoelectronics, General Materials Science, Rapid thermal annealing, Photolithography, business, Ohmic contact, Voltage, Leakage (electronics), Static induction transistor
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::263caf44a96b2a0e48b112ea4bb0dd79
https://doi.org/10.4028/www.scientific.net/msf.717-720.1049