يعرض 1 - 10 نتائج من 89 نتيجة بحث عن '"G. Ammendola"', وقت الاستعلام: 1.79s تنقيح النتائج
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    المساهمون: M. P., Lisitskii, G., Ammendola, D. V., Balashov, A., Barone, R., Cristiano, E., Esposito, L., Frunzio, V. N., Gubankov, C., Nappi, S., Pagano, Parlato, Loredana, Peluso, Giuseppe, Pepe, GIOVANNI PIERO

    المصدر: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 444:476-479

    وصف الملف: STAMPA

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    المصدر: I.E.E.E. transactions on electron devices 54 (2007): 1376–1383. doi:10.1109/TED.2007.895868
    info:cnr-pdr/source/autori:Gerardi C.; Ancarani V.; Portoghese R.; Giuffrida S.; Bileci M.; Bimbo G.; Brafa O.; Mello D.; Ammendola G.; Tripiciano E.; Puglisi, R.; Lombardo S./titolo:Nanocrystal memory cell integration in a stand-alone 16-Mb NOR flash device/doi:10.1109%2FTED.2007.895868/rivista:I.E.E.E. transactions on electron devices/anno:2007/pagina_da:1376/pagina_a:1383/intervallo_pagine:1376–1383/volume:54

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    المصدر: IEEE transactions on device and materials reliability 4 (2004): 377–389. doi:10.1109/TDMR.2004.837209
    info:cnr-pdr/source/autori:De Salvo B.; Gerardi C.; van Schaijk R.; Lombardo S.; Corso D.; Plantamura C.; Serafino S.; Ammendola G.; van Duuren M.; Goarin P.; Mei W.Y.; van der Jeugd K.; Baron T.; Gely M.; Mur P.; Deleonibus S./titolo:Performance and reliability features of advanced nonvolatile memories based on discrete traps (silicon nanocrystals, SONOS)/doi:10.1109%2FTDMR.2004.837209/rivista:IEEE transactions on device and materials reliability/anno:2004/pagina_da:377/pagina_a:389/intervallo_pagine:377–389/volume:4

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    المساهمون: Crupi, I., Corso, D., Lombardo, S., Gerardi, C., Ammendola, G., Nicotra, G., Spinella, C., Rimini, E., Melanotte, M.

    المصدر: Materials science & engineering. C, Biomimetic materials, sensors and systems
    23 (2003): 33–36. doi:10.1016/S0928-4931(02)00229-1
    info:cnr-pdr/source/autori:Crupi I, Corso D, Lombardo S, Gerardi C, Ammendola G, Nicotra G, Spinella C, Rimini E, Melanotte M/titolo:Memory effects in MOS devices based on Si quantum dots/doi:10.1016%2FS0928-4931(02)00229-1/rivista:Materials science & engineering. C, Biomimetic materials, sensors and systems (Print)/anno:2003/pagina_da:33/pagina_a:36/intervallo_pagine:33–36/volume:23
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