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1دورية أكاديمية
المؤلفون: Lee, F.-M., Tsai, C.-L., Hu, C.-W., Huang, K.-F., Wu, M.-C., Ko, S.-C.
المصدر: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 28(2):120-122 Feb, 2007
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2Patent
المساهمون: Friedman, Daniel [Lakewood, CO]
وصف الملف: Medium: ED
URL الوصول: http://www.osti.gov/scitech/servlets/purl/873957
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المؤلفون: Petko Vitanov, M. Milanova, Carlos Barthou, B. Arnaudov, B. Clerjaud, E. Goranova, G. Koleva, S. Evtimova, Roumen Kakanakov
المساهمون: Central Laboratory of Applied Physics, Central Laboratory of Solar Energy and New Energy Sources (CL SENES), Bulgarian Academy of Sciences (BAS), Софийски университет = Sofia University, Institut des Nanosciences de Paris (INSP), Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS), University of Sofia
المصدر: Energy Procedia
Energy Procedia, 2010, Energy Procedia, 2 (1), pp.165-168. ⟨10.1016/j.egypro.2010.07.023⟩
Energy Procedia, Elsevier, 2010, Energy Procedia, 2 (1), pp.165-168. ⟨10.1016/j.egypro.2010.07.023⟩مصطلحات موضوعية: Materials science, Photoluminescence, Absorption spectroscopy, liquid phase epitaxy, Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, Nitride, Epitaxy, 01 natural sciences, 7. Clean energy, Energy(all), Photovoltaics, photoluminiscence, 0103 physical sciences, GaAsN, [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], GaInAsN, 010302 applied physics, business.industry, Heterojunction, 021001 nanoscience & nanotechnology, Nitrogen, chemistry, Optoelectronics, Crystallite, 0210 nano-technology, business
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المؤلفون: Kudrawiec, R., Sek, G., Ryczko, K., Misiewicz, J., Sundgren, P., Asplund, C., Hammar, Mattias
المصدر: Solid State Communications. 127(10-sep):613-618
مصطلحات موضوعية: semiconductors, quantum wells, optical properties, high-temperature performance, molecular-beam epitaxy, photoreflectance spectroscopy, laser-diodes, gainasn, gaasn, alloys, absorption, gainnas/, range
وصف الملف: print
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المؤلفون: S. Georgiev, Nicholas J. Ekins-Daukes, M. Milanova, Evgenia Valcheva, K. Kirilov, Diego Alonso-Álvarez, Ivan Gueorguiev Ivanov, V. Donchev, I. Asenova, Krassimir L. Kostov
المصدر: Semiconductor Science and Technology. 32:085005
مصطلحات موضوعية: Technology, SOLAR-CELLS, Analytical chemistry, 02 engineering and technology, Nitride, dilute nitrides, SEMICONDUCTORS, 01 natural sciences, Engineering, RAMAN, GAINASN, Materials Chemistry, Applied Physics, 010302 applied physics, SPECTROSCOPY, Physics, DEFECTS, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Physics, Condensed Matter, Physical Sciences, InGaAsN, symbols, LPE, 0210 nano-technology, Molecular beam epitaxy, Materials science, Photoluminescence, Band gap, Materials Science, microstructure, 0204 Condensed Matter Physics, Materials Science, Multidisciplinary, Condensed Matter::Materials Science, LUMINESCENCE EFFICIENCY, symbols.namesake, X-ray photoelectron spectroscopy, MOLECULAR-BEAM EPITAXY, 0103 physical sciences, local ordering, Electrical and Electronic Engineering, 0912 Materials Engineering, Spectroscopy, Science & Technology, business.industry, GAAS, Engineering, Electrical & Electronic, NITROGEN, Crystallography, Semiconductor, business, Raman spectroscopy
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المؤلفون: P. Ganser, Joachim Wagner, Klaus Köhler, T. Geppert, N. Herres
المساهمون: Publica
المصدر: Journal of Applied Physics. 90:5027-5031
مصطلحات موضوعية: phonon mode, Photon, Chemistry, General Physics and Astronomy, Phononen, Epitaxy, Hot band, Gallium arsenide, Ramanspektroskopie, symbols.namesake, chemistry.chemical_compound, raman spectroscopy, Molecular vibration, symbols, GaAsN, Coherent anti-Stokes Raman spectroscopy, Atomic physics, Raman spectroscopy, GaInAsN, Raman scattering
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7دورية أكاديمية
لا يتم عرض هذه النتيجة على الضيوف.
تسجيل الدخول للوصول الكامل. -
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المؤلفون: Elvio Carlino, Silvia Rubini, C. Nacci, Marina Berti, Faustino Martelli, R. Duca, M. Piccin, S. Modesti, Gabriele Bisognin, P. Schiavuta, A. Cristofoli, A. Franciosi, D. De Salvador, A. V. Drigo, G. Bais
المساهمون: S., Rubini, G., Bai, A., Cristofoli, M., Piccin, R., Duca, C., Nacci, Modesti, Silvio, E., Carlino, F., Martelli, Franciosi, Alfonso, G., Bisognin, D., DE SALVADOR, P., Schiavuta, M., Berti, A. V., Drigo
المصدر: Applied physics letters 88 (2006): 141923. doi:10.1063/1.2193988
info:cnr-pdr/source/autori:Rubini, S; Bais, G; Cristofoli, A; Piccin, M; Duca, R; Nacci, C; Modesti, S; Carlino, E; Martelli, F; Franciosi, A; Bisognin, G; De Salvador, D; Schiavuta, P; Berti, M; Drigo, AV/titolo:Nitrogen-induced hindering of in incorporation in InGaAsN/doi:10.1063%2F1.2193988/rivista:Applied physics letters/anno:2006/pagina_da:141923/pagina_a:/intervallo_pagine:141923/volume:88مصطلحات موضوعية: Materials science, Physics and Astronomy (miscellaneous), Semiconductor materials, Inorganic chemistry, III-V Semiconductors, X-ray diffraction, ALLOY, hydrogenation, chemistry.chemical_element, Crystal growth, Nitrogen, Gallium arsenide, chemistry.chemical_compound, chemistry, Molecular beam epitaxial growth, MOLECULAR-BEAM EPITAXY, GAINASN, Ternary operation, TEMPERATURE, Indium, Molecular beam epitaxy
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c9635fed1c8b3c63b4379d328a465807
https://hdl.handle.net/11368/1696353 -
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المؤلفون: M. Pessa, Tapio T. Rantala, Mihail Dumitrescu, Hannu-Pekka Komsa, E.-M. Pavelescu, J. Wagner
المساهمون: Publica
مصطلحات موضوعية: Materials science, MBE, Band gap, Annealing (metallurgy), Inorganic chemistry, Analytical chemistry, General Physics and Astronomy, chemistry.chemical_element, Crystal growth, Nitrogen, Blueshift, symbols.namesake, Ramanspektroskopie, raman spectroscopy, chemistry, molecular beam epitaxy, X-ray crystallography, III-V Verbindungshalbleiter, symbols, Molekularstrahlepitaxie, Raman spectroscopy, III-V compound semiconductors, GaInAsN, Molecular beam epitaxy
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e3363ee1954b811937b8b069f4db815a
https://publica.fraunhofer.de/handle/publica/207744 -
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المؤلفون: P. Ganser, M. Maier, Joachim Wagner, Klaus Köhler
المساهمون: Publica
مصطلحات موضوعية: Materials science, Physics and Astronomy (miscellaneous), MBE, Analytical chemistry, chemistry.chemical_element, Plasma, InAsN, Epitaxy, Nitrogen, III-V semiconductor, Gallium arsenide, symbols.namesake, chemistry.chemical_compound, chemistry, Molecular beam epitaxial growth, Ellipsometry, molecular beam epitaxy, symbols, Molekularstrahlepitaxie, Spectroscopic ellipsometry, III-V Halbleiter, Raman spectroscopy, GaInAsN
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4749811522ae6b390fbebd3702e423c8
https://publica.fraunhofer.de/handle/publica/208949
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