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1دورية أكاديمية
المؤلفون: Ga Won Yang, Seung Gi Seo, Sungju Choi, Dae Hwan Kim, Sung Hun Jin
المصدر: IEEE Access, Vol 9, Pp 73090-73102 (2021)
مصطلحات موضوعية: MoS₂, field effect transistor, density of state (DOS), bias stress instability, TCAD simulation, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
وصف الملف: electronic resource
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2
المؤلفون: Sungju Choi, Ga Won Yang, Sangwon Lee, Jingyu Park, Changwook Kim, Jun Park, Hyun-Seok Choi, Namhyun Lee, Gang-Jun Kim, Yoon Kim, Myounggon Kang, Changhyun Kim, Jong-Ho Bae, Dae Hwan Kim
المصدر: IEEE Transactions on Electron Devices. 70:48-52
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3
المؤلفون: Sangwon Lee, Jingyu Park, Ga Won Yang, Changwook Kim, Sung-Jin Choi, Dong Myong Kim, Jong-Ho Bae, Dae Hwan Kim
المصدر: IEEE Electron Device Letters. 44:88-91
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4
المؤلفون: Ga-Won Yang, Mi-Ai Kim
المصدر: Journal of Children’s Media & Education. 21:135-164
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::de371d85bbd719fead7db2e9476345a9
https://doi.org/10.21183/kjcm.2022.03.21.1.135