المؤلفون: Pan, Maolin, Wang, Luyu, Wang, Qiang, Zhang, Penghao, Wang, Yuhang, Xu, Min

المصدر: 2023 IEEE 15th International Conference on ASIC (ASICON) ASIC (ASICON), 2023 IEEE 15th International Conference on. :1-4 Oct, 2023

Relation: 2023 IEEE 15th International Conference on ASIC (ASICON)

المؤلفون: Samperi, Katia, Spina, Nunzio, Pennisi, Salvatore, Palmisano, Giuseppe

المصدر: 2023 18th Conference on Ph.D Research in Microelectronics and Electronics (PRIME) Ph.D Research in Microelectronics and Electronics (PRIME), 2023 18th Conference on. :193-196 Jun, 2023

Relation: 2023 18th Conference on Ph.D Research in Microelectronics and Electronics (PRIME)

المؤلفون: Syshchyk, Olga, Cosnier, Thibault, Huang, Zheng-Hong, Cingu, Deepthi, Wellekens, Dirk, Vohra, Anurag, Geens, Karen, Vudumula, Pavan, Chatterjee, Urmimala, Decoutere, Stefaan, Wu, Tian-Li, Bakeroot, Benoit

المصدر: ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC) Solid-State Device Research Conference (ESSDERC), ESSDERC 2022 - IEEE 52nd European. :245-248 Sep, 2022

Relation: ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC)

المؤلفون: Samperi, K., Spina, N., Castorina, A., Pavlin, A., Pennisi, S., Palmisano, G.

المصدر: IEEE Access Access, IEEE. 11:126892-126899 2023

المؤلفون: Katia Samperi, Nunzio Spina, Alessandro Castorina, Antoine Pavlin, Salvatore Pennisi, Giuseppe Palmisano

المصدر: IEEE Access, Vol 11, Pp 126892-126899 (2023)

مصطلحات موضوعية: GaN Pulse width modulation generator, GaN ICs, GaN power converters, GaN control circuit, GaN technology, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

وصف الملف: electronic resource

Relation: https://ieeexplore.ieee.org/document/10314527/; https://doaj.org/toc/2169-3536

URL الوصول: https://doaj.org/article/c0f4fcfa81064ec3ad579617a62c2596

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المؤلفون: Guido Groeseneken, Karen Geens, Hu Liang, Ming Zhao, Shuzhen You, Xiangdong Li, Stefaan Decoutere, Niels Posthuma

مصطلحات موضوعية: Technology, Materials science, HEMTS, Materials Science, Materials Science, Multidisciplinary, Integrated circuit design, Instability, V-T instability, Engineering, gate leakage, Materials Chemistry, Electrical and Electronic Engineering, Leakage (electronics), Science & Technology, business.industry, Physics, Engineering, Electrical & Electronic, GaN ICs, Condensed Matter Physics, Virtual source, p-GaN gate HEMTs, Electronic, Optical and Magnetic Materials, Power (physics), MVSG compact model, Physics, Condensed Matter, Physical Sciences, TRANSISTORS, Optoelectronics, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6b1ffde052e6b29cdd9aaf9cb706193f
https://lirias.kuleuven.be/handle/123456789/683493

المؤلفون: Guido Groeseneken, Hu Liang, Nooshin Amirifar, Shuzhen You, Ming Zhao, Stefaan Decoutere, Xiangdong Li, Karen Geens, Niels Posthuma

المصدر: Journal of Semiconductors. 42:024103

مصطلحات موضوعية: Comparator, Computer science, Hardware_PERFORMANCEANDRELIABILITY, High-electron-mobility transistor, 01 natural sciences, law.invention, undervoltage lockout (UVLO), law, 0103 physical sciences, Hardware_INTEGRATEDCIRCUITS, Materials Chemistry, Power semiconductor device, Wafer, Electrical and Electronic Engineering, 010302 applied physics, Science & Technology, p-GaN, business.industry, Physics, Electrical engineering, GaN ICs, Condensed Matter Physics, resistor-transistor logic (RTL), Electronic, Optical and Magnetic Materials, Undervoltage-lockout, Physics, Condensed Matter, Physical Sciences, Resistor, business, comparator, Hardware_LOGICDESIGN

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1c0a04a1acd8c07ef73f757f709877df
https://doi.org/10.1088/1674-4926/42/2/024103

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