يعرض 1 - 10 نتائج من 205 نتيجة بحث عن '"Gallium arsenide phosphide"', وقت الاستعلام: 1.04s تنقيح النتائج
  1. 1
    مؤتمر
    Fabrication of low-resistance Sn ohmic contacts on n-type InxGa1-xAsyP1-y for optoelectronic devices

    المؤلفون: Jamil, Umar, Han, Dongho, Lee, Jaehyeong, Kim, Jonghoon

    المصدر: 2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia) Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia), 2023 11th International Conference on. :1998-2003 May, 2023

    Relation: 2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia)

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  2. 2
    دورية أكاديمية
    Two-year outcomes following the adjunctive use of InGaAsP and Er,Cr:YSGG lasers in nonsurgical periodontal therapy in patients with stages III and IV periodontitis.

    المؤلفون: Ciurescu, Codruta Elena, Gutknecht, Norbert, Ciurescu, Vlad Alexandru, Gheorghiu, Anca, Franzen, Rene, Arweiler, Nicole B., Sculean, Anton, Cosgarea, Raluca

    المصدر: Quintessence International; Nov/Dec2021, Vol. 52 Issue 10, p848-861, 14p, 1 Color Photograph, 1 Diagram, 5 Charts, 2 Graphs

    مصطلحات موضوعية: PERIODONTITIS treatment, LASERS in dentistry, HEALTH outcome assessment, INDIUM gallium arsenide phosphide, SEVERITY of illness index, LONGITUDINAL method

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  3. 3
    مؤتمر
    Dual-junction GaAsP/SiGe on silicon tandem solar cells

    المؤلفون: Diaz, Martin, Wang, Li, Gerger, Andrew, Lochtefeld, Anthony, Ebert, Chris, Opila, Robert, Perez-Wurfl, Ivan, Barnett, Allen

    المصدر: 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th. :0827-0830 Jun, 2014

    Relation: 2014 IEEE 40th Photovoltaic Specialists Conference (PVSC)

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  4. 4
    مؤتمر
    Short ciruit current improvement of SiGe solar cell in a gallium arsenide phosphide - silicon germanium dual junction solar cell on Si substrate

    المؤلفون: Zhao, Xin, Li, Dun, Conrad, Brianna, Wang, Li, Soeriyadi, Anastasia H., Diaz, Martin, Lochtefeld, Anthony, Gerger, Andrew, Perez-Wurfl, Ivan, Barnett, Allen

    المصدر: 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd. :1-3 Jun, 2015

    Relation: 2015 IEEE 42nd Photovoltaic Specialists Conference (PVSC)

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  5. 5
    دورية أكاديمية
    Temperature Dependence of the Spontaneous Emission Factor in Subwavelength Semiconductor Lasers

    المؤلفون: Smalley, J. S. T., Gu, Q., Fainman, Y.

    المصدر: IEEE Journal of Quantum Electronics IEEE J. Quantum Electron. Quantum Electronics, IEEE Journal of. 50(3):175-185 Mar, 2014

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  6. 6
    دورية أكاديمية
    Temperature dependence of the photoluminescence polarization of ordered III-V semiconductor alloys.

    المؤلفون: Prutskij, T., Makarov, N., Attolini, G.

    المصدر: Journal of Applied Physics; 2016, Vol. 119 Issue 11, p1-5, 5p, 2 Diagrams, 3 Graphs

    مصطلحات موضوعية: PHOTOLUMINESCENCE, POLARIZATION (Nuclear physics), INDIUM gallium arsenide phosphide, ALLOYS, CRYSTALLOGRAPHY

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  7. 7
    دورية أكاديمية
    Selection of lasing direction in single mode semiconductor square ring cavities.

    المؤلفون: Jin-Woong Lee, Kyoung-Youm Kim, Hee-Jong Moon, Kyung-Sook Hyun

    المصدر: Journal of Applied Physics; 2/7/2016, Vol. 119 Issue 5, p1-7, 7p, 1 Color Photograph, 2 Black and White Photographs, 2 Charts, 5 Graphs

    مصطلحات موضوعية: ACTIVE medium, LASER research, WAVEGUIDES, QUANTUM wells, INDIUM gallium arsenide phosphide, INDIUM gallium arsenide

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  8. 8
    دورية أكاديمية
    A combined kick-out and dissociative diffusion mechanism of grown-in Be in InGaAs and InGaAsP. A new finite difference-Bairstow method for solution of the diffusion equations.

    المؤلفون: Koumetz, Serge D., Martin, Patrick, Murray, Hugues

    المصدر: Journal of Applied Physics; 2014, Vol. 116 Issue 10, p1-13, 13p, 1 Color Photograph, 3 Charts, 6 Graphs

    مصطلحات موضوعية: BERYLLIUM, INDIUM gallium arsenide, INDIUM gallium arsenide phosphide, MOLECULAR beam epitaxy, INTERSTITIAL defects

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  9. 9
    دورية أكاديمية
    Effectiveness of a 655-nm InGaAsP diode laser to detect subgingival calculus in patients with periodontal disease.

    المؤلفون: Laky, Markus, Laky, Brenda, Arslan, Muazzez, Lettner, Stefan, Müller, Michael, Haririan, Hady, Husejnagic, Selma, Rausch‐Fan, Xiaohui, Wimmer, Gernot, Moritz, Andreas, Gregor, Rene, Rausch-Fan, Xiaohui

    المصدر: Journal of Periodontology; Apr2021, Vol. 92 Issue 4, p547-552, 6p

    مصطلحات موضوعية: SEMICONDUCTOR lasers, INDIUM gallium arsenide phosphide, PERIODONTAL disease, SUBGINGIVAL curettage, DENTAL calculus, PATIENTS, LASER therapy, INDIUM, LONGITUDINAL method

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  10. 10
    مؤتمر
    Direct measurement of the inter-diffusion in quantum wells enhanced by group V intermixing for InP- based structures

    المؤلفون: Hulko, O., Thompson, D. A., Simmons, J. G.

    المصدر: 2006 Conference on Optoelectronic and Microelectronic Materials and Devices Optoelectronic and Microelectronic Materials and Devices, 2006 Conference on. :78-81 Dec, 2006

    Relation: 2006 Conference on Optoelectronic and Microelectronic Materials and Devices

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