المؤلفون: Kang, I. M., Jung, S.-J., Choi, T.-H., Jung, J.-H., Chung, C., Kim, H.-S., Oh, H., Lee, H. W., Jo, G., Kim, Y.-K., Kim, H.-G., Choi, K.-M.

المصدر: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 30(4):398-400 Apr, 2009

المؤلفون: Toshimasa Matsuoka, Ikkyun Jo

المصدر: Circuits and Systems. 6(5):143-151

مصطلحات موضوعية: Admittance, Materials science, business.industry, General Engineering, Electrical engineering, NQS, Elmore Constant, Gate Electrode Resistance, chemistry.chemical_compound, MOSFET, chemistry, Gate oxide, Silicide, Electrode, Extraction (military), Current (fluid), business, NQS Effect

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cca05caa8211d94989681cdc8a639656
https://hdl.handle.net/11094/51764

مصطلحات الفهرس: MOSFET, NQS Effect, Gate Electrode Resistance, Elmore Constant, Journal Article, text, 学術雑誌論文 Journal Article

URL: http://hdl.handle.net/11094/51764