يعرض 1 - 10 نتائج من 93 نتيجة بحث عن '"Gate technology"', وقت الاستعلام: 0.91s تنقيح النتائج
  1. 1
    مؤتمر
    Gate Engineered IGBT with Improved Device Performance

    المؤلفون: Sahu, Satish Kumar, Parmar, Onika, Chacko, Saji. T., Rajput, Amit Singh

    المصدر: 2023 IEEE Devices for Integrated Circuit (DevIC) Devices for Integrated Circuit (DevIC), 2023 IEEE. :13-16 Apr, 2023

    Relation: 2023 IEEE Devices for Integrated Circuit (DevIC)

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  2. 2
    مؤتمر
    Single-bit Laser Fault Model in NOR Flash Memories: Analysis and Exploitation

    المؤلفون: Menu, Alexandre, Dutertre, Jean-Max, Rigaud, Jean-Baptiste, Colombier, Brice, Moellic, Pierre-Alain, Danger, Jean-Luc

    المصدر: 2020 Workshop on Fault Detection and Tolerance in Cryptography (FDTC) FDTC Fault Detection and Tolerance in Cryptography (FDTC), 2020 Workshop on. :41-48 Sep, 2020

    Relation: 2020 Workshop on Fault Detection and Tolerance in Cryptography (FDTC)

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  3. 3
    دورية أكاديمية
    A Novel High-Speed Split-Gate Trench Carrier-Stored Trench-Gate Bipolar Transistor with Enhanced Short-Circuit Roughness

    المؤلفون: Zhehong Qian, Wenrong Cui, Tianyang Feng, Hang Xu, Yafen Yang, Qingqing Sun, David Wei Zhang

    المصدر: Micromachines, Vol 15, Iss 6, p 680 (2024)

    مصطلحات موضوعية: CSTBT, split-gate technology, high speed, short-circuit roughness, Mechanical engineering and machinery, TJ1-1570

    وصف الملف: electronic resource

    Relation: https://www.mdpi.com/2072-666X/15/6/680; https://doaj.org/toc/2072-666X

    URL الوصول: https://doaj.org/article/ea03a457347c47748f6b96b8ec9b3ba8

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  4. 4
    دورية أكاديمية
    Design of Poly-Si Junctionless Fin-Channel FET With Quantum-Mechanical Drift-Diffusion Models for Sub-10-nm Technology Nodes

    المؤلفون: Lee, J., Kim, Y., Cho, S.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 63(12):4610-4616 Dec, 2016

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  5. 5
    دورية أكاديمية

    لا يتم عرض هذه النتيجة على الضيوف.

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  6. 6
    مؤتمر
    Design of Power Reversible Comparators with Different Technologies

    المؤلفون: Grover, Amit

    المصدر: 2013 Fifth International Conference on Computational Intelligence, Modelling and Simulation Computational Intelligence, Modelling and Simulation (CIMSim), 2013 Fifth International Conference on. :193-196 Sep, 2013

    Relation: 2013 Fifth International Conference on Computational Intelligence, Modelling and Simulation (CIMSim)

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  7. 7
    مؤتمر
    Comparative Analysis: Power Reversible Comparator Circuits 90 Nm Technology

    المؤلفون: Khurana, Sumit, Grover, Amit, Grover, Neeti

    المصدر: 2013 7th Asia Modelling Symposium Modelling Symposium (AMS), 2013 7th Asia. :103-107 Jul, 2013

    Relation: 2013 7th Asia Modelling Symposium (AMS)

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  8. 8
    مؤتمر
    On the generation and elimination of lonely poly-silicon crater-defects and their impacts on gate oxide integrity (GOI) in dual-gate technology

    المؤلفون: Sheng, Lieyi, Porath, Paul, Glines, Eddie

    المصدر: ASMC 2013 SEMI Advanced Semiconductor Manufacturing Conference Advanced Semiconductor Manufacturing Conference (ASMC), 2013 24th Annual SEMI. :378-381 May, 2013

    Relation: 2013 24th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)

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  9. 9
    مؤتمر
    Consideration to minimize power losses in synchronous rectification

    المؤلفون: Choi, Wonsuk, Young, Sungmo, Son, Dongkook, Shin, Seunghwan, Hyun, Dongseok

    المصدر: 8th International Conference on Power Electronics - ECCE Asia Power Electronics and ECCE Asia (ICPE & ECCE), 2011 IEEE 8th International Conference on. :2899-2905 May, 2011

    Relation: 2011 IEEE 8th International Conference on Power Electronics & ECCE Asia (ICPE 2011- ECCE Asia)

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  10. 10
    دورية أكاديمية
    Silicon-On-Nothing Electrostatically Doped Junctionless Tunnel Field Effect Transistor (SON-ED-JLTFET): A Short Channel Effect Resilient Design

    المؤلفون: Kaity, Aishwarya, Singh, SangeetaAff1, Kondekar, P. N.

    المصدر: Silicon. 13(1):9-23

    Find this article in full text from Springer Verlag. Find this article in full text from ProQuest Full Text Finder
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