المؤلفون: Rideau, D., Dray, A., Gilibert, F., Agut, F., Giguerre, L., Gouget, G., Minondo, M., Juge, A.

المصدر: Proceedings of the 2004 International Conference on Microelectronic Test Structures (IEEE Cat. No.04CH37516) Microelectronic test structures Microelectronic Test Structures, 2004. Proceedings. ICMTS '04. The International Conference on. :149-154 2004

Relation: Proceedings of the 2004 International Conference on Microelectronic Test Structures

المؤلفون: Giguerre, L., Abboun, M., Aniel, F., Zerounian, N., Dubois, A., Adde, R., Blayac, S., Riet, M., Konczykowska, A.

المصدر: 32nd European Solid-State Device Research Conference Solid-State Device Research Conference, 2002. Proceeding of the 32nd European. :223-226 2002

Relation: 32nd European Solid-State Device Research Conference

المؤلفون: Aniel, F., Enciso-Aguilar, M., Zerounian, N., Giguerre, L., Crozat, P., Adde, R., Zeuner, M., Hock, G., Hackbarth, T., Herzog, H.-J., Konig, U.

المصدر: Proceedings of the 5th European Workshop on Low Temperature Electronics Low Temperature Electronics, 2002. Proceedings of the 5th European Workshop on. :3-10 2002

Relation: Proceedings of the 5th European Workshop on Low Temperature Electronics

المؤلفون: Aniel, F., Enciso-Aguilar, M., Giguerre, L., Crozat, P., Adde, R., Mack, T., Seiler, U., Hackbarth, Th., Raynor, B.

المصدر: 2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497) Semiconductor device research Semiconductor Device Research Symposium, 2001 International. :482-485 2001

Relation: 2001 International Semiconductor Device Research Symposium. Symposium Proceedings

المؤلفون: Enciso, M., Fox, A., Aniel, F., Crozat, P., Giguerre, L., Adde, R., Zeuner, M., Hock, G.

المصدر: 31st European Solid-State Device Research Conference Solid-State Device Research Conference, 2001. Proceeding of the 31st European. :443-446 2001

Relation: 31st European Solid-State Device Research Conference

المؤلفون: Encisco, M., Aniel, F., Giguerre, L., Hackbarth, T., Herzog, H., Konig, U., Hollander, B., Mantl, S.

المصدر: International Semiconductor Device Research Symposium, 2003 Semiconductor device research Semiconductor Device Research Symposium, 2003 International. :162-163 2003

Relation: 2003 International Semiconductor Device Research Symposium

المؤلفون: Aniel, F., Enciso, M., Richard, S., Giguerre, L., Zerounian, N., Crozat, P., Adde, R., Hackbarth, T., Herzog, J-H., König, U.

المصدر: In Applied Surface Science 2004 224(1):370-376

المؤلفون: Hackbarth, T., Herzog, H.-J., Hieber, K.-H., König, U., Mantl, S., Holländer, B., Lenk, St., von Känel, H., Enciso, M., Aniel, F., Giguerre, L.

المصدر: In Solid State Electronics 2004 48(10):1921-1925

المؤلفون: Enciso, M., Aniel, F., Giguerre, L., Crozat, P., Adde, R.

المصدر: Enciso, M. ; Aniel, F. ; Giguerre, L. ; Crozat, P. ; Adde, R. (2001) High frequency properties of Si/SiGe n-MODFETs: dependence on gate length and temparture. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.

مصطلحات موضوعية: ING-INF/01 Elettronica

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::33f0f1c6eab0339d77605b7bcb16d470
http://amsacta.unibo.it/81/

المؤلفون: Aniel, F., Enciso-Aguilar, M., Giguerre, L., Crozat, P., Adde, R., Mack, T., Seiler, U., Hackbarth, Th., Raynor, B.

المصدر: 2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497); 2001, p482-485, 4p