يعرض 1 - 10 نتائج من 27 نتيجة بحث عن '"Giroult-Matlakowski, G."', وقت الاستعلام: 1.01s تنقيح النتائج
  1. 1
    مؤتمر
    Extraction of the surface recombination velocity of passivated phosphorus-doped silicon emitters

    المؤلفون: Cuevas, A., Giroult-Matlakowski, G., Basore, P.A., DuBois, C., King, R.R.

    المصدر: Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC) Photovoltaic energy conversion Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on. 2:1446-1449 vol.2 1994

    Relation: Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC)

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  2. 2
    دورية أكاديمية
    Analysis and minimization of small-geometry effects on the current gain of self-aligned 'etched-polysilicon' emitter bipolar transistors

    المؤلفون: Nouailhat, A., Giroult-Matlakowski, G., Marty, A., Degors, N., Bruni, M.-D., Chantre, A.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 39(6):1392-1397 Jun, 1992

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  3. 3
    دورية أكاديمية
    An investigation of nonideal base currents in advanced self-aligned 'etched-polysilicon' emitter bipolar transistors

    المؤلفون: Chantre, A., Festes, G., Giroult-Matlakowski, G., Nouailhat, A.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 38(6):1354-1361 Jun, 1991

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  4. 4
    دورية أكاديمية
    Identification of a corner tunneling current component in advanced CMOS-compatible bipolar transistors

    المؤلفون: Chantre, A., Festes, G., Giroult-Matlakowski, G., Nouailhat, A.

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 38(1):107-110 Jan, 1991

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  5. 5
    مؤتمر
    Identification of Peripheral Base Currents in (Si or SiGe) Epitaxial-Base Single-Polysilicon Self-Aligned Bipolar Transistors

    المؤلفون: Boussetta, H., Giroult-Matlakowski, G., Le Tron, B., Dutartre, D., Warren, P., Bouzid, M.J., Chantre, A.

    المصدر: ESSDERC '94: 24th European Solid State Device Research Conference Solid State Device Research Conference, 1994. ESSDERC '94. 24th European. :63-66 Sep, 1994

    Relation: Proceedings of the 24th European Solid State Device Research Conference

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  6. 6
    مؤتمر
    Small geometry effects in CMOS compatible self-aligned `etched-polysilicon' emitter bipolar transistors

    المؤلفون: Giroult-Matlakowski, G., Marty, A., Degors, N., Chantre, A., Nouailhat, A.

    المصدر: ESSDERC '90: 20th European Solid State Device Research Conference Solid State Device Research Conference, 1990. ESSDERC '90. 20th European. :345-348 Sep, 1990

    Relation: 20th European Solid State Device Research Conference

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  7. 7
    دورية
    Low temperature performance of self-aligned "Etched Polysilicon" emitter pseudo-heterojunction bipolar transistors

    المؤلفون: Giroult-Matlakowski, G., Bousseta, H., Le Tron, B., Dutartre, D., Warren, P., Bouzid, M. J., Nouailhat, A., Ashburn, P., Chantre, A., Giroult-Matlakowski, G., Bousseta, H., Le Tron, B., Dutartre, D., Warren, P., Bouzid, M. J., Nouailhat, A., Ashburn, P., Chantre, A.

    المصدر: Journal de Physique IV - Proceedings; September 1994, Vol. 4 Issue: 1 pC6-111-C6-115, 1116110p

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  8. 8
    دورية أكاديمية
    Deposition of silicon dioxide films using the helicon diffusion reactor for integrated optics applications.

    المؤلفون: Giroult-Matlakowski, G., Charles, C., Durandet, A., Boswell, R. W., Armand, S., Persing, H. M., Perry, A. J., Lloyd, P. D., Hyde, S. R., Bogsanyi, D.

    المصدر: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; 1994, Vol. 12 Issue 5, p2754-2761, 8p

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  9. 9
    دورية أكاديمية
    Characterization of silicon dioxide films deposited at low pressure and temperature in a helicon diffusion reactor.

    المؤلفون: Charles, C., Giroult-Matlakowski, G., Boswell, R. W., Goullet, A., Turban, G., Cardinaud, C.

    المصدر: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; 1993, Vol. 11 Issue 6, p2954-2963, 10p

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  10. 10
    دورية أكاديمية
    Influence of the interfacial oxide layer on the gain of polycrystalline silicon emitter bipolar transistors processed in VLSI BiCMOS technology.

    المؤلفون: Giroult-Matlakowski, G., Degors, N., Marty, A., Chantre, A., Nouailhat, A.

    المصدر: Electronics Letters (Institution of Engineering & Technology); 07/05/1990, Vol. 26 Issue 14, p1002-1004, 3p

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