يعرض 1 - 10 نتائج من 42 نتيجة بحث عن '"Gu, Chengru"', وقت الاستعلام: 0.89s تنقيح النتائج
  1. 1
    مؤتمر
    First Demonstration of Sequential Integration for Stacked Gate-All-Around a-IGZO Nanosheet Transistors with Record Id = 2.05 mA/µm, gm = 1.13 mS/µm and Ultralow SS = 66 mV/dec

    المؤلفون: Li, Qijun, Zhao, Wenjie, Hu, Qianlan, Gu, Chengru, Zhu, Shenwu, Liu, Honggang, Huang, Ru, Wu, Yanqing

    المصدر: 2023 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2023 International. :1-4 Dec, 2023

    Relation: 2023 International Electron Devices Meeting (IEDM)

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  2. 2
    مؤتمر
    First Demonstration of Top-Gate Indium-Tin-Oxide RF Transistors with Record High Cut-off Frequency of 48 GHz, Id of 2.32 mA/μm and gm of 900 μS/μm on SiC Substrate with Superior Reliability at 85 °C

    المؤلفون: Hu, Qianlan, Gu, Chengru, Liu, Shiyuan, Zeng, Min, Zhu, Shenwu, Kang, Jiyang, Liu, Ranhui, Zhao, Wenjie, Tong, Anyu, Li, Qijun, Fu, Tianyue, Huang, Ru, Wu, Yanqing

    المصدر: 2023 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2023 International. :1-4 Dec, 2023

    Relation: 2023 International Electron Devices Meeting (IEDM)

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  3. 3
    مؤتمر
    First Demonstration of Annealing-Free Top Gate La:HZO-IGZO FeFET with Record Memory Window and Endurance

    المؤلفون: Zeng, Min, Hu, Qianlan, Li, Qijun, Liu, Honggang, Yan, Shiwei, Gu, Chengru, Zhao, Wenjie, Huang, Ru, Wu, Yanqing

    المصدر: 2023 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2023 International. :1-4 Dec, 2023

    Relation: 2023 International Electron Devices Meeting (IEDM)

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  4. 4
    مؤتمر
    Optimized IGZO FETs for Capacitorless DRAM with Retention of 10 ks at RT and 7 ks at 85 °C at Zero Vhold with Sub-10 ns Speed and 3-bit Operation

    المؤلفون: Hu, Qianlan, Li, Qijun, Zhu, Shenwu, Gu, Chengru, Liu, Shiyuan, Huang, Ru, Wu, Yanqing

    المصدر: 2022 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2022 International. :26.6.1-26.6.4 Dec, 2022

    Relation: 2022 IEEE International Electron Devices Meeting (IEDM)

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  5. 5
    مؤتمر
    BEOL-Compatible High-Performance a-IGZO Transistors with Record high Ids,max = 1207 μA/μm and on-off ratio exceeding 1011 at Vds = 1V

    المؤلفون: Li, Qijun, Gu, Chengru, Zhu, Shenwu, Hu, Qianlan, Zhao, Wenjie, Li, Xuefei, Huang, Ru, Wu, Yanqing

    المصدر: 2022 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2022 International. :2.7.1-2.7.4 Dec, 2022

    Relation: 2022 IEEE International Electron Devices Meeting (IEDM)

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  6. 6
    مؤتمر
    10-nm Channel Length Indium-Tin-Oxide transistors with Ion = 1860 μA/μm, Gm = 1050 μS/μm at Vds = 1 V with BEOL Compatibility

    المؤلفون: Li, Shengman, Gu, Chengru, Li, Xuefei, Huang, Ru, Wu, Yanqing

    المصدر: 2020 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2020 IEEE International. :40.5.1-40.5.4 Dec, 2020

    Relation: 2020 IEEE International Electron Devices Meeting (IEDM)

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  7. 7
    مؤتمر
    BEOL Compatible 15-nm Channel Length Ultrathin Indium-Tin-Oxide Transistors with Ion = 970 μA/μm and On/off Ratio Near 1011 at Vds = 0.5 V

    المؤلفون: Li, Shengman, Tian, Mengchuan, Gu, Chengru, Wang, Runsheng, Wang, Mengfei, Xiong, Xiong, Li, Xuefei, Huang, Ru, Wu, Yanqing

    المصدر: 2019 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2019 IEEE International. :3.5.1-3.5.4 Dec, 2019

    Relation: 2019 IEEE International Electron Devices Meeting (IEDM)

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  8. 8
    مؤتمر
    High Performance Gigahertz Flexible Radio Frequency Transistors with Extreme Bending Conditions

    المؤلفون: Wang, Mengfei, Tian, Mengchuan, Zhang, Zhenfeng, Li, Shengman, Wang, Runsheng, Gu, Chengru, Shan, Xiaoyu, Xiong, Xiong, Li, Xuefei, Huang, Ru, Wu, Yanqing

    المصدر: 2019 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2019 IEEE International. :8.2.1-8.2.4 Dec, 2019

    Relation: 2019 IEEE International Electron Devices Meeting (IEDM)

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  9. 9
    دورية أكاديمية

    لا يتم عرض هذه النتيجة على الضيوف.

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  10. 10
    دورية أكاديمية

    لا يتم عرض هذه النتيجة على الضيوف.

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