يعرض 1 - 10 نتائج من 156 نتيجة بحث عن '"Guang-Li Luo"', وقت الاستعلام: 1.38s تنقيح النتائج
  1. 1
    دورية أكاديمية
    Stacked SiGe nanosheets p-FET for Sub-3 nm logic applications

    المؤلفون: Chun-Lin Chu, Shu-Han Hsu, Wei-Yuan Chang, Guang-Li Luo, Szu-Hung Chen

    المصدر: Scientific Reports, Vol 13, Iss 1, Pp 1-7 (2023)

    مصطلحات موضوعية: Medicine, Science

    وصف الملف: electronic resource

    Relation: https://doaj.org/toc/2045-2322

    URL الوصول: https://doaj.org/article/33a1c0f83f3347c6b9ff48b8d33cc9bc

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  2. 2
    دورية أكاديمية
    3-D Self-Aligned Stacked Ge Nanowire pGAAFET on Si nFinFET of Single Gate CFET

    المؤلفون: Yi-Wen Lin, Shan-Wen Lin, Bo-An Chen, Chong-Jhe Sun, Siao-Cheng Yan, Guang-Li Luo, Yung-Chun Wu, Fu-Ju Hou

    المصدر: IEEE Journal of the Electron Devices Society, Vol 11, Pp 480-484 (2023)

    مصطلحات موضوعية: Self-aligned, Ge nanowire (NW), Si FinFET, complementary FET (CFET), single gate, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

    وصف الملف: electronic resource

    Relation: https://ieeexplore.ieee.org/document/10233696/; https://doaj.org/toc/2168-6734

    URL الوصول: https://doaj.org/article/3577e1f2e6c947749d4160e51b7f0709

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  3. 3
    دورية أكاديمية
    Demonstration of HfO2-Based Gate Dielectric With ~0.8-nm Equivalent Oxide Thickness on Si0.8Ge0.2 by Trimethylaluminum Pre-Treatment and Al Scavenger

    المؤلفون: Meng-Chien Lee, Wei-Lun Chen, Yi-Yang Zhao, Shin-Yuan Wang, Guang-Li Luo, Chao-Hsin Chien

    المصدر: IEEE Journal of the Electron Devices Society, Vol 11, Pp 274-281 (2023)

    مصطلحات موضوعية: Low EOT, Al scavenger, TMA pre-treatment, SiGe channel, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

    وصف الملف: electronic resource

    Relation: https://ieeexplore.ieee.org/document/10109810/; https://doaj.org/toc/2168-6734

    URL الوصول: https://doaj.org/article/3013eae286fa488392e76d59a2fcf29e

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  4. 4
    دورية أكاديمية
    Investigation of SiGe/Si Bilayer Inverted-T Channel Gate-All-Around Field-Effect-Transistor With Self-Induced Ferroelectric Ge Doped HfO₂

    المؤلفون: Chong-Jhe Sun, Yi-Ju Yao, Siao-Cheng Yan, Yi-Wen Lin, Shan-Wen Lin, Fu-Ju Hou, Guang-Li Luo, Yung-Chun Wu

    المصدر: IEEE Journal of the Electron Devices Society, Vol 10, Pp 408-412 (2022)

    مصطلحات موضوعية: ITFET, GAAFET, Hf-germanate, negative capacitance (NC), ferroelectric, short channel effect (SCE), Electrical engineering. Electronics. Nuclear engineering, TK1-9971

    وصف الملف: electronic resource

    Relation: https://ieeexplore.ieee.org/document/9785876/; https://doaj.org/toc/2168-6734

    URL الوصول: https://doaj.org/article/311a0af233af47548e8ad89f5cbad34c

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  5. 5
    دورية أكاديمية
    High-Performance P- and N-Type SiGe/Si Strained Super-Lattice FinFET and CMOS Inverter: Comparison of Si and SiGe FinFET

    المؤلفون: Yi-Ju Yao, Ching-Ru Yang, Ting-Yu Tseng, Heng-Jia Chang, Tsai-Jung Lin, Guang-Li Luo, Fu-Ju Hou, Yung-Chun Wu, Kuei-Shu Chang-Liao

    المصدر: Nanomaterials, Vol 13, Iss 8, p 1310 (2023)

    مصطلحات موضوعية: super-lattice, strain, SiGe, FinFET, inverter, ON–OFF current ratio, Chemistry, QD1-999

    وصف الملف: electronic resource

    Relation: https://www.mdpi.com/2079-4991/13/8/1310; https://doaj.org/toc/2079-4991

    URL الوصول: https://doaj.org/article/11ad4df17621417882231b9b58c1ba8e

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  6. 6
    دورية أكاديمية
    Low Ge Content Ultra-Thin Fin Width (5nm) Monocrystalline SiGe n-Type FinFET With Low Off State Leakage and High ION/IOFF Ratio

    المؤلفون: Chong-Jhe Sun, Meng-Ju Tsai, Siao-Cheng Yan, Tzu-Ming Chu, Chieng-Chung Hsu, Chun-Lin Chu, Guang-Li Luo, Yung-Chun Wu

    المصدر: IEEE Journal of the Electron Devices Society, Vol 8, Pp 1016-1020 (2020)

    مصطلحات موضوعية: FinFET, SiGe, high mobility, ultra-thin fin, short channel effect, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

    وصف الملف: electronic resource

    Relation: https://ieeexplore.ieee.org/document/9197642/; https://doaj.org/toc/2168-6734

    URL الوصول: https://doaj.org/article/816ae23d20c941b8b184586460b00d2c

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  7. 7
    دورية أكاديمية
    Decreased Event-Related Desynchronization of Mental Rotation Tasks in Young Tibetan Immigrants

    المؤلفون: Zu-qiang Xiang, Yi-lin Huang, Guang-li Luo, Hai-lin Ma, De-long Zhang

    المصدر: Frontiers in Human Neuroscience, Vol 15 (2021)

    مصطلحات موضوعية: high-altitude exposure, mental rotation, event-related desynchronization, time-frequency analysis, motor cortical excitability, Neurosciences. Biological psychiatry. Neuropsychiatry, RC321-571

    وصف الملف: electronic resource

    Relation: https://www.frontiersin.org/articles/10.3389/fnhum.2021.664039/full; https://doaj.org/toc/1662-5161

    URL الوصول: https://doaj.org/article/05fc701f6ccd444782c47db2ab29fe81

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  8. 8
    دورية أكاديمية
    Ge GAA FETs and TMD FinFETs for the Applications Beyond Si—A Review

    المؤلفون: Yao-Jen Lee, Guang-Li Luo, Fu-Ju Hou, Min-Cheng Chen, Chih-Chao Yang, Chang-Hong Shen, Wen-Fa Wu, Jia-Min Shieh, Wen-Kuan Yeh

    المصدر: IEEE Journal of the Electron Devices Society, Vol 4, Iss 5, Pp 286-293 (2016)

    مصطلحات موضوعية: Ge, GAA, triangle, diamond-shaped, TMD, MoS2, Electrical engineering. Electronics. Nuclear engineering, TK1-9971

    وصف الملف: electronic resource

    Relation: https://ieeexplore.ieee.org/document/7546901/; https://doaj.org/toc/2168-6734

    URL الوصول: https://doaj.org/article/b40ad4702e004701beba3270cb4fa02d

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  9. 9
    دورية أكاديمية
    Microwave Annealing for NiSiGe Schottky Junction on SiGe P-Channel

    المؤلفون: Yu-Hsien Lin, Yi-He Tsai, Chung-Chun Hsu, Guang-Li Luo, Yao-Jen Lee, Chao-Hsin Chien

    المصدر: Materials, Vol 8, Iss 11, Pp 7519-7523 (2015)

    مصطلحات موضوعية: germanium, microwave annealing, NiSiGe, Schottky junction, Technology, Electrical engineering. Electronics. Nuclear engineering, TK1-9971, Engineering (General). Civil engineering (General), TA1-2040, Microscopy, QH201-278.5, Descriptive and experimental mechanics, QC120-168.85

    وصف الملف: electronic resource

    Relation: http://www.mdpi.com/1996-1944/8/11/5403; https://doaj.org/toc/1996-1944

    URL الوصول: https://doaj.org/article/3ba055ce70874b029f2eeca4cf17144b

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  10. 10
    مؤتمر
    A comprehensive study of Ge1−xSix on Ge for the Ge nMOSFETs with tensile stress, shallow junctions and reduced leakage

    المؤلفون: Guang-Li Luo, Shih-Chiang Huang, Cheng-Ting Chung, Dawei Heh, Chao-Hsin Chien, Chao-Ching Cheng, Yao-Jen Lee, Wen-Fa Wu, Chiung-Chih Hsu, Mei-Ling Kuo, Jay-Yi Yao, Mao-Nan Chang, Liu, Chee-Wee, Chenming Hu, Chun-Yen Chang, Fu-Liang Yang

    المصدر: 2009 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2009 IEEE International. :1-4 Dec, 2009

    Relation: 2009 IEEE International Electron Devices Meeting (IEDM)

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