يعرض 1 - 10 نتائج من 16 نتيجة بحث عن '"Gyoyoung Jin"', وقت الاستعلام: 1.77s تنقيح النتائج
  1. 1
    دورية أكاديمية
    A unique dual-poly gate technology for 1.2-V mobile DRAM with simple in situ n/sup +/-doped polysilicon

    المؤلفون: Nak-Jin Son, Yongchul Oh, Wookje Kim, Jang, S.-M., Wouns Yang, Gyoyoung Jin, Donggun Park, Kinam Kim

    المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 51(10):1644-1652 Oct, 2004

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  2. 2
    مؤتمر
    Hot-carrier energy distribution model and its application to the MOSFET substrate current

    المؤلفون: Chang-sub Lee, Gyoyoung Jin, Keun-ho Lee, Jeong-taek Kong, Won-seong Lee, Yong-han Rho, Kan, E.C., Dutton, R.W.

    المصدر: International Conference on Simulation of Semiconductor Processes and Devices Simulation of semiconductor processes Simulation of Semiconductor Processes and Devices, 2002. SISPAD 2002. International Conference on. :171-173 2002

    Relation: 2002 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2002)

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  3. 3
    مؤتمر
    Lateral-Extended (LatEx.) active for improvement of data retention time for sub 60nm DRAM era

    المؤلفون: Sungsam Lee, Jongchul Park, Kwangwoo Lee, Sungho Jang, Junho Lee, Hyunsook Byun, Ilgweon Kim, Yongjin Choi, Myoungseob Shim, Duheon Song, Joosung Park, Taewoo Lee, Dongho Shin, Gyoyoung Jin, Kinam Kim

    المصدر: ESSDERC 2007 - 37th European Solid State Device Research Conference Solid State Device Research Conference, 2007. ESSDERC 2007. 37th European. :327-329 Sep, 2007

    Relation: ESSDERC 2007 - 37th European Solid State Device Research Conference

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  4. 4
    مؤتمر
    Scaling and reliability of NAND flash devices

    المؤلفون: Youngwoo Park, Jaeduk Lee, Seong Soon Cho, Gyoyoung Jin, Eunseung Jung

    المصدر: 2014 IEEE International Reliability Physics Symposium Reliability Physics Symposium, 2014 IEEE International. :2E.1.1-2E.1.4 Jun, 2014

    Relation: 2014 IEEE International Reliability Physics Symposium (IRPS)

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  5. 5
    مؤتمر
    A 6F/sup 2/ DRAM technology in 60nm era for gigabit densities

    المؤلفون: Changhyun Cho, Sangho Song, Sangho Kim, Sungho Jang, Sungsam Lee, Hyungtak Kim, Yangsoo Sung, Sangmin Jeon, Gisung Yeo, Youngsun Kim, Yungi Kim, Gyoyoung Jin, Kinam Kim

    المصدر: Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005. VLSI Technology VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on. :36-37 2005

    Relation: 2005 Symposium on VLSI Technology

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  6. 6
    مؤتمر
    A new practical method to include recombination-generation process in self-consistent Monte Carlo device simulation

    المؤلفون: Gyoyoung Jin, Kan, E.C., Dutton, R.W.

    المصدر: 1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095) Simulation of semiconductor processes and devices Simulation of Semiconductor Processes and Devices, 1996. SISPAD 96. 1996 International Conference on. :61-62 1996

    Relation: Proceedings of International Conference on Simulation of Semiconductor Processes and Devices

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  7. 7
    Advanced 10 nm Width Silicon-on-Insulator Tri-Gate Transistors with NO Annealing of Gate Oxide Using Optimized Novel Silicon-on-Insulator Realization Technology

    المؤلفون: Sung Hwan Kim, Hyun Jun Bae, Chang Woo Oh, Dong-Won Kim, Satoru Yamada, Gyoyoung Jin, Yonghan Roh

    المصدر: Japanese Journal of Applied Physics. 51:04DC04

    مصطلحات موضوعية: Physics and Astronomy (miscellaneous), General Engineering, General Physics and Astronomy

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::421bb5e83028f6c93a420435045e6f22
    https://doi.org/10.7567/jjap.51.04dc04

    View this record from the Institute of Physics
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  8. 8
    مؤتمر
    Extracting accurate position and energy level of oxide trap generating random telegraph noise(RTN) in recessed channel MOSFET's.

    المؤلفون: Sunyoung Park, Sanghoon Lee, Yeonsung Kang, Byung-Gook Park, Jong-Ho Lee, Jooyoung Lee, Gyoyoung Jin, Hyungcheol Shin

    المصدر: 2010 Proceedings of the European Solid-State Device Research Conference (ESSDERC); 2010, p337-340, 4p

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  9. 9
    مؤتمر
    Investigation on hot carrier reliability of Gate-All-Around Twin Si Nanowire Field Effect Transistor.

    المؤلفون: Yun Young Yeoh, Sung Dae Suk, Ming Li, Kyoung Hwan Yeo, Dong-Won Kim, Gyoyoung Jin, Kyoungsuk Oh

    المصدر: 2009 IEEE International Reliability Physics Symposium; 2009, p400-404, 5p

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  10. 10
    مؤتمر
    Random Telegraph Noise in n-type and p-type silicon nanowire transistors.

    المؤلفون: Seungwon Yang, Kyoung Hwan Yeo, Dong-Won Kim, Kang-ill Seo, Donggun Park, Gyoyoung Jin, KyungSeok Oh, Hyungcheol Shin

    المصدر: 2008 IEEE International Electron Devices Meeting; 2008, p1-4, 4p

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