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1دورية أكاديمية
المصدر: Materials, Vol 8, Iss 2, Pp 561-574 (2015)
مصطلحات موضوعية: H-doped indium oxide, Hall effect, grain boundary passivation, hydrogen, X-ray photoelectron spectroscopy (XPS), Technology, Electrical engineering. Electronics. Nuclear engineering, TK1-9971, Engineering (General). Civil engineering (General), TA1-2040, Microscopy, QH201-278.5, Descriptive and experimental mechanics, QC120-168.85
وصف الملف: electronic resource
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2
المصدر: Materials
مصطلحات موضوعية: grain boundary passivation, hydrogen, Hall effect, X-ray photoelectron spectroscopy (XPS), H-doped indium oxide, Article
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3دورية أكاديمية
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المصدر: Materials, Vol 8, Iss 2, Pp 561-574 (2015)
Materials
Volume 8
Issue 2
Pages 561-574مصطلحات موضوعية: Materials science, Annealing (metallurgy), Analytical chemistry, H-doped indium oxide, lcsh:Technology, X-ray photoelectron spectroscopy, Hall effect, Sputtering, grain boundary passivation, General Materials Science, Thin film, lcsh:Microscopy, lcsh:QC120-168.85, lcsh:QH201-278.5, lcsh:T, Doping, X-ray photoelectron spectroscopy (XPS), Sputter deposition, lcsh:TA1-2040, hydrogen, lcsh:Descriptive and experimental mechanics, Grain boundary, lcsh:Electrical engineering. Electronics. Nuclear engineering, lcsh:Engineering (General). Civil engineering (General), lcsh:TK1-9971
وصف الملف: application/pdf
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fa764b1d56fe484fa03294b8e538c36c
https://infoscience.epfl.ch/record/208393