يعرض 1 - 10 نتائج من 51 نتيجة بحث عن '"H. Brut"', وقت الاستعلام: 1.84s تنقيح النتائج
  1. 1
    P14.125 Retrospective analysis of long-term response to bevacizumab in combination with irinotecan for recurrent glioblastoma: identification of prognostic factors

    المؤلفون: Georges Noël, W. Waissi, R. Schott, Bruno Chauffert, Nelly Etienne-Selloum, M C Morisse, C. Besson, H Brut, D. Prebay

    المصدر: Neuro Oncol

    مصطلحات موضوعية: Oncology, Cancer Research, medicine.medical_specialty, Bevacizumab, business.industry, Recurrent glioblastoma, Poster Presentations, Irinotecan, Long term response, Internal medicine, medicine, Retrospective analysis, Identification (biology), Neurology (clinical), business, medicine.drug

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::73a85591a8f054615639fb65fa602d74
    https://doi.org/10.1093/neuonc/noz126.360

    أضف إلى المفضلة
  2. 2
    Measurement of Capacitances in Multigate Transistors by Coulomb Blockade Spectroscopy

    المؤلفون: Max Hofheinz, Thomas Skotnicki, X. Jehl, Antoine Cros, M. Sanquer, Philippe Coronel, H. Brut, Robin Cerutti

    المصدر: IEEE Transactions on Nanotechnology. 7:74-78

    مصطلحات موضوعية: Materials science, business.industry, Transistor, Electrical engineering, Coulomb blockade, Hybrid-pi model, Capacitance, Computer Science Applications, Silicon-germanium, law.invention, chemistry.chemical_compound, chemistry, Nanoelectronics, law, MOSFET, Optoelectronics, Electrical and Electronic Engineering, business, Communication channel

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::1f0cc7d76f0b61da0e302fea9105cbcd
    https://doi.org/10.1109/tnano.2007.908683

    أضف إلى المفضلة
  3. 3
    A New Technique to Extract the Gate Bias Dependent S/D Series Resistance of Sub-100nm MOSFETs

    المؤلفون: Antoine Cros, H. Brut, Gerard Ghibaudo, D. Fleury, G. Bidal, Emmanuel Josse

    المساهمون: Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), STMicroelectronics [Crolles] (ST-CROLLES)

    المصدر: International Symposium on VLSI Technology, Systems and Applications
    International Symposium on VLSI Technology, Systems and Applications, Apr 2009, Hsinchu, Taiwan. pp.109-110, ⟨10.1109/VTSA.2009.5159314⟩

    مصطلحات موضوعية: 010302 applied physics, Physics, Total resistance, extraction technique, Equivalent series resistance, Series Resistance, Transconductance, low field moblity, Analytical chemistry, Context (language use), 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, MOSFET, Logic gate, 0103 physical sciences, Electronic engineering, Statistical analysis, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, Reduction factor

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aba26fb93d67c5d5cfcaad4c74913401
    https://hal.archives-ouvertes.fr/hal-00465769/document

    أضف إلى المفضلة
  4. 4
    Automatic extraction methodology for accurate measurement of effective channel length on 65nm MOSFET technology and Below

    المؤلفون: K. Romanjek, H. Brut, Antoine Cros, Gerard Ghibaudo, B. Dumont, F. Perrier, David Roy, D. Fleury

    المساهمون: Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), STMicroelectronics [Crolles] (ST-CROLLES), NXP Semiconductors, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), SOFRADIR (Veurey-Voroize), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), Domenget, Chahla

    المصدر: IEEE Transactions on Semiconductor Manufacturing
    IEEE Transactions on Semiconductor Manufacturing, 2008, 21 (4), pp.504-512. ⟨10.1109/TSM.2008.2004316⟩
    HAL
    IEEE Transactions on Semiconductor Manufacturing, Institute of Electrical and Electronics Engineers, 2008
    IEEE Transactions on Semiconductor Manufacturing, Institute of Electrical and Electronics Engineers, 2008, 21 (4), pp.504-512. ⟨10.1109/TSM.2008.2004316⟩

    مصطلحات موضوعية: effective length, Computer science, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Circuit design, Feature extraction, 02 engineering and technology, Hardware_PERFORMANCEANDRELIABILITY, 01 natural sciences, Capacitance, Industrial and Manufacturing Engineering, Length measurement, MOSFET, ISI, capacitance measurements, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Hardware_INTEGRATEDCIRCUITS, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, 010302 applied physics, extraction technique, Estimation theory, 020208 electrical & electronic engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Built-in self-test, Communication channel

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::68828376226b6b9e7cbf7a2a832b644e
    https://hal.science/hal-00465752

    أضف إلى المفضلة
  5. 5
    Understanding the Effect of Laser Anneal on LSTP 45nm Node MOS Transistor Electrical Parameters

    المؤلفون: Antoine Cros, M. Bidaud, Michel Haond, H. Brut, Kathy Barla, Remi Beneyton, G. Ribes, B. Dumont, R. Ranica, Emmanuel Josse, S. Renard

    المصدر: Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials.

    مصطلحات موضوعية: Materials science, law, business.industry, Transistor, Optoelectronics, Node (circuits), business, Laser, law.invention

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::7f531323428baf05a7b853bbc2a2a113
    https://doi.org/10.7567/ssdm.2008.b-8-2

    أضف إلى المفضلة
  6. 6
    New Y-function-based methodology for accurate extraction of electrical parameters on nano-scaled MOSFETs

    المؤلفون: Antoine Cros, H. Brut, D. Fleury, Gerard Ghibaudo

    المساهمون: Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), Domenget, Chahla

    المصدر: IEEE International Conference on Microelecronics Test Structure, ICMTS, Edinburgh, Scotland
    IEEE International Conference on Microelecronics Test Structure, ICMTS, Edinburgh, Scotland, 2008, Edinburgh, France
    HAL

    مصطلحات موضوعية: 010302 applied physics, Engineering, business.industry, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Attenuation, 020206 networking & telecommunications, 02 engineering and technology, 01 natural sciences, CMOS, Robustness (computer science), 0103 physical sciences, Nano, MOSFET, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Surface roughness, Microelectronics, Telephony, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, ComputingMilieux_MISCELLANEOUS

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a2d001be32f8c9a619fcda48d09bc122
    https://doi.org/10.1109/icmts.2008.4509332

    أضف إلى المفضلة
  7. 7
    Fully-depleted SOI technology using high-k and single-metal gate for 32 nm node LSTP applications featuring 0.179 μm2 6T-SRAM bitcell

    المؤلفون: C. Fenouillet-Beranger, J. Todeschini, J.C. Le-Denmat, N. Loubet, C. Gallon, P. Perreau, S. Manakli, B. Minghetti, L. Pain, V. Arnal, A. Vandooren, S. Denorme, D. Aime, L. Tosti, C. Savardi, M. Broekaart, P. Gouraud, F. Leverd, V. Dejonghe, P. Brun, M. Guillermet, M. Aminpur, B. Icard, S. Barnola, F. Rouppert, F. Martin, T. Salvetat, S. Lhostis, C. Laviron, N. Auriac, T. Kormann, G. Chabanne, S. Gaillard, F. Boeuf, O. Belmont, E. Laffosse, D. Barge, A. Zauner, A. Tarnowka, K. Romanjec, H. Brut, A. Lagha, S. Bonnetier, F. Joly, J. Coignus, N. Mayet, A. Cathignol, D. Galpin, D. Pop, R. Delsol, R. Pantel, F. Pionnier, G. Thomas, D. Bensahel, S. Deleonibus, O. Faynot, T. Skotnicki, H. Mingam, L. Brevard, C. Buj, C. Soonekindt

    المصدر: 2007 IEEE International Electron Devices Meeting.

    مصطلحات موضوعية: Materials science, business.industry, Transistor, Electrical engineering, Silicon on insulator, law.invention, PMOS logic, law, Optoelectronics, Static random-access memory, Power MOSFET, Metal gate, business, NMOS logic, High-κ dielectric

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::9b01d356319804f33639c8bbcd010bbb
    https://doi.org/10.1109/iedm.2007.4418919

    أضف إلى المفضلة
  8. 8
    Automatic extraction methodology for accurate measurement of effective channel length on 65nm MOSFET technology and below

    المؤلفون: B. Dumont, K. Romanjek, H. Brut, David Roy, D. Fleury, Antoine Cros, F. Perrier

    المساهمون: Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), STMicroelectronics [Crolles] (ST-CROLLES), NXP Semiconductors, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), SOFRADIR (Veurey-Voroize), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)

    المصدر: International Conference on Microelectronics Test Structures
    International Conference on Microelectronics Test Structures, Mar 2007, Tokyo, Japan. pp.89-92, ⟨10.1109/ICMTS.2007.374461⟩

    مصطلحات موضوعية: 010302 applied physics, extraction technoqie, Estimation theory, Circuit design, Effective length, Transistor, Extrapolation, 020206 networking & telecommunications, 02 engineering and technology, 01 natural sciences, measuerements, law.invention, Length measurement, Nanoelectronics, Parasitic capacitance, law, 0103 physical sciences, MOSFET, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, capacitance technique, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Mathematics

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5513637182f590fe2e7eb75fa62e51ea
    https://doi.org/10.1109/icmts.2007.374461

    أضف إلى المفضلة
  9. 9
    A New Combined Methodology for Write-Margin Extraction of Advanced SRAM

    المؤلفون: Bertrand Borot, H. Brut, Nicolas Planes, N. Gierczynski

    المصدر: 2007 IEEE International Conference on Microelectronic Test Structures.

    مصطلحات موضوعية: Scheme (programming language), Engineering, business.industry, Process (computing), Reliability engineering, Term (time), Dimension (vector space), Electronic engineering, Node (circuits), Static random-access memory, Adaptation (computer science), business, computer, Voltage, computer.programming_language

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::cf1b53afdf8c2664c5d4590b24b12733
    https://doi.org/10.1109/icmts.2007.374463

    أضف إلى المفضلة
  10. 10
    Unexpected mobility degradation for very short devices : A new challenge for CMOS scaling

    المؤلفون: Robin Cerutti, Romain Wacquez, K. Romanjek, B. Dumont, Blandine Duriez, D. Fleury, Thomas Skotnicki, S. Harrison, Philippe Coronel, H. Brut, Frederic Boeuf, A. Pouydebasque, Antoine Cros, Gerard Ghibaudo, Romain Gwoziecki

    المساهمون: Institut de Microélectronique, Electromagnétisme et Photonique (IMEP), Université Joseph Fourier - Grenoble 1 (UJF)-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), Domenget, Chahla, Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique de Grenoble (INPG)-Université Joseph Fourier - Grenoble 1 (UJF)

    المصدر: Unexpected mobility degradation for very short devices : A new challenge for CMOS scaling
    IEDM 2006
    IEDM 2006, 2006, San Francisco, United States. pp.XX
    HAL

    مصطلحات موضوعية: 010302 applied physics, Electron mobility, Materials science, Dopant, business.industry, Annealing (metallurgy), [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Doping, Oxide, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Cmos scaling, chemistry.chemical_compound, Ion implantation, CMOS, chemistry, 0103 physical sciences, Electronic engineering, Optoelectronics, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology, business, ComputingMilieux_MISCELLANEOUS

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ac25aecd6d99eb30daacec05d76bf90f
    https://hal.archives-ouvertes.fr/hal-00147133

    أضف إلى المفضلة
أدوات البحث: أحصل على تغذية RSS – أرسل هذا البحث بالبريد الإلكتروني – حفظ البحث – جدول التنبيهات: لا شيء