نتائج البحث - "H. C. Ha"

1

Suitability of N-ON Recessed Implanted Gate Vertical-Channel SiC JFETs for Optically Triggered 1200 V Solid-State Circuit Breakers

المؤلفون: B. Steiner, H. C. Ha, Kevin Lawson, Damian Urciuoli, Victor Veliadis, Stephen B. Bayne

المصدر: IEEE Journal of Emerging and Selected Topics in Power Electronics. 4:874-879

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::3ce6919d7c1f29347f327c8bcba9947a
https://doi.org/10.1109/jestpe.2016.2583430

2

دورية أكاديمية

A full year of aerosol size distribution data from the central Arctic under an extreme positive Arctic Oscillation: insights from the Multidisciplinary drifting Observatory for the Study of Arctic Climate (MOSAiC) expedition

المصدر: Atmospheric Chemistry and Physics, Vol 23, Pp 389-415 (2023)

مصطلحات موضوعية: Physics, QC1-999, Chemistry, QD1-999

وصف الملف: electronic resource

Relation: https://acp.copernicus.org/articles/23/389/2023/acp-23-389-2023.pdf; https://doaj.org/toc/1680-7316; https://doaj.org/toc/1680-7324

URL الوصول: https://doaj.org/article/792e28cf901f4e77932d77eceff41e00

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3

Reliable Operation of SiC Junction-Field-Effect-Transistor Subjected to over 2 Million 600-V Hard Switch Stressing Events

المؤلفون: Damian Urciuoli, Victor Veliadis, H. C. Ha, Pavel Borodulin, N. El Hinnawy, Stephen B. Bayne, B. Steiner, Charles Scozzie

المصدر: Materials Science Forum. :921-924

مصطلحات موضوعية: Materials science, business.industry, Mechanical Engineering, Electrical engineering, JFET, Condensed Matter Physics, Fault detection and isolation, law.invention, Capacitor, Reliability (semiconductor), Mechanics of Materials, law, RLC circuit, General Materials Science, Power semiconductor device, Field-effect transistor, business, Circuit breaker

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::0eeb42b0d0782f7365c3feaa8f4d02ec
https://doi.org/10.4028/www.scientific.net/msf.740-742.921

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Reliable Operation of 1200-V SiC Vertical Junction-Field-Effect-Transistor Subjected to 16,000-Pulse Hard Switching Stressing

المؤلفون: G. Alvarez, Stephen B. Bayne, Charles Scozzie, Damian Urciuoli, Kevin Lawson, Victor Veliadis, H. C. Ha

المصدر: Materials Science Forum. :1021-1024

مصطلحات موضوعية: Materials science, business.industry, Mechanical Engineering, Electrical engineering, JFET, Ranging, Condensed Matter Physics, Thermal conduction, Fault detection and isolation, Reliability (semiconductor), Mechanics of Materials, General Materials Science, Field-effect transistor, Power semiconductor device, business, Voltage

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::07cd2560a7fbeab0672899e5404cd1ef
https://doi.org/10.4028/www.scientific.net/msf.717-720.1021

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Suitability of N-ON recessed implanted gate vertical-channel SiC JFETs for optically triggered 1200 V solid-state-circuit-breakers

المؤلفون: H. C. Ha, B. Steiner, Stephen B. Bayne, Damian Urciuoli, Kevin Lawson, Victor Veliadis

المصدر: 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

مصطلحات موضوعية: Materials science, business.industry, Transistor, Electrical engineering, JFET, law.invention, Capacitor, chemistry.chemical_compound, chemistry, law, Silicon carbide, Optoelectronics, RLC circuit, MESFET, Resistor, business, Voltage

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::d6f9a4b66b4195a39b86e0e9579ed553
https://doi.org/10.1109/wipda.2015.7369297

6

دورية أكاديمية

Infants later diagnosed with autism have lower canonical babbling ratios in the first year of life

المؤلفون: L. D. Yankowitz, V. Petrulla, S. Plate, B. Tunc, W. Guthrie, S. S. Meera, K. Tena, J. Pandey, M. R. Swanson, J. R. Pruett, M. Cola, A. Russell, N. Marrus, H. C. Hazlett, K. Botteron, J. N. Constantino, S. R. Dager, A. Estes, L. Zwaigenbaum, J. Piven, R. T. Schultz, J. Parish-Morris, The IBIS Network

المصدر: Molecular Autism, Vol 13, Iss 1, Pp 1-16 (2022)

مصطلحات موضوعية: Neurology. Diseases of the nervous system, RC346-429

وصف الملف: electronic resource

Relation: https://doaj.org/toc/2040-2392

URL الوصول: https://doaj.org/article/a01aa2458b2f410b89c41e2772233c48

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7

600-V / 2-A Symmetrical Bi-Directional Power Flow Using Vertical-Channel JFETs Connected in Common Source Configuration

المؤلفون: Robert S. Howell, Victor Veliadis, Damian Urciuoli, H. C. Ha, Harold Hearne, Charles Scozzie

المصدر: Materials Science Forum. :1147-1150

مصطلحات موضوعية: Vertical channel, Materials science, business.industry, Mechanical Engineering, Electrical engineering, Condensed Matter Physics, Thermal conduction, Fault detection and isolation, Power flow, Mechanics of Materials, Scalability, Thermal, General Materials Science, business, Leakage (electronics)

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::231d824e8d32c69d4a0fe57c3ebe7e88
https://doi.org/10.4028/www.scientific.net/msf.645-648.1147

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Measurement of Azimuthal Asymmetries in Inclusive Production of Hadron Pairs in e+e- Annihilation at Belle

المؤلفون: R, Seidl, K, Hasuko, K, Abe, I, Adachi, H, Aihara, D, Anipko, Y, Asano, T, Aushev, A M, Bakich, V, Balagura, E, Barberio, W, Bartel, A, Bay, U, Bitenc, I, Bizjak, S, Blyth, A, Bozek, M, Bracko, T E, Browder, P, Chang, A, Chen, B G, Cheon, Y, Choi, Y K, Choi, A, Chuvikov, J, Dalseno, M, Danilov, M, Dash, J, Dragic, S, Eidelman, S, Fratina, N, Gabyshev, T, Gershon, A, Go, G, Gokhroo, B, Golob, A, Gorisek, M, Grosse Perdekamp, H C, Ha, K, Hayasaka, H, Hayashii, M, Hazumi, T, Hokuue, Y, Hoshi, S, Hou, W-S, Hou, T, Iijima, K, Inami, A, Ishikawa, R, Itoh, M, Iwasaki, Y, Iwasaki, J H, Kang, P, Kapusta, N, Katayama, H, Kawai, T, Kawasaki, H R, Khan, H, Kichimi, S K, Kim, S M, Kim, R, Kulasiri, R, Kumar, C C, Kuo, A, Kuzmin, Y-J, Kwon, J S, Lange, J, Lee, T, Lesiak, J, Li, A, Limosani, S-W, Lin, D, Liventsev, F, Mandl, T, Matsumoto, A, Matyja, W, Mitaroff, H, Miyake, H, Miyata, Y, Miyazaki, R, Mizuk, T, Mori, I, Nakamura, E, Nakano, M, Nakao, Z, Natkaniec, S, Nishida, O, Nitoh, A, Ogawa, S, Ogawa, T, Ohshima, T, Okabe, S, Okuno, S L, Olsen, H, Ozaki, P, Pakhlov, H, Palka, C W, Park, H, Park, N, Parslow, L S, Peak, R, Pestotnik, L E, Piilonen, Y, Sakai, N, Sato, N, Satoyama, T, Schietinger, O, Schneider, J, Schümann, K, Senyo, M E, Sevior, M, Shapkin, H, Shibuya, A, Somov, N, Soni, R, Stamen, S, Stanic, M, Staric, K, Sumisawa, F, Takasaki, K, Tamai, M, Tanaka, G N, Taylor, Y, Teramoto, X C, Tian, T, Tsukamoto, S, Uehara, T, Uglov, S, Uno, P, Urquijo, Y, Usov, G, Varner, S, Villa, C C, Wang, C H, Wang, Y, Watanabe, E, Won, Q L, Xie, B D, Yabsley, A, Yamaguchi, Y, Yamashita, M, Yamauchi, J, Ying, Y, Yusa, L M, Zhang, Z P, Zhang, V, Zhilich, D, Zürcher

المصدر: Physical Review Letters. 96(232002):1-6

وصف الملف: application/pdf

URL الوصول: https://explore.openaire.eu/search/publication?articleId=pmid_dedup__::185cad6e3d7cd87432f7e088bc9aa8d7
https://niigata-u.repo.nii.ac.jp/records/2401

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Reliable Operation of SiC JFET Subjected to Over 2.4 Million 1200-V/115-A Hard Switching Events at 150 $^{\circ}\hbox{C}$

المؤلفون: Shalini Gupta, Charles Scozzie, Stephen B. Bayne, Pavel Borodulin, Robert S. Howell, El-Hinnawy Nabil, B. Steiner, Kevin Lawson, Damian Urciuoli, Victor Veliadis, H. C. Ha

المصدر: IEEE Electron Device Letters. 34:384-386

مصطلحات موضوعية: Materials science, business.industry, Transistor, Electrical engineering, JFET, High voltage, Electronic, Optical and Magnetic Materials, law.invention, Capacitor, law, RLC circuit, Electrical and Electronic Engineering, Resistor, business, Circuit breaker, Voltage

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::7def9dfa128930facb22e433f1f2b4c4
https://doi.org/10.1109/led.2013.2241724

10

Hard-Switch Stressing of Vertical-Channel Implanted-Gate SiC JFETs

المؤلفون: El-Hinnawy Nabil, Charles Scozzie, G. Alvarez, Victor Veliadis, Damian Urciuoli, Pavel Borodulin, Stephen B. Bayne, Kevin Lawson, H. C. Ha

المصدر: IEEE Electron Device Letters. 33:86-88

مصطلحات موضوعية: Materials science, business.industry, Transistor, Electrical engineering, JFET, Electronic, Optical and Magnetic Materials, law.invention, Capacitor, law, Rise time, Optoelectronics, RLC circuit, Power semiconductor device, MESFET, Electrical and Electronic Engineering, Resistor, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::904ecd221f2637ba3a565f5873958e3e
https://doi.org/10.1109/led.2011.2172183

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