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المؤلفون: Dan Buca, Wolfgang Skorupa, Siegfried Mantl, Renato A. Minamisava, Franz Lanzerath, B. Ghyselen, Jean-Michel Hartmann, Uwe Breuer, Wolfgang Heiermann, N. Kernevez
المصدر: 215th ECS Meeting-Symposium on Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, 24.-29.05.2009, San Francisco, USAECS Transactions, 19(2009)1, 79-86, Pennington, NJ, USA: The Electrochemical Society
مصطلحات موضوعية: Flash-lamp, Materials science, Dopant, sSOI, business.industry, HOI and sHOI, Silicon on insulator, nanoelectronics devices, suppression of diffusionantimony, dopant activation in SOI, flash lamp annealing, Optoelectronics, ultra shallow and ultra steep junctions, strained Si and SiGe/Si heterostructures on insulator, boron, business