المؤلفون: Hu, Yaoqiao, Cho, Kyeongjae

المصدر: Journal of Applied Physics; 7/7/2024, Vol. 136 Issue 1, p1-12, 12p

مصطلحات موضوعية: HOLE mobility, P-type semiconductors, COMPOUND semiconductors, TRANSITION metal oxides, VALENCE bands

المؤلفون: Patel, Khantil, Khatua, Rudranarayan, Patrikar, Kalyani, Mondal, Anirban

المصدر: Journal of Chemical Physics; 4/14/2024, Vol. 160 Issue 14, p1-11, 11p

مصطلحات موضوعية: SOLAR cells, CHEMICAL plants, PHOTOVOLTAIC power systems, CHARGE carrier mobility, FULLERENES, MOLECULAR dynamics, HALOGENS, ELECTRON mobility, HOLE mobility

المؤلفون: Ishikawa, Ryoya, Tanaka, Hajime, Kaneko, Mitsuaki, Kimoto, Tsunenobu

المصدر: Journal of Applied Physics; 2/21/2024, Vol. 135 Issue 7, p1-9, 9p

مصطلحات موضوعية: HOLE mobility, BRILLOUIN zones, EPITAXIAL layers, ANISOTROPY, VALENCE bands, QUANTUM Hall effect

المؤلفون: Yao, Xiaoping, Zhu, Ziye, Zhao, Shu, Li, Wenbin

المصدر: Journal of Applied Physics; 12/21/2023, Vol. 134 Issue 23, p1-8, 8p

مصطلحات موضوعية: ELECTRON mobility, SEMICONDUCTORS, ACOUSTIC phonons, CHARGE carrier mobility, HOLE mobility, PHONON scattering, ORGANIC field-effect transistors

المؤلفون: Kudryavtsev, K. E., Andreev, B. A., Lobanov, D. N., Kalinnikov, M. A., Yablonskiy, A. N., Yunin, P. A., Novikov, A. V., Krasilnik, Z. F.

المصدر: Journal of Applied Physics; 12/7/2023, Vol. 134 Issue 21, p1-8, 8p

مصطلحات موضوعية: INDIUM gallium nitride, STIMULATED emission, CONDUCTION bands, VALENCE bands, HOLE mobility, CHARGE carrier mobility

المؤلفون: Li, X., Liu, Y., Wang, J., Wang, E., Zhang, G.

المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 70(8):4108-4114 Aug, 2023

المؤلفون: Nikitin, S. S., Zavyalov, M. A., Dyakina, M. S., Vladimirova, E. V., Merkulov, O. V.^{Aff2, IDs10008023057162_cor5}, Patrakeev, M. V.

المصدر: Journal of Solid State Electrochemistry: Energy, Materials and Environmental Science & Technology. 28(6):1839-1847

المؤلفون: Chen, C., Han, X., Sumita, K., Toprasertpong, K., Takenaka, M., Takagi, S.

المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 70(7):3963-3969 Jul, 2023

المؤلفون: Kumar, Ashutosh, Berg, Martin, Wang, Qin, Uzuhashi, Jun, Ohkubo, Tadakatsu, Salter, Michael, Ramvall, Peter

المصدر: Journal of Applied Physics; 7/21/2023, Vol. 134 Issue 3, p1-9, 9p

مصطلحات موضوعية: GALLIUM nitride, NITROGEN, HOLE mobility, HALL effect, X-ray diffraction, MAGNESIUM, GALLIUM alloys

المؤلفون: Liu, Shiyuan, Xiong, Xiong^{Aff1, Aff2, IDs1143202440326_cor2}, Wang, Xin, Shi, Xinhang, Huang, Ru, Wu, Yanqing^{Aff1, Aff2, IDs1143202440326_cor6}

المصدر: Science China Information Sciences. 67(6)