المؤلفون: Soo Cheol Kang, Hyun-Wook Jung, Sung-Jae Chang, Seung Mo Kim, Sang Kyung Lee, Byoung Hun Lee, Haecheon Kim, Youn-Sub Noh, Sang-Heung Lee, Seong-Il Kim, Ho-Kyun Ahn, Jong-Won Lim

المصدر: Nanomaterials, Vol 10, Iss 11, p 2116 (2020)

مصطلحات موضوعية: AlGaN/GaN HEMTs, enhancement-mode, fluorinated-gate, recessed gate, Chemistry, QD1-999

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2079-4991/10/11/2116; https://doaj.org/toc/2079-4991

URL الوصول: https://doaj.org/article/fe8bc6099d2b4c19bc414e2ed09b6d2e

المؤلفون: Sung-Jae Chang, Dong-Seok Kim, Tae-Woo Kim, Jung-Hee Lee, Youngho Bae, Hyun-Wook Jung, Soo Cheol Kang, Haecheon Kim, Youn-Sub Noh, Sang-Heung Lee, Seong-Il Kim, Ho-Kyun Ahn, Jong-Won Lim

المصدر: Nanomaterials, Vol 10, Iss 11, p 2175 (2020)

مصطلحات موضوعية: GaN, SiN, HfO2, gate insulator, MIS-HEMT, total ionizing dose effect, Chemistry, QD1-999

وصف الملف: electronic resource

Relation: https://www.mdpi.com/2079-4991/10/11/2175; https://doaj.org/toc/2079-4991

URL الوصول: https://doaj.org/article/18e43b84a212499da1141036540960f9

المؤلفون: Min Park, Hokyun Ahn, Dong Min Kang, Honggu Ji, Jaekyoung Mun, Haecheon Kim, Kyoung Ik Cho

المصدر: 33rd European Microwave Conference Proceedings (IEEE Cat. No.03EX723C) European microwave conference Microwave Conference, 2003. 33rd European. 1:371-374 Vol.1 2003

Relation: 33rd European Microwave Conference Proceedings

المؤلفون: Jae Kyoung Mun, Haecheon Kim, Chung-Hwan Kim, Min-Gun Kim, Jae Jin Lee, Kwang-Eui Pyun

المصدر: Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits Physical and failure analysis of integrated circuits Physical & Failure Analysis of Integrated Circuits, 1997., Proceedings of the 1997 6th International Symposium on. :260-263 1997

Relation: Proceedings of the 1997 6th International Symposium on the Physical and Failure Analysis of Integrated Circuits

المؤلفون: Jong-Lam Lee, Jae Kyoung Mun, Haecheon Kim, Jae Jin Lee, Hyung-Moo Park, Sin-Chong Park

المصدر: Proceedings of 1994 IEEE GaAs IC Symposium GaAs IC symposium Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual. :133-136 1994

Relation: Proceedings of 1994 IEEE GaAs IC Symposium

المؤلفون: Jong-Lam Lee, Jae Kyoung Mun, Haecheon Kim, Jai-Jin Lee, Hyung-Moo Park

المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 43(4):519-526 Apr, 1996

المؤلفون: Jong-Lam Lee, Haecheon Kim, Jae Kyoung Mun, Sung-Jae Maeng

المصدر: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 19(7):250-252 Jul, 1998

المؤلفون: Jong-Lam Lee, Haecheon Kim, Jae Kyoung Mun, Hae-Gwon Lee, Hyung-Moo Park

المصدر: IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 15(9):324-326 Sep, 1994

المؤلفون: Seon-Eui Hong, Eun-Su Nam, Jon-Won Lim, Ho-Kyun Ahn, Haecheon Kim, Jeong-Ki Pack

المصدر: 2005 Asia-Pacific Microwave Conference Proceedings Asia-Pacific Microwave Conference Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings. 2:4 pp. 2005

Relation: 2005 Asia-Pacific Microwave Conference

المؤلفون: Hokyun Ahn, Jae-Won Do, Hyun-Wook Jung, Jong-Won Lim, Haecheon Kim, Sung-Jae Chang

المصدر: Journal of the Korean Physical Society. 76:837-842

مصطلحات موضوعية: 010302 applied physics, Tetramethylammonium hydroxide, Fabrication, Materials science, Scanning electron microscope, business.industry, Annealing (metallurgy), General Physics and Astronomy, Heterojunction, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, chemistry.chemical_compound, chemistry, Transmission electron microscopy, 0103 physical sciences, Optoelectronics, 0210 nano-technology, business, Contact area, Ohmic contact

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::74f8ba7d4944a2ae1f3bea33f99ebbb1
https://doi.org/10.3938/jkps.76.837