يعرض 1 - 10 نتائج من 507 نتيجة بحث عن '"Han, Min-Koo"', وقت الاستعلام: 1.25s تنقيح النتائج
  1. 1
    مؤتمر
    Normally-off AlGaN/GaN MOS-HEMTs by KOH wet etch and rf-sputtered HfO2 gate insulator

    المؤلفون: Ahn, Woojin, Seok, Ogyun, Ha, Min-Woo, Kim, Young-Shil, Han, Min-Koo

    المصدر: 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2013 25th International Symposium on. :311-314 May, 2013

    Relation: 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

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  2. 2
    مؤتمر
    High breakdown voltage AlGaN/GaN MOS-HEMTs-on-Si with atomic-layer-deposited Al2O3 gate insulator

    المؤلفون: Kim, Young-Shil, Ha, Min-Woo, Seok, Ogyun, Ahn, Woo Jin, Han, Min-Koo

    المصدر: 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2013 25th International Symposium on. :207-211 May, 2013

    Relation: 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

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  3. 3
    مؤتمر
    Excimer laser annealed low temperature solution-processed Oxide Thin Film Transistors

    المؤلفون: Lee, Jeong-Soo, Song, Seung-Min, Cho, Seung-Hwan, Song, Moon-Kyu, Kim, Yong-Hoon, Kwon, Jang-Yeon, Han, Min-Koo

    المصدر: 2012 19th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2012 19th International Workshop on. :135-138 Jul, 2012

    Relation: 2012 19th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

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  4. 4
    مؤتمر
    The hysteresis and off-current of amorphous indium-gallium-zinc oxide thin film transistors with various active layer thicknesses under the light illumination

    المؤلفون: Lee, Soo-Yeon, Kuk, Seung-Hee, Song, Moon-Kyu, Han, Min-Koo

    المصدر: 2012 19th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2012 19th International Workshop on. :151-154 Jul, 2012

    Relation: 2012 19th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

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  5. 5
    مؤتمر
    The effects of passivation layer on the electrical stability of flexible In-Ga-Zn-O thin film transistors on plastic substrate

    المؤلفون: Kuk, Seung-Hee, Song, Moon-Kyu, Kwon, Seyeoul, Youn, Sang Cheon, Park, Weon Seo, Yoon, Soo-Young, Han, Min-Koo

    المصدر: 2012 19th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2012 19th International Workshop on. :167-170 Jul, 2012

    Relation: 2012 19th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

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  6. 6
    مؤتمر
    Oxygen vacancy diffusion in amorphous In-Ga-Zn-Oxide Thin-film-transistors with Ti/Cu source/drain

    المؤلفون: Song, Moon-Kyu, Kuk, Seung-Hee, Lee, Young-Wook, Han, Min-Koo

    المصدر: 2012 19th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2012 19th International Workshop on. :17-20 Jul, 2012

    Relation: 2012 19th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

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  7. 7
    مؤتمر
    High breakdown AlGaN/GaN HEMTs employing double metal structure

    المؤلفون: Kim, Young-Shil, Ha, Min-Woo, Seok, O-Gyun, An, Woo-Jin, Han, Min-koo

    المصدر: 2012 24th International Symposium on Power Semiconductor Devices and ICs Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on. :273-277 Jun, 2012

    Relation: 2012 24th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

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  8. 8
    مؤتمر
    3.2 kV AlGaN/GaN MIS-HEMTs employing RF sputtered Ga2O3 films

    المؤلفون: Seok, Ogyun, Ahn, Woojin, Kim, Young-Shil, Han, Min-Koo, Ha, Min-Woo

    المصدر: 2012 24th International Symposium on Power Semiconductor Devices and ICs Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on. :269-272 Jun, 2012

    Relation: 2012 24th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

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  9. 9
    مؤتمر
    High breakdown voltage AlGaN/GaN HEMT by employing selective fluoride plasma treatment

    المؤلفون: Kim, Young-Shil, Lim, Jiyong, Seok, O-Gyun, Han, Min-koo

    المصدر: 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium on. :251-255 May, 2011

    Relation: 2011 23rd International Symposium on Power Semiconductor Devices & IC's (ISPSD)

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  10. 10
    مؤتمر
    Effect of oxygen annealing temperature on AlGaN/GaN HEMTs

    المؤلفون: Seok, Ogyun, Kim, Young-Shil, Lim, Jiyong, Han, Min-Koo

    المصدر: 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium on. :235-238 May, 2011

    Relation: 2011 23rd International Symposium on Power Semiconductor Devices & IC's (ISPSD)

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