يعرض 1 - 10 نتائج من 59 نتيجة بحث عن '"Han-jin Lim"', وقت الاستعلام: 0.82s تنقيح النتائج
  1. 1
    مؤتمر
    Integration processes of (Ba,Sr)TiO/sub 3/ capacitor for 1 Gb and beyond [DRAMs]

    المؤلفون: Byoung Taek Lee, Cha Young Yoo, Han Jin Lim, Chang Seok Kang, Hong Bae Park, Wan Don Kim, Suk Ho Ju, Horii, H., Ki Hoon Lee, Hyun Woo Kim, Sang In Lee, Moon Young Lee

    المصدر: International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) Electron devices - IEDM 1998 Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International. :815-818 1998

    Relation: International Electron Devices Meeting 1998. Technical Digest

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  2. 2
    مؤتمر
    A self-aligned stacked capacitor using novel Pt electroplating method for 1 Gbit DRAMs and beyond

    المؤلفون: Horii, H., Byoung Taek Lee, Han Jin Lim, Suk Ho Joo, Chang Seok Kang, Cha Young Yoo, Hong Bae Park, Wan Don Kim, Sang In Lee, Moon Yong Lee

    المصدر: 1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) VLSI technology VLSI Technology, 1999. Digest of Technical Papers. 1999 Symposium on. :103-104 1999

    Relation: 1999 Symposium on VLSI Technology. Digest of Technical Papers

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  3. 3
    دورية أكاديمية
    Epitaxial integration and properties of SrRuO3 on silicon

    المؤلفون: Zhe Wang, Hari P. Nair, Gabriela C. Correa, Jaewoo Jeong, Kiyoung Lee, Eun Sun Kim, Ariel Seidner H., Chang Seung Lee, Han Jin Lim, David A. Muller, Darrell G. Schlom

    المصدر: APL Materials, Vol 6, Iss 8, Pp 086101-086101-10 (2018)

    مصطلحات موضوعية: Biotechnology, TP248.13-248.65, Physics, QC1-999

    وصف الملف: electronic resource

    Relation: https://doaj.org/toc/2166-532X

    URL الوصول: https://doaj.org/article/521aa86ff1f74f23bfac285a9781b1b0

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  4. 4
    Dielectric properties of sub 20 nm homoepitaxial SrTiO3 thin film grown by molecular beam epitaxy using oxygen plasma

    المؤلفون: Young-Nam Kwon, Na Byunghoon, Jungmin Park, Myoungho Jeong, Han-jin Lim, Euijoon Yoon, Beom-jong Kim

    المصدر: Ferroelectrics. 571:76-84

    مصطلحات موضوعية: 010302 applied physics, Materials science, business.industry, 02 engineering and technology, Dielectric, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Epitaxy, 01 natural sciences, Electronic, Optical and Magnetic Materials, Nb doped, Molecular beam epitaxial growth, 0103 physical sciences, Oxygen plasma, Optoelectronics, Thin film, 0210 nano-technology, business, Molecular beam epitaxy

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::af388a4e54015856108fe7839e538970
    https://doi.org/10.1080/00150193.2020.1853741

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  5. 5
    Toward Advanced High‐ k and Electrode Thin Films for DRAM Capacitors via Atomic Layer Deposition

    المؤلفون: Se Eun Kim, Ju Young Sung, Jae Deock Jeon, Seo Young Jang, Hye Min Lee, Sang Mo Moon, Jun Goo Kang, Han Jin Lim, Hyung‐Suk Jung, Sang Woon Lee

    المصدر: Advanced Materials Technologies. :2200878

    مصطلحات موضوعية: Mechanics of Materials, General Materials Science, Industrial and Manufacturing Engineering

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::7d0ddf6bbd15d760ee2bbe93ba9c81e7
    https://doi.org/10.1002/admt.202200878

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  6. 6
    Improvement of the electrical and interfacial propertie of TiN/ZrO2 by a modulated atomic layer deposition process with controlled O3 dosing

    المؤلفون: Seunghyup Lee, Younsoo Kim, Dokyoung Kim, Hongseon Song, Kijung Yong, Hyung-Suk Jung, Han-jin Lim

    المصدر: Thin Solid Films. 675:153-159

    مصطلحات موضوعية: 010302 applied physics, Materials science, Fabrication, Metals and Alloys, chemistry.chemical_element, 02 engineering and technology, Surfaces and Interfaces, Dielectric, Substrate (electronics), 021001 nanoscience & nanotechnology, 01 natural sciences, Capacitance, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, law.invention, Crystallinity, Capacitor, Atomic layer deposition, chemistry, Chemical engineering, law, 0103 physical sciences, Materials Chemistry, 0210 nano-technology, Tin

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::54df2f4866746178d078486888abdc86
    https://doi.org/10.1016/j.tsf.2019.02.040

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  7. 7
    5.5 A 2.1e− Temporal Noise and −105dB Parasitic Light Sensitivity Backside-Illuminated 2.3µm-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using High-Capacity DRAM Capacitor Technology

    المؤلفون: Im Dongmo, Keun-Yeong Cho, Hyun-Chul Kim, Jingyun Kim, Dae-Hoon Kim, Chong Kwang Chang, Haemin Lim, Doo-Won Kwon, Jung-Chak Ahn, Ho-Kyu Kang, Heesung Shim, Seung Sik Kim, Ju-young Kim, Kim Taehyoung, Hyeongsun Hong, Han-jin Lim, In-Gyu Baek, Kyoung-Min Koh, Kyu-Pil Lee, Jungchan Kyoung, Joo-sung Moon, Jiyoon Kim, Jae-Kyu Lee, Seo Minwoong, Minho Jang, Jiyoun Song, Tae-Hoon Kim, Jinyong Choi

    المصدر: ISSCC

    مصطلحات موضوعية: Light sensitivity, Pixel, Computer science, 020208 electrical & electronic engineering, ComputingMethodologies_IMAGEPROCESSINGANDCOMPUTERVISION, 02 engineering and technology, Photodiode, law.invention, law, Shutter, Distortion, 0202 electrical engineering, electronic engineering, information engineering, Electronic engineering, Image sensor, Sensitivity (electronics)

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::448d99ab1e69f61a9e5e9671344099a0
    https://doi.org/10.1109/isscc19947.2020.9063092

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  8. 8
    5.6 A 1/2.65in 44Mpixel CMOS Image Sensor with 0.7µm Pixels Fabricated in Advanced Full-Depth Deep-Trench Isolation Technology

    المؤلفون: Youngsun Oh, Taehun Lee, Dongsuk Cho, Haeyong Park, Joo Hyoung Kim, Han-jin Lim, Hyeongsun Hong, Soo-jin Hong, Changkyu Lee, Yi-tae Kim, Chongkwang Chang, Doo-Won Kwon, Seungjoo Nah, Jung-Chak Ahn, Jingyun Kim, Ho-Kyu Kang, Kyu-Pil Lee, Sangill Jung, Hyun-Chul Kim, In-sung Joe, Jae-Kyu Lee, Jong-Eun Park

    المصدر: ISSCC

    مصطلحات موضوعية: 010302 applied physics, Pixel, Image quality, Computer science, business.industry, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Photodiode, law.invention, CMOS, law, Optical format, 0103 physical sciences, Computer vision, Artificial intelligence, Image sensor, 0210 nano-technology, business, Dark current, Camera module

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::f551c53edb0eedee8e34a33f48c12cc1
    https://doi.org/10.1109/isscc19947.2020.9062924

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  9. 9
    Opportunity for band alignment manipulation of perovskite oxide stacks by interfacial dipole layer formation

    المؤلفون: Koji Kita, Han-jin Lim, Young-Geun Park, Seungwoo Jang, Atsushi Tamura

    المصدر: Solid-State Electronics. 185:108128

    مصطلحات موضوعية: Materials science, Oxide, 02 engineering and technology, Dielectric, Epitaxy, 01 natural sciences, law.invention, Pulsed laser deposition, chemistry.chemical_compound, law, 0103 physical sciences, Materials Chemistry, Electrical and Electronic Engineering, Perovskite (structure), 010302 applied physics, business.industry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Capacitor, Dipole, chemistry, Optoelectronics, 0210 nano-technology, business, Layer (electronics)

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::9dff44b8b201034ad6f30d759f8ddbe5
    https://doi.org/10.1016/j.sse.2021.108128

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  10. 10
    Annihilation Behavior of Planar Defects on Phosphorus-Doped Silicon at Low Temperatures

    المؤلفون: Im D.-H., Woo Hyun Nam, Jeong Yong Lee, Sang Yun Kim, Lee K.-S., Kwang Wuk Park, Yong In Kim, Myoungho Jeong, Jong Min Yuk, Im K.-V., Han-jin Lim, Sungkyu Kim

    المصدر: Journal of Nanoscience and Nanotechnology. 17:3370-3374

    مصطلحات موضوعية: Materials science, Annihilation, Silicon, business.industry, Biomedical Engineering, chemistry.chemical_element, Bioengineering, General Chemistry, Condensed Matter Physics, Planar, Phosphorus doped, chemistry, Optoelectronics, General Materials Science, business

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::1f9420d99ba331d858f23850d2ec562a
    https://doi.org/10.1166/jnn.2017.14021

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