يعرض 1 - 10 نتائج من 253 نتيجة بحث عن '"Harada, Shinsuke"', وقت الاستعلام: 1.12s تنقيح النتائج
  1. 1
    مؤتمر
    Avalanche Stability Improvement by Boron Implanted GaN JTE Structures with Reduced Trap Density

    المؤلفون: Miura, Yoshinao, Hirai, Hirohisa, Nakajima, Akira, Harada, Shinsuke

    المصدر: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :307-310 Jun, 2024

    Relation: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  2. 2
    مؤتمر
    Investigations of Residual Damage in SiC Trench MOSFETs after Single and Multiple Short-Circuit Stress

    المؤلفون: Takahashi, Mitsuki, Yano, Hiroshi, Iwamuro, Noriyuki, Harada, Shinsuke

    المصدر: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2023 35th International Symposium on. :250-253 May, 2023

    Relation: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  3. 3
    مؤتمر
    Investigation of the Short-circuit Failure Mechanisms in 1.2-kV SiC Trench MOSFETs with Thin N+ Substrates Using Electro-thermal-mechanical Analysis

    المؤلفون: Kashiwa, Keisuke, Yao, Kailun, Yano, Hiroshi, Iwamuro, Noriyuki, Harada, Shinsuke

    المصدر: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2022 IEEE 34th International Symposium on. :113-116 May, 2022

    Relation: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  4. 4
    مؤتمر
    Comparative Study of Performance of SiC SJ-MOSFETs Formed by Multi-epitaxial Growth and Trench-filling Epitaxial Growth

    المؤلفون: Sometani, Mitsuru, Oozono, Kunihide, Ji, Shiyang, Morimoto, Tadao, Kato, Tomohisa, Kojima, Kazutoshi, Harada, Shinsuke

    المصدر: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2022 IEEE 34th International Symposium on. :337-340 May, 2022

    Relation: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  5. 5
    مؤتمر
    Demonstration of the Surge Current Capability of Embedded SBDs in SiC SBD-Integrated Trench MOSFETs with a Thick Cu Block

    المؤلفون: Kitamura, Yudai, Yano, Hiroshi, Iwamuro, Noriyuki, Kato, Fumiki, Tanaka, So, Tawara, Takeshi, Harada, Shinsuke, Sato, Hiroshi

    المصدر: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2022 IEEE 34th International Symposium on. :109-112 May, 2022

    Relation: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  6. 6
    مؤتمر
    Wafer-scale Fabrication of Vertical GaN p-n Diodes with Graded JTE Structures Using Multiple-zone Boron Implantation

    المؤلفون: Miura, Yoshinao, Hirai, Hirohisa, Nakajima, Akira, Harada, Shinsuke

    المصدر: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2022 IEEE 34th International Symposium on. :329-332 May, 2022

    Relation: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  7. 7
    مؤتمر
    Enhanced Short-circuit Capability for 1.2 kV SiC SBD-integrated Trench MOSFETs Using Cu Blocks Sintered on the Source Pad

    المؤلفون: Yao, Kailun, Kato, Fumiki, Tanaka, So, Harada, Shinsuke, Sato, Hiroshi, Yano, Hiroshi, Iwamuro, Noriyuki

    المصدر: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2022 IEEE 34th International Symposium on. :297-300 May, 2022

    Relation: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  8. 8
    مؤتمر
    Realization of Monolithic SiC Power IC Utilizing the Compatible Process for CMOS and Power MOSFET

    المؤلفون: Okamoto, Mitsuo, Yao, Atsushi, Sato, Hiroshi, Harada, Shinsuke

    المصدر: 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) Electron Devices Technology & Manufacturing Conference (EDTM), 2022 6th IEEE. :195-197 Mar, 2022

    Relation: 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)

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  9. 9
    مؤتمر
    A New JTE Technique for Vertical GaN Power Devices by Conductivity Control Using Boron Implantation into p-Type Layer

    المؤلفون: Miura, Yoshinao, Hirai, Hirohisa, Nakajima, Akira, Harada, Shinsuke

    المصدر: 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2021 33rd International Symposium on. :343-346 May, 2021

    Relation: 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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  10. 10
    مؤتمر
    Experimental and Numerical Demonstration of Superior RBSOAs in 1.2 kV SiC Trench and SBD-integrated Trench MOSFETs

    المؤلفون: Todaka, Shunki, Matsui, Kevin, Aiba, Ruito, Yano, Hiroshi, Iwamuro, Noriyuki, Baba, Masakazu, Harada, Shinsuke

    المصدر: 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2021 33rd International Symposium on. :219-222 May, 2021

    Relation: 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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