يعرض 1 - 6 نتائج من 6 نتيجة بحث عن '"Harashima, Masayuki"', وقت الاستعلام: 0.81s تنقيح النتائج
  1. 1
    مؤتمر
    Dynamic characteristics of large current capacity module using 16-kV ultrahigh voltage SiC flip-type n-channel IE-IGBT

    المؤلفون: Mizushima, Tomonori, Takenaka, Kensuke, Fujisawa, Hiroyuki, Kato, Tomohisa, Harada, Shinsuke, Tanaka, Yasunori, Okamoto, Mitsuo, Sometani, Mitsuru, Okamoto, Dai, Kumagai, Naoki, Matsunaga, Shinichiro, Deguchi, Tadayoshi, Arai, Manabu, Hatakeyama, Tetsuo, Makifuchi, Youichi, Araoka, Tsuyoshi, Oose, Naoyuki, Tsutsumi, Takashi, Yoshikawa, Mitsuru, Tatera, Katsumi, Tanaka, Atsushi, Ogata, Syuji, Nakayama, Koji, Hayashi, Toshihiko, Asano, Katsunori, Harashima, Masayuki, Sano, Yukio, Morisaki, Eisuke, Takei, Manabu, Miyajima, Masaaki, Kimura, Hiroshi, Otsuki, Akihiro, Yonezawa, Yoshiyuki, Fukuda, Kenji, Okumura, Hajime, Kimoto, Tsunenobu

    المصدر: 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Power Semiconductor Devices & IC's (ISPSD), 2014 IEEE 26th International Symposium on. :277-280 Jun, 2014

    Relation: 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

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  2. 2
    مؤتمر
    Low Vf and highly reliable 16 kV ultrahigh voltage SiC flip-type n-channel implantation and epitaxial IGBT

    المؤلفون: Yonezawa, Yoshiyuki, Mizushima, Tomonori, Takenaka, Kensuke, Fujisawa, Hiroyuki, Kato, Tomohisa, Harada, Shinsuke, Tanaka, Yasunori, Okamoto, Mitsuo, Sometani, Mitsuru, Okamoto, Dai, Kumagai, Naoki, Matsunaga, Shinichiro, Deguchi, Tadayoshi, Arai, Manabu, Hatakeyama, Tetsuo, Makifuchi, Youichi, Araoka, Tsuyoshi, Oose, Naoyuki, Tsutsumi, Takashi, Yoshikawa, Mitsuru, Tatera, Katsumi, Harashima, Masayuki, Sano, Yukio, Morisaki, Eisuke, Takei, Manabu, Miyajima, Masaaki, Kimura, Hiroshi, Otsuki, Akihiro, Fukuda, Kenji, Okumura, Hajime, Kimoto, Tsunenobu

    المصدر: 2013 IEEE International Electron Devices Meeting Electron Devices Meeting (IEDM), 2013 IEEE International. :6.6.1-6.6.4 Dec, 2013

    Relation: 2013 IEEE International Electron Devices Meeting (IEDM)

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  3. 3
    دورية أكاديمية
    Interpretation of initial stage of 3C-SiC growth on Si(1 0 0) using dimethylsilane

    المؤلفون: Narita, Yuzuru, Harashima, Masayuki, Yasui, Kanji, Akahane, Tadashi, Takata, Masasuke

    المصدر: In Applied Surface Science 2006 252(10):3460-3465

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  4. 4
    دورية أكاديمية
    Initial stage of 3C–SiC growth on Si(0 0 1)–2 × 1 surface using monomethylsilane

    المؤلفون: Narita, Yuzuru, Inubushi, Toshikazu, Harashima, Masayuki, Yasui, Kanji, Akahane, Tadashi

    المصدر: In Applied Surface Science 2003 216(1):575-579

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  5. 5
    دورية أكاديمية
    Situations in Which the Concept of "Personality" is Used: Categorization of References to "Personality.". (English)

    المؤلفون: ARAKAWA, Ayumu, HARASHIMA, Masayuki

    المصدر: Japanese Journal of Personality / Pasonariti Kenkyu; 2010, Vol. 19 Issue 1, p1-14, 14p

    مصطلحات موضوعية: PERSONALITY, BLOGS, PSYCHOLOGY, PRAGMATISM, EMOTIONS

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  6. 6
    دورية أكاديمية
    The characterization of an Si(001)-c(4 × 4) structure formed using monomethylsilane.

    المؤلفون: Harashima, Masayuki, Yasui, Kanji, Akahane, Tadashi

    المصدر: Nanotechnology; Jun2004, Vol. 15 Issue 6, pS406-S409, 4p

    مصطلحات موضوعية: SILICON, NUCLEATION, SCANNING systems, ANNEALING of metals

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