يعرض 1 - 3 نتائج من 3 نتيجة بحث عن '"Heegee Lee"', وقت الاستعلام: 0.80s تنقيح النتائج
  1. 1
    مؤتمر
    The effect of mechanical stress from stopping nitride to the reliability of tunnel oxide and data retention characteristics of NAND FLASH memory

    المؤلفون: Jaechul Om, Eunseok Choi, Sejun Kim, Heegee Lee, Yongwook Kim, Heehyun Chang, Sungji Park, Gihyun Bae

    المصدر: 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. Reliability physics Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International. :257-259 2005

    Relation: 2005 IEEE International Reliability Physics Symposium. Proceedings 43rd Annual

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  2. 2
    Arc-induced gate oxide breakdown in plasma etching process

    المؤلفون: Heegee Lee, Jung Hoon Lee, Jungwoo Song

    المصدر: Microelectronic Manufacturing Yield, Reliability, and Failure Analysis III.

    مصطلحات موضوعية: Arc (geometry), Materials science, Plasma etching, business.industry, Gate oxide, Etching (microfabrication), Electric field, Electronic engineering, Optoelectronics, Time-dependent gate oxide breakdown, Plasma, Dielectric, business

    URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::4172cbcd57aa09f39cc15e55c97f2edc
    https://doi.org/10.1117/12.284697

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  3. 3
    مؤتمر
    The effect of mechanical stress from stopping nitride to the reliability of tunnel oxide and data retention characteristics of NAND FLASH memory.

    المؤلفون: Om, J., Eunseok Choi, Sejun Kim, Heegee Lee, Yongwook Kim, Heenyun Chang, Sungki Park, Gihyun Bae

    المصدر: 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings 43rd Annual; 2005, p257-259, 3p

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