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1
المؤلفون: Michael Szelong
المصدر: Ruhr-Universität Bochum
مصطلحات موضوعية: Niederdimensionales System, Festkörperphysik, ddc:621.3, Elektrischer Transport, Gleichrichter, Heterostruktur-Bauelement
وصف الملف: application/pdf
URL الوصول: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::a48a693b7086eb920f94404d51922e88
https://hss-opus.ub.ruhr-uni-bochum.de/opus4/frontdoor/index/index/docId/5428 -
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المؤلفون: Hübel, Alexander
المساهمون: von Klitzing, Klaus (Prof. Dr.)
مصطلحات موضوعية: Galliumarsenid , Quantenpunkt , Dimension 2 , Heterostruktur , Heterostruktur-Bauelement , Lithographie , Anderson-Modell, Einzelelektronentunneln , Doppelquantenpunkt , elektrischer Transport , Elektronenstrahllithographie , zweidimensionales Elektronensystem, gallium arsenide , double quantum dot , electrical transport , two-dimensional electron system , single-electron tunneling, Galliumarsenid , Quantenpunkt , Dimension 2 , Heterostruktur , Heterostruktur-Bauelement , Lithographie
, Anderson-Modell URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6a93cfe17db773436863c155ec6c6b8e
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3
المؤلفون: Fieger, Michael
المساهمون: Vescan, Andrei
المصدر: Aachen : Publikationsserver der RWTH Aachen University 124 S. : Ill., graph. Darst. (2010). = Aachen, Techn. Hochsch., Diss., 2010
مصطلحات موضوعية: AlInN, Ingenieurwissenschaften, AlGaN, Nitride, HFET, Heterostruktur-Bauelement, ddc:620, HEMT, GaN
URL الوصول: https://explore.openaire.eu/search/publication?articleId=od_______791::64de6a94eb17107effc6299beade5077
https://publications.rwth-aachen.de/record/63289 -
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المؤلفون: Müller, Christian Robert
مصطلحات موضوعية: Heterostruktur-Bauelement, ddc:530, Galliumarsenid, Aluminiumarsenid
وصف الملف: application/pdf
URL الوصول: https://explore.openaire.eu/search/publication?articleId=od_______713::cf22dd999e712ea2954c336341bc9b34
https://opus.bibliothek.uni-wuerzburg.de/frontdoor/index/index/docId/3347 -
5
مصطلحات موضوعية: Zinkselenid, Elektron, Physics, Manganselenide, Oberflächen, Dünne Schichten, Grenzflächen, Heterostruktur-Bauelement, Halbleiterphysik, Quanteninformatik, Selbstorganisation, Theoretische Nachrichtentechnik, Indiumarsenid, Quantenpunkt, Halbleiterdiode, Electrical engineering, Spinpolarisation, Molekularstrahlepitaxie, Heterostruktur, Galliumarsenid
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::b48d92e5bc120f17586b0a3934ce1be5
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المؤلفون: Julius-Maximilians-Universität Würzburg
مصطلحات موضوعية: Zinkselenid, Elektron, Physics, Manganselenide, Oberflächen, Dünne Schichten, Grenzflächen, Heterostruktur-Bauelement, Halbleiterphysik, Quanteninformatik, Selbstorganisation, Theoretische Nachrichtentechnik, Indiumarsenid, Quantenpunkt, Halbleiterdiode, Electrical engineering, Spinpolarisation, Molekularstrahlepitaxie, Heterostruktur, Galliumarsenid
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::ca6665f7060391386eb43527aa1adec1
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7
المؤلفون: Korte, Lars
المساهمون: Fuhs, Walter (Prof. Dr.)
مصطلحات موضوعية: Photoelektronenspektroskopie, Ph, Amorphes Silicum, generation, generation, recombination, lifetime, and trapping -- III-V semiconductor-to-semiconductor contacts, p-n junctions, and -- Electron states at surfaces and interfaces -- Impurity and defect levels, energy states of adsorbed species -- Ballistic transport (see also 75.47.Jn Ballistic magnetoresistance in magnetic properties and materials) -- Electronic transport in mesoscopic systems -- -- Collective excitations (including excitons, polarons, plasmons and other charge-density excitations) (for collective excitations in quantum Hall effects, see 73.43.Lp) -- Quantum wells -- Surface states, band structure, electron density of states -- Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems (for electron states in nanoscale materials, see 73.22.-f) -- III-V semiconductors -- Amorphous semiconductors, glasses -- Physics -- Physik [Photoconduction and photovoltaic effects -- High-frequency effects, plasma effects -- Charge carriers], Physics, Amorphous silicon, Heterostruktur-Bauelement, generation, generation, recombination, lifetime, and trapping, III-V semiconductor-to-semiconductor contacts, p-n junctions, and, Electron states at surfaces and interfaces, Impurity and defect levels, energy states of adsorbed species, Ballistic transport (see also 75.47.Jn Ballistic magnetoresistance in magnetic properties and materials), Electronic transport in mesoscopic systems, Collective excitations (including excitons, polarons, plasmons and other charge-density excitations) (for collective excitations in quantum Hall effects, see 73.43.Lp), Quantum wells, Surface states, band structure, electron density of states, Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems (for electron states in nanoscale materials, see 73.22.-f), Zustandsdichte, Heterojunction, III-V semiconductors, Amorphous semiconductors, glasses, Physik, 2006 [Ultraviolett-Photoelektronenspektroskopie, Silicium, Crystalline silicon, Density of states, Band-Offset, Photoconduction and photovoltaic effects, High-frequency effects, plasma effects, Charge carriers], Photoelectron spectroscopy, ddc:530, Ultraviolett-Photoelektronenspektroskopie, Heterostruktur
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1b220f9980814478534e2722b2344cea
http://archiv.ub.uni-marburg.de/diss/z2006/0518 -
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المؤلفون: Taras Slobodskyy
المصدر: Taras Slobodskyy
مصطلحات موضوعية: Heterostruktur-Bauelement, ddc:530, Semimagnetischer Halbleiter, Magnetoelektronik
وصف الملف: application/pdf
URL الوصول: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::1290765c724dfad2dd79320e82528c2e
https://nbn-resolving.org/urn:nbn:de:bvb:20-opus-21011 -
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المؤلفون: Danylyuk, Serhiy
المساهمون: Lüth, Hans
المصدر: Aachen : Publikationsserver der RWTH Aachen University, Berichte des Kernforschungszentrums Jülich 4165, 99 S. : graph. Darst. (2004). = Aachen, Techn. Hochsch., Diss., 2004
مصطلحات موضوعية: Galliumnitrid, 1/f noise, hot electron effects, Heterostruktur-Bauelement, loop oscillators, III-Nitride heterostructures, Aluminiumnitrid, Wide band gap semiconductors, Rauscheigenschaft, Elektronischer Transport, phase noise, Physik, ddc:530, HEMT
URL الوصول: https://explore.openaire.eu/search/publication?articleId=od_______791::e5e1bed568f48147dd62e4b77aac3dae
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المؤلفون: Javorka, Peter
المساهمون: Lüth, Hans
المصدر: Aachen : Publikationsserver der RWTH Aachen University IV, 122 S. : Ill., graph. Darst. (2004). = Aachen, Techn. Hochsch., Diss., 2004
مصطلحات موضوعية: Passivation, Ingenieurwissenschaften, Galliumnitrid, AlGaN, Al2O3, Heterostruktur-Bauelement, Silicium, Aluminiumnitrid, Substrat
, Si, ddc:620, Saphir, HEMT URL الوصول: https://explore.openaire.eu/search/publication?articleId=od_______791::df03da060afe39ce2ec63e78b1032830
https://publications.rwth-aachen.de/record/61995
