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1دورية أكاديمية
المؤلفون: Jun-Hyeok Lee, Jeong-Min Ju, Gokhan Atmaca, Jeong-Gil Kim, Seung-Hyeon Kang, Yong Soo Lee, Sang-Heung Lee, Jong-Won Lim, Ho-Sang Kwon, Sefer Bora Lisesivdin, Jung-Hee Lee
المصدر: IEEE Journal of the Electron Devices Society, Vol 6, Pp 1179-1186 (2018)
مصطلحات موضوعية: AlGaN/GaN, HEMT, periodically carbon-doped GaN, PCD, breakdown voltage, current collapse, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
وصف الملف: electronic resource
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2دورية أكاديمية
المؤلفون: In-Tae Hwang, Kyu-Won Jang, Hyun-Jung Kim, Sang-Heung Lee, Jong-Won Lim, Jin-Mo Yang, Ho-Sang Kwon, Hyun-Seok Kim
المصدر: Applied Sciences, Vol 9, Iss 17, p 3610 (2019)
مصطلحات موضوعية: GaN, metal-insulator-semiconductor high electron mobility transistor, gate leakage current, two-dimensional electron gas, breakdown voltage, Technology, Engineering (General). Civil engineering (General), TA1-2040, Biology (General), QH301-705.5, Physics, QC1-999, Chemistry, QD1-999
وصف الملف: electronic resource
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3
المؤلفون: Doo-Soo KIM, Il-Tak HAN, Tae-Wan KIM, Ho-Sang KWON, Kyung-Tae KIM
المصدر: IEICE Transactions on Electronics. :184-187
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::f8ff7fee2892f3e92476ea1db08ce073
https://doi.org/10.1587/transele.2022ecs6009 -
4
المؤلفون: Ho-Sang Kwon, Dong-Wook Kim, Jong-Hun Jung
المصدر: The Journal of Korean Institute of Electromagnetic Engineering and Science. 31:1059-1068
مصطلحات موضوعية: Materials science, business.industry, Amplifier, Scalability, Electrical engineering, Power semiconductor device, High-electron-mobility transistor, Large-signal model, business
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::8d7062ca732f3f30fa48496855046b86
https://doi.org/10.5515/kjkiees.2020.31.12.1059 -
5
المؤلفون: Sangmin Lee, Ho-Sang Kwon, Chulsoon Choi, Hyeyoung Jung, Byoung-Chul Jun
المصدر: Journal of The Korean Institute of Defense Technology. 2:001-008
مصطلحات موضوعية: Materials science, Manufacturing process, Automotive engineering, Power (physics)
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::4888e6fefc366daa9c5d5e5d26700e0e
https://doi.org/10.52682/jkidt.2020.2.4.001 -
6
المؤلفون: Sanghoon Kim, Ho-Sang Kwon, Byoung-Chul Jun, Gil-Wong Choi, Jong-Hun Jung, Sang Min Lee, Ho-Yeun Lee, Pyung-Soon Im, Dong-Wook Kim
المصدر: The Journal of Korean Institute of Electromagnetic Engineering and Science. 31:584-587
مصطلحات موضوعية: chemistry.chemical_compound, Nonlinear system, Materials science, chemistry, business.industry, Optoelectronics, Gallium nitride, High-electron-mobility transistor, business
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::044d203e2610e508541997e86a23b6da
https://doi.org/10.5515/kjkiees.2020.31.7.584 -
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المؤلفون: Ho-Sang Kwon, Gil-Wong Choi, Sang-Min Lee, Dong-Wook Kim
المصدر: The Journal of Korean Institute of Electromagnetic Engineering and Science. 31:43-50
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::f2ef411fb4a6bbad6aa84d9ce4bc0b07
https://doi.org/10.5515/kjkiees.2020.31.1.43 -
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المؤلفون: Jung-Hee Lee, Jong-Won Lim, Łukasz Janicki, Jeong-Gil Kim, Seung-Hyeon Kang, Kyung-Wan Kim, Ho-Sang Kwon, Jun-Hyeok Lee, Jeong-Min Ju, Yong Soo Lee, Sang-Heung Lee
المصدر: Solid-State Electronics. 152:24-28
مصطلحات موضوعية: 010302 applied physics, Growth pressure, Materials science, business.industry, Transistor, Heterojunction, Algan gan, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Electronic, Optical and Magnetic Materials, law.invention, Lattice constant, law, Lattice (order), 0103 physical sciences, Materials Chemistry, Atomic composition, Optoelectronics, Electrical and Electronic Engineering, 0210 nano-technology, business, High electron
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9
المؤلفون: Jong-Won Lim, Hyun Jung Kim, Jin-Mo Yang, Sang-Heung Lee, In-Tae Hwang, Hyun-Seok Kim, Ho-Sang Kwon, Kyu-Won Jang
المصدر: Applied Sciences
Volume 9
Issue 17
Applied Sciences, Vol 9, Iss 17, p 3610 (2019)مصطلحات موضوعية: Materials science, two-dimensional electron gas, Transconductance, Gate dielectric, 02 engineering and technology, High-electron-mobility transistor, metal-insulator-semiconductor high electron mobility transistor, lcsh:Technology, 01 natural sciences, GaN, breakdown voltage, lcsh:Chemistry, 0103 physical sciences, gate leakage current, Breakdown voltage, General Materials Science, lcsh:QH301-705.5, Instrumentation, 010302 applied physics, Fluid Flow and Transfer Processes, lcsh:T, business.industry, Process Chemistry and Technology, General Engineering, 021001 nanoscience & nanotechnology, lcsh:QC1-999, Computer Science Applications, Threshold voltage, Semiconductor, lcsh:Biology (General), lcsh:QD1-999, lcsh:TA1-2040, Optoelectronics, lcsh:Engineering (General). Civil engineering (General), 0210 nano-technology, business, Layer (electronics), lcsh:Physics, AND gate
وصف الملف: application/pdf
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10
المؤلفون: Hyun-Wook Jung, Hyung Sup Yoon, Seong-Il Kim, Kyu-Jun Cho, Sung-Jae Chang, Haecheon Kim, Jong-Won Lim, Jae-Won Do, Byoung-Gue Min, Jeong Jin Kim, Ho-Sang Kwon, Hokyun Ahn, Jin-Mo Yang
المصدر: ECS Journal of Solid State Science and Technology. 7:P197-P200
مصطلحات موضوعية: 010302 applied physics, Materials science, business.industry, Mode (statistics), chemistry.chemical_element, Algan gan, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Electronic, Optical and Magnetic Materials, chemistry, 0103 physical sciences, Fluorine, Optoelectronics, 0210 nano-technology, business