المؤلفون: Balden, M., Schlueter, K., Dhard, D., Bauer, P., Nilsson, R., Granberg, F., Nordlund, K., Hobler, G.

المصدر: In Nuclear Materials and Energy December 2023 37

المؤلفون: Wilhelm, R.A., Deuzeman, M.J., Rai, S., Husinsky, W., Szabo, P.S., Biber, H., Stadlmayr, R., Cupak, C., Hundsbichler, J., Lemell, C., Möller, W., Mutzke, A., Hobler, G., Versolato, O.O., Aumayr, F., Hoekstra, R.

المصدر: In Nuclear Inst. and Methods in Physics Research, B November 2023 544

المؤلفون: Hobler, G., Moroz, V.

المصدر: 30th European Solid-State Device Research Conference Solid-State Device Research Conference, 2000. Proceeding of the 30th European. :168-171 2000

Relation: 30th European Solid-State Device Research Conference

المؤلفون: Hobler, G., Murthy, C.S.

المصدر: 2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432) Ion implantation technology Ion Implantation Technology, 2000. Conference on. :209-212 2000

Relation: 2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000

المؤلفون: Gossmann, H.-J., Rafferty, C.S., Hobler, G., Vuong, H.-H., Jacobson, D.C., Frei, M.

المصدر: International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) Electron devices - IEDM 1998 Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International. :725-728 1998

Relation: International Electron Devices Meeting 1998. Technical Digest

المؤلفون: Hobler, G., Vuong, H.-H., Bevk, J., Agarwal, A., Gossmann, H.-J., Jacobson, D.C., Foad, M., Murrell, A., Erokhin, Y.

المصدر: International Electron Devices Meeting. IEDM Technical Digest Electron Devices Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International. :489-492 1997

Relation: International Electron Devices Meeting. IEDM Technical Digest

المؤلفون: Hobler, G., Rafferty, C.S., Senkader, S.

المصدر: SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest Simulation of semiconductor processes and devices Simulation of Semiconductor Processes and Devices, 1997. SISPAD '97., 1997 International Conference on. :73-76 1997

Relation: SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest

المؤلفون: Stippel, H., Halama, S., Hobler, G., Wimmer, K., Selberherr, S.

المصدر: NUPAD IV. Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits, Numerical Modeling of Processes and Devices for Integrated Circuits, 1992. NUPAD IV. Workshop on. :231-236 1992

Relation: Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits,

المؤلفون: Hobler, G., Nordlund, K.

المصدر: In Nuclear Inst. and Methods in Physics Research, B 15 June 2019 449:17-21

المؤلفون: Hobler, G., Maciążek, D., Postawa, Z.

المصدر: In Nuclear Inst. and Methods in Physics Research, B 15 May 2019 447:30-33