المؤلفون: Hraziia, Amara, A., Vladimirescu, A., Anghel, C., Thomas, O.

المصدر: 2014 IEEE Faible Tension Faible Consommation Faible Tension Faible Consommation (FTFC), 2014 IEEE. :1-4 May, 2014

Relation: 2014 IEEE Faible Tension Faible Consommation (FTFC)

المؤلفون: Turkyilmaz, O., Onkaraiah, S., Reyboz, M., Clermidy, F., Hraziia, C.A., Portal, J., Bocquet, M.

المصدر: 2012 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH) Nanoscale Architectures (NANOARCH), 2012 IEEE/ACM International Symposium on. :101-108 Jul, 2012

Relation: 2012 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH)

المؤلفون: Onkaraiah, Santhosh, Reyboz, Marina, Clermidy, Fabien, Portal, Jean-Michel, Bocquet, Marc, Muller, Chritophe, Hraziia, Anghel, Costin, Amara, Amara

المصدر: 10th IEEE International NEWCAS Conference New Circuits and Systems Conference (NEWCAS), 2012 IEEE 10th International. :417-420 Jun, 2012

Relation: 2012 IEEE 10th International New Circuits and Systems Conference (NEWCAS)

المؤلفون: Anghel, C., Hraziia, Gupta, A., Amara, A., Vladimirescu, A.

المصدر: IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 58(6):1649-1654 Jun, 2011

المؤلفون: Turkyilmaz, Ogun, Onkaraiah, Santhosh, Reyboz, Marina, Clermidy, Fabien, Hraziia, Anghel, Costin, Portal, Jean-Michel, Bocquet, Marc

المصدر: In Journal of Parallel and Distributed Computing June 2014 74(6):2441-2451

المؤلفون: Hraziia, Makosiej, Adam, Palma, Giorgio, Portal, Jean-Michel, Bocquet, Marc, Thomas, Olivier, Clermidy, Fabien, Reyboz, Marina, Onkaraiah, Santhosh, Muller, Christophe, Deleruyelle, Damien, Vladimirescu, Andrei, Amara, Amara, Anghel, Costin

المصدر: In Solid State Electronics December 2013 90:99-106

المؤلفون: Hraziia, Vladimirescu, Andrei, Amara, Amara, Anghel, Costin

المصدر: In Solid State Electronics April 2012 70:67-72

المؤلفون: Andrei Vladimirescu, Hraziia, Amara Amara, Costin Anghel

المصدر: Solid-State Electronics

مصطلحات موضوعية: 010302 applied physics, Materials science, Silicon, Field (physics), Ambipolar diffusion, business.industry, Electrical engineering, chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Gate voltage, 01 natural sciences, Electronic, Optical and Magnetic Materials, chemistry, 0103 physical sciences, Materials Chemistry, Optoelectronics, Double gate, Field-effect transistor, Electrical and Electronic Engineering, Current (fluid), 0210 nano-technology, business, Scaling

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ef6b890ba8747530ff119aa7c836630a
https://doi.org/10.1016/j.sse.2011.11.009

المؤلفون: Costin Anghel, Hraziia, Amita Gupta, Andrei Vladimirescu, Amara Amara

المصدر: IEEE Transactions on Electron Devices. 58:1649-1654

مصطلحات موضوعية: Materials science, Ambipolar diffusion, business.industry, Transistor, Electrical engineering, Low-k dielectric, Ion current, Electronic, Optical and Magnetic Materials, law.invention, Tunnel effect, CMOS, law, Logic gate, Optoelectronics, Field-effect transistor, Electrical and Electronic Engineering, business

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::16a2ac63cd60e33bbf13f17387231857
https://doi.org/10.1109/ted.2011.2128320

المؤلفون: Ogun Turkyilmaz, Santhosh Onkaraiah, Marina Reyboz, Fabien Clermidy, Hraziia, Marc Bocquet, Jean-Michel Portal, Costin Anghel

المساهمون: Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Institut Supérieur d'Electronique de Paris (ISEP), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU)

المصدر: Journal of Parallel and Distributed Computing
Journal of Parallel and Distributed Computing, 2014, 74, pp.2441-2451. ⟨10.1016/j.jpdc.2013.08.003⟩
Journal of Parallel and Distributed Computing, Elsevier, 2014, 74, pp.2441-2451. ⟨10.1016/j.jpdc.2013.08.003⟩
NANOARCH

مصطلحات موضوعية: Engineering, Power gating, Computer Networks and Communications, Computer science, Power-gating, Context (language use), 02 engineering and technology, Theoretical Computer Science, Artificial Intelligence, Resistive RAM, 0202 electrical engineering, electronic engineering, information engineering, OxRRAM, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Field-programmable gate array, Normally-off instantly-on, FPGA, Flexibility (engineering), business.industry, 021001 nanoscience & nanotechnology, Non-volatile, 020202 computer hardware & architecture, Resistive random-access memory, Power (physics), Non-volatile memory, nvSRAM, Hardware and Architecture, Embedded system, State (computer science), 0210 nano-technology, business, Computer hardware, Software, Energy (signal processing)

URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::528d238762245b188f122f3f39d1c7b1
https://hal.science/hal-01743243