يعرض 1 - 10 نتائج من 64 نتيجة بحث عن '"Hu, Qianlan"', وقت الاستعلام: 0.88s تنقيح النتائج
  1. 1
    مؤتمر
    First Demonstration of Sequential Integration for Stacked Gate-All-Around a-IGZO Nanosheet Transistors with Record Id = 2.05 mA/µm, gm = 1.13 mS/µm and Ultralow SS = 66 mV/dec

    المؤلفون: Li, Qijun, Zhao, Wenjie, Hu, Qianlan, Gu, Chengru, Zhu, Shenwu, Liu, Honggang, Huang, Ru, Wu, Yanqing

    المصدر: 2023 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2023 International. :1-4 Dec, 2023

    Relation: 2023 International Electron Devices Meeting (IEDM)

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  2. 2
    مؤتمر
    First Demonstration of Top-Gate Indium-Tin-Oxide RF Transistors with Record High Cut-off Frequency of 48 GHz, Id of 2.32 mA/μm and gm of 900 μS/μm on SiC Substrate with Superior Reliability at 85 °C

    المؤلفون: Hu, Qianlan, Gu, Chengru, Liu, Shiyuan, Zeng, Min, Zhu, Shenwu, Kang, Jiyang, Liu, Ranhui, Zhao, Wenjie, Tong, Anyu, Li, Qijun, Fu, Tianyue, Huang, Ru, Wu, Yanqing

    المصدر: 2023 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2023 International. :1-4 Dec, 2023

    Relation: 2023 International Electron Devices Meeting (IEDM)

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  3. 3
    مؤتمر
    First Demonstration of Annealing-Free Top Gate La:HZO-IGZO FeFET with Record Memory Window and Endurance

    المؤلفون: Zeng, Min, Hu, Qianlan, Li, Qijun, Liu, Honggang, Yan, Shiwei, Gu, Chengru, Zhao, Wenjie, Huang, Ru, Wu, Yanqing

    المصدر: 2023 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2023 International. :1-4 Dec, 2023

    Relation: 2023 International Electron Devices Meeting (IEDM)

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  4. 4
    مؤتمر
    Optimized IGZO FETs for Capacitorless DRAM with Retention of 10 ks at RT and 7 ks at 85 °C at Zero Vhold with Sub-10 ns Speed and 3-bit Operation

    المؤلفون: Hu, Qianlan, Li, Qijun, Zhu, Shenwu, Gu, Chengru, Liu, Shiyuan, Huang, Ru, Wu, Yanqing

    المصدر: 2022 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2022 International. :26.6.1-26.6.4 Dec, 2022

    Relation: 2022 IEEE International Electron Devices Meeting (IEDM)

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  5. 5
    مؤتمر
    BEOL-Compatible High-Performance a-IGZO Transistors with Record high Ids,max = 1207 μA/μm and on-off ratio exceeding 1011 at Vds = 1V

    المؤلفون: Li, Qijun, Gu, Chengru, Zhu, Shenwu, Hu, Qianlan, Zhao, Wenjie, Li, Xuefei, Huang, Ru, Wu, Yanqing

    المصدر: 2022 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2022 International. :2.7.1-2.7.4 Dec, 2022

    Relation: 2022 IEEE International Electron Devices Meeting (IEDM)

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  6. 6
    دورية أكاديمية
    Scaling aligned carbon nanotube transistors to a sub-10 nm node

    المؤلفون: Lin, YanxiaAff1, Aff2, Cao, Yu, Ding, Sujuan, Zhang, Panpan, Xu, Lin, Liu, Chenchen, Hu, Qianlan, Jin, Chuanhong, Peng, Lian-MaoAff1, Aff2, Aff5, IDs41928023009833_cor9, Zhang, ZhiyongAff1, Aff2, Aff5, IDs41928023009833_cor10

    المصدر: Nature Electronics. 6(7):506-515

    Find this article in full text from Springer Verlag.
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  7. 7
    مؤتمر
    Light-stimulated artificial synapse based on Schottky barrier modulated CVD Mos2 transistors

    المؤلفون: Hu, Qianlan, Wu, Yanqing

    المصدر: 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) Solid-State & Integrated Circuit Technology (ICSICT, 2020 IEEE 15th International Conference on. :1-3 Nov, 2020

    Relation: 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)

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  8. 8
    مؤتمر
    High performance optoelectronics based on CVD Mos2

    المؤلفون: Hu, Qianlan, Zhang, Zhenfeng, Wu, Yanqing

    المصدر: 2019 IEEE 13th International Conference on ASIC (ASICON) ASIC (ASICON), 2019 IEEE 13th International Conference on. :1-3 Oct, 2019

    Relation: 2019 IEEE 13th International Conference on ASIC (ASICON)

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  9. 9
    مؤتمر
    High-performance two-dimensional transistors and circuits

    المؤلفون: Tian, Mengchuan, Xiong, Xiong, Huang, Mingqiang, Li, Tiaoyang, Li, Shengman, Hu, Qianlan, Li, Xuefei, Wu, Yanqing

    المصدر: 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) Solid-State and Integrated Circuit Technology (ICSICT), 2018 14th IEEE International Conference on. :1-4 Oct, 2018

    Relation: 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

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  10. 10
    مؤتمر
    AlGaN/GaN E-mode MOS-HEMT Using Atomic-Layer-Deposited HfLaOx as Gate Dielectric

    المؤلفون: Li, Sichao, Hu, Qianlan, Wang, Xin, Wang, Mengfei, Wu, Yanqing

    المصدر: 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), 2018 1st Workshop on. :153-155 May, 2018

    Relation: 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

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