يعرض 1 - 3 نتائج من 3 نتيجة بحث عن '"Huang, Chiatze"', وقت الاستعلام: 0.85s تنقيح النتائج
  1. 1
    مؤتمر
    A Novel Double-Density Hemi-Cylindrical (HC) Structure to Produce More than Double Memory Density Enhancement for 3D NAND Flash

    المؤلفون: Lue, Hang-Ting, Yeh, Teng-Hao, Du, Pei-Ying, Lo, Roger, Chen, Wei-Chen, Hsu, Tzu-Hsuan, Huang, Chiatze, Lee, Guan-Ru, Chen, Chih-Ping, Jiang, Yu-Wei, Hung, Min-Feng, Su, Yan-Ru, Liang, Li-Yang, Hu, Chih-Wei, Chiu, Chia-Jung, Wang, Keh-Chung, Lu, Chih-Yuan

    المصدر: 2019 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2019 IEEE International. :28.2.1-28.2.4 Dec, 2019

    Relation: 2019 IEEE International Electron Devices Meeting (IEDM)

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  2. 2
    مؤتمر
    A 128Gb (MLC)/192Gb (TLC) single-gate vertical channel (SGVC) architecture 3D NAND using only 16 layers with robust read disturb, long-retention and excellent scaling capability

    المؤلفون: Lue, Hang-Ting, Du, Pei-Ying, Chen, Wei-Chen, Lee, Yung-Chun, Hsu, Tzu-Hsuan, Yeh, Teng-Hao, Chang, Kuo-Pin, Hsieh, Chih-Chang, Huang, Chiatze, Lee, Guan-Ru, Chen, Chih-Ping, Chen, Chieh-Fang, Chiu, Chia-Jung, Chen, Y. J., Lu, W. P., Yang, Tahone, Chen, Kuang-Chao, Hung, Chun-Hsiung, Wang, Keh-Chung, Lu, Chih-Yuan

    المصدر: 2017 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2017 IEEE International. :19.1.1-19.1.4 Dec, 2017

    Relation: 2017 IEEE International Electron Devices Meeting (IEDM)

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  3. 3
    مؤتمر
    A novel double-density, single-gate vertical channel (SGVC) 3D NAND Flash that is tolerant to deep vertical etching CD variation and possesses robust read-disturb immunity

    المؤلفون: Lue, Hang-Ting, Hsu, Tzu-Hsuan, Wu, Chen-Jun, Chen, Wei-Chen, Yeh, Teng-Hao, Chang, Kuo-Pin, Hsieh, Chih-Chang, Du, Pei-Ying, Hsiao, Yi-Hsuan, Jiang, Yu-Wei, Lee, Guan-Ru, Lo, Roger, Su, Yan-Ru, Huang, Chiatze, Lai, Sheng-Chih, Liang, Li-Yang, Chen, Chieh-Fang, Hung, Min-Feng, Hu, Chih-Wei, Chiu, Chia-Jung, Lu, Chih-Yuan

    المصدر: 2015 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2015 IEEE International. :3.2.1-3.2.4 Dec, 2015

    Relation: 2015 IEEE International Electron Devices Meeting (IEDM)

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